AMMP-6545 18 to 40 GHz GaAs MMIC Sub-Harmonic Mixer in SMT Package Data Sheet Features Description Avago's AMMP-6545 is an easy-to-use broadband sub-harmonic mixer, with the LO injected at half the frequency of that required by a conventional mixer. MMIC includes an 180 balanced diode based mixