05/2006
AWT6272R
HELPTM Cellular/WCDMA 3.4 V/29 dBm
Linear Power Amplifier Module
PRELIMINARY DA T A SHEET - Rev 1.5
M20 Package
10 Pin 4 mm x 4 mm x 1.1 mm
Surface Mount Module
Figure 1: Block Diagram
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Select able bias
modes that optimize efficiency for different output power
levels, and a shutdown mode with low leakage current,
increase handset talk and standby time. The self-
contained 4 mm x 4 mm x 1.1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50 Ω
system.
FEATURES
•InGaP HBT Technology
•High Efficiency:
44 % @ POUT = +29 dBm
20 % @ POUT = +16 dBm
15 % @ POUT = +7 dBm
•Low Quiescent Current: 16 mA
•Low Leakage Current in Shutdown Mode: <1 µA
•VREF = +2.85 V (+2.75 V min over temp)
•Optimized for a 50 Ω System
•Low Profile Miniature Surface Mount Package
Option: 1.1 mm Max
•RoHS Compliant Package, 250 oC MSL-3
•HSDPA Compliant (no backoff)
APPLICATIONS
•Dual Band WCDMA Wireless Handsets
•Dual Mode 3GPP Wireless Handsets
PRODUCT DESCRIPTION
The AWT6272R meets the increasing demands for
higher output power in UMTS handsets. The PA module
is optimized for VREF = +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
Bias Control
V
CC
V
REF
RF
IN
RF
OUT
GND
V
MODE
1
7
5
8
10
6
GND at slug (pad)
3
9
4
2
GND
V
CC
GND
GND
AWT6272R
2PRELIMINARY DATA SHEET - Rev 1.5
05/2006
AWT6272R
Figure 2: Pinout (X-ray T op View)
T able 1: Pin Description
V
CC
RF
OUT
V
REF
RF
IN
V
MODE
GND1
GND
10
2
3
4
5 6
9
8
7
V
CC
GND
GND
GND
GND
NIP EMAN NOITPIRCSED
1V
FER
egatloVecnerefeR
2V
EDOM
lortnoCedoM
3DNGdnuorG
4FR
NI
tupnIFR
5V
CC
egatloVylppuS
6V
CC
egatloVylppuS
7DNGdnuorG
8FR
TUO
tuptuOFR
9DNGdnuorG
01DNGdnuorG
PRELIMINARY DATA SHEET - Rev 1.5
05/2006
A WT6272R
3
ELECTRICAL CHARACTERISTICS
T able 2: Absolute Minimum and Maximum Ratings
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
T able 3: Operating Ranges
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
RETEMARAP NIM XAM TINU
V(egatloVylppuS
CC
)05+V
V(egatloVlortnoCedoM
EDOM
)05.3+V
V(egatloVecnerefeR
FER
)05.3+V
P(rewoPtupnIFR
NI
)-01+mBd
T(erutarepmeTegarotS
GTS
)04-051+C°
Notes:
(1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
(2) For operation at 110 oC (TC), POUT is derated by 1.0 dB.
RETEMARAP NIM PYT XAM TINU STNEMMOC
)f(ycneuqerFgnitarepO428-948 zHM
V(egatloVylppuS
CC
)2.3+-4.3+ 5.1+ 2.4+-VP
TUO
< mBd92+
P
TUO
< mBd7
V(egatloVecnerefeR
FER
)57.2+ 058.2+ -59.2+ 5.0+ V"no"AP "nwodtuhs"AP
V(egatloVlortnoCedoM
EDOM
)
5.2+08.2+-1.3+ 5.0+ VedoMsaiBwoL edoMsaiBhgiH
P(rewoPtuptuOFR
TUO
)
PPG3 AesaCAPDSH BesaCAPDSH CesaCAPDSH
5.82+
)1(
5.72+
)1(
5.62+
)1(
0.62+
)1(
0.92+ 0.82+ 0.72+ 5.62+
-
-
-
-
mBd 51/1<β
c
/β
d
< 51/21
51/31<β
c
/β
d
< 8/51
7/51<β
c
/β
d
< 0/51
T(erutarepmeTesaC
C
)02--011+
)2(
C°
4PRELIMINARY DATA SHEET - Rev 1.5
05/2006
AWT6272R
T able 4: Electrical Specifications
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 ΩΩ
ΩΩ
Ω system)
Notes:
(1) ACLR and Efficiency measured at 836.5 MHz.
