AWT6272R TM HELP Cellular/WCDMA 3.4 V/29 dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES * InGaP HBT Technology * High Efficiency: 44 % @ POUT = +29 dBm 20 % @ POUT = +16 dBm AWT6272R 15 % @ POUT = +7 dBm * Low Quiescent Current: 16 mA * Low Leakage Current in Shutdown Mode: <1 A * VREF = +2.85 V (+2.75 V min over temp) * Optimized for a 50 System * Low Profile Miniature Surface Mount Package Option: 1.1 mm Max * RoHS Compliant Package, 250 oC MSL-3 * HSDPA Compliant (no backoff) M20 Package 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module APPLICATIONS * Dual Band WCDMA Wireless Handsets * Dual Mode 3GPP Wireless Handsets PRODUCT DESCRIPTION The AWT6272R meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm(R) 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The selfcontained 4 mm x 4 mm x 1.1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 system. GND at slug (pad) VREF 10 GND 9 GND GND 3 8 RFOUT RFIN 4 7 GND VCC 5 6 VCC 1 VMODE 2 Bias Control Figure 1: Block Diagram 05/2006 AWT6272R GND VREF 1 10 GND VMODE 2 9 GND GND 3 8 RFOUT RFIN 4 7 GND VCC 5 6 VCC GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VREF Reference Voltage 2 VMODE Mode Control 3 GND Ground 4 RFIN RF Input 5 V CC Supply Voltage 6 V CC Supply Voltage 7 GND Ground 8 RFOUT RF Output 9 GND Ground 10 GND Ground PRELIMINARY DATA SHEET - Rev 1.5 05/2006 AWT6272R ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC) 0 +5 V Mode Control Voltage (VMODE) 0 +3.5 V Reference Voltage (VREF) 0 +3.5 V RF Input Power (PIN) - +10 dB m -40 +150 C Storage Temperature (TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT Operating Frequency (f) 824 - 849 MHz Supply Voltage (VCC) +3.2 - +3.4 +1.5 +4.2 - V POUT < +29 dBm POUT < 7 dBm Reference Voltage (VREF) +2.75 0 +2.85 - +2.95 +0.5 V PA "on" PA "shut down" Mode Control Voltage (VMODE) +2.5 0 +2.8 - +3.1 +0.5 V Low Bias Mode High Bias Mode +29.0 +28.0 +27.0 +26.5 - dB m RF Output Power (POUT) 3GPP HSDPA Case A HSDPA Case B HSDPA Case C +28.5 +27.5 +26.5 +26.0 Case Temperature (TC) -20 (1) (1) (1) (1) - +110 (2) COMMENTS 1/15 < c/d < 12/15 13/15 < c/d < 15/8 15/7 < c/d < 15/0 C The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB. (2) For operation at 110 oC (TC), POUT is derated by 1.0 dB. PRELIMINARY DATA SHEET - Rev 1.5 05/2006 3 AWT6272R Table 4: Electrical Specifications (TC = +25 C, VCC = +3.4 V, VREF = +2.85 V, 50 system) PARAMETER MIN TYP MAX Gain 24.5 14 13 26.5 16 15 29 18 17 dB - -40 -45 -45 -38 -38 -38 dB c - -56 -56 -58 -48 -48 -48 dB c 41 17 12 44 20 14.5 - % Quiescent Current (Icq) - 16 22 mA VMODE = +2.85 V, VCC = 3.4 V Reference Current - 4 5 mA through VREF pin Mode Control Current - 0.6 1 mA through VMODE pin, VMODE = +2.85 V Leakage Current - <1 5 A VCC = +4.2 V, VREF = 0 V, VMODE = 0 V - -134 -133 - -142 -140 Harmonics 2fo 3fo, 4fo - -45 -50 -30 -30 dB c Input Impedance - - 2:1 VSWR ACLR1 at 5 MHz offset (1) ACLR2 at 10 MHz offset Power-Added Efficiency (1) Noise in Receive Band Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure UNIT POUT = +29 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.85 V POUT = +7 dBm, VCC = 1.5 V, VMODE = +2.85 V POUT = +29 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.85 V POUT = +7 dBm, VCC = 1.5 V, VMODE = +2.85 V POUT = +29 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.85 V POUT = +7 dBm, VCC = 1.5 V, VMODE = +2.85 V POUT = +29 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.85 V POUT = +7 dBm, VCC = 1.5 V, VMODE = +2.85 V 869 MHz to 894 MHz POUT = +28.5 dBm, VMODE = 0 V dBm/Hz 869 MHz to 894 MHz POUT = +16 dBm, VMODE = +2.85 V - - -70 dB c POUT < +29 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions 10:1 - - VSWR Applies over full operating range Notes: (1) ACLR and Efficiency measured at 836.5 MHz. 4 COMMENTS PRELIMINARY DATA SHEET - Rev 1.5 05/2006 AWT6272R APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to both the VREF and VMODE voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to the VMODE voltage. The Bias Control table lists the recommended modes of operation for various applications. Three operating modes are recommended to optimize current consumption. High Bias/High VCC operating mode is for P OUT levels > 16 dBm. At ~16dBm - 7 dBm, the PA should be "Mode Switched" to Low Bias Mode. For POUT levels < ~7 dBm, the VCC can be switched to 1.5 V (Low Bias Mode is also used for this POUT range). Table 5: Bias Control APPLICATION POUT LE V E LS BIAS MODE CDMA - low power <+7 dBm Low +2.85 V +2.85 V +1.5 CDMA - med power 7 < POUT < +16 dBm Low +2.85 V +2.85 V +3.4 CDMA - high power >+16 dBm High +2.85 V 0V +3.4 - Shutdown 0V 0V - Shutdown V R EF VMODE V CC VREF C2 0.01 F VMODE RFIN VCC1 VREF GND VMODE GND GND RFOUT RFIN GND VCC1 VCC2 GND at Slug RFOUT VCC2 C4 0.01 F C6 1 F C7 2.2 F GND at Slug Figure 3: Application Schematic PRELIMINARY DATA SHEET - Rev 1.5 05/2006 5 AWT6272R PACKAGE OUTLINE Figure 4: M20 Package Outline - 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module 72R 72R Figure 5: Branding Specification 6 PRELIMINARY DATA SHEET - Rev 1.5 05/2006 AWT6272R COMPONENT PACKAGING Figure 6: Tape & Reel Packaging Table 6: Tape & Reel Dimensions PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA 4 mm x 4 mm x 1.1 mm 12 mm 8 mm 2500 13" PRELIMINARY DATA SHEET - Rev 1.5 05/2006 7 AWT6272R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE AWT6272RM20P8 -20 oC to +110 oC PACKAGE DESCRIPTION COMPONENT PACKAGING RoHS Compliant 10 Pin 4 mm x 4 mm x 1.1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 8 PRELIMINARY DATA SHEET - Rev 1.5 05/2006