RETEMARAP NIM PYT XAM TINU STNEMMOC
niaG 5.42 4131
5.62 6151
928171 Bd
P
TUO
V,mBd92+=
EDOM
V0=
P
TUO
V,mBd61+=
EDOM
V58.2+=
P
TUO
V,mBd7+=
CC
,V5.1=
V
EDOM
V58.2+=
tesffozHM5ta1RLCA
)1(
-
-
-
04- 54- 54-
83- 83- 83- cBd P
TUO
V,mBd92+=
EDOM
V0=
P
TUO
V,mBd61+=
EDOM
V58.2+=
P
TUO
V,mBd7+=
CC
,V5.1=
V
EDOM
V58.2+=
tesffozHM01ta2RLCA
-
-
-
65- 65- 85-
84- 84- 84- cBd P
TUO
V,mBd92+=
EDOM
V0=
P
TUO
V,mBd61+=
EDOM
V58.2+=
P
TUO
V,mBd7+=
CC
,V5.1=
V
EDOM
V58.2+=
ycneiciffEdeddA-rewoP
)1(
147121
4402 5.41
-
-
-%P
TUO
V,mBd92+=
EDOM
V0=
P
TUO
V,mBd61+=
EDOM
V58.2+=
P
TUO
V,mBd7+=
CC
,V5.1=
V
EDOM
V58.2+=
)qcI(tnerruCtnecseiuQ -6122AmV
EDOM
V,V58.2+=
CC
V4.3=
tnerruCecnerefeR-45AmVhguorht
FER
nip
tnerruClortnoCedoM-6.01AmVhguorht
EDOM
V,nip
EDOM
V58.2+=
tnerruCegakaeL-1<5 AµV
CC
V,V2.4+=
FER
,V0=
V
EDOM
V0=
dnaBevieceRniesioN -
-
431-
241-
331-
041- zH/mBd
zHM498otzHM968
P
TUO
V,mBd5.82+=
EDOM
V0=
zHM498otzHM968
P
TUO
V,mBd61+=
EDOM
V58.2+=
scinomraH of2 of4,of3 -
-54- 05- 03- 03- cBd
ecnadepmItupnI--1:2RWSV
leveLtuptuOsuoirupS )stuptuosuoirupslla( --07-cBd
P
TUO
< mBd92+ 1:5<RWSVdaoldnab-nI 1:01<RWSVdaoldnab-fo-tuO gnitarepollarevoseilppA snoitidnoc
onhtiwssertshctamsi
mdaoL eruliafronoitadargedtnenamrep 1:01-- RWSVegnargnitarepollufrevoseilppA
PRELIMINARY DATA SHEET - Rev 1.5
05/2006
A WT6272R
5
APPLICA TION INFORMA TION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
T able 5: Bias Control
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
Three operating modes are recommended to
optimize current consumption. High Bias/High VCC
operating mode is for POUT levels > 16 dBm. At
~16dBm - 7 dBm, the PA should be “Mode Switched”
to Low Bias Mode. For POUT levels < ~7 dBm, the VCC
can be switched to 1.5 V (Low Bias Mode is also
used for this POUT range).
NOITACILPPA
P
TUO
SLEVEL
SAIB
EDOM V
FER
V
EDOM
V
CC
rewopwol-AMDC<mBd7+woLV58.2+V58.2+5.1+
rewopdem-AMDC7<
P
TUO
< mBd61+woLV58.2+V58.2+4.3+
rewophgih-AMDCmBd61+>hgiHV58.2+V04.3+
nwodtuhS-nwodtuhSV0V0-
C2
0.01 µF
C6
1 µFC7
2.2 µF
C4
0.01 µF
GND
at Slug
V
CC2
V
CC1
V
REF
V
MODE
RF
IN
RF
OUT
V
CC2
V
CC1
V
REF
V
MODE
RF
IN
RF
OUT
GND
GND
GND
GND
GND
at Slug
Figure 3: Application Schematic
6PRELIMINARY DATA SHEET - Rev 1.5
05/2006
AWT6272R
72R
72R
P ACKAGE OUTLINE
Figure 4: M20 Package Outline - 10 Pin 4 mm x 4 mm x 1.1 mm Surface Mount Module
Figure 5: Branding Specification
PRELIMINARY DATA SHEET - Rev 1.5
05/2006
A WT6272R
7
COMPONENT P ACKAGING
Figure 6: T ape & Reel Packaging
T able 6: T ape & Reel Dimensions
EPYTEGAKCAP HTDIWEPAT HCTIPTEKCOP YTICAPACLEER AIDLEERXAM
mm1.1xmm4xmm4mm21mm80052"31
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
IMPORTANT NOTICE
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: Mktg@anadigics.com
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
PRELIMINARY DATA SHEET - Rev 1.5
05/2006
8
AWT6272R
ORDERING INFORMA TION
REDRO REBMUN ERUTAREPMET EGNAR EGAKCAP NOITPIRCSED GNIGAKCAPTNENOPMOC
8P02MR2726TWA02-
o
011+otC
o
CniP01tnailpmoCSHoR mm1.1xmm4xmm4 eludoMtnuoMecafruS leeRrepseceip0052,leeRdnaepaT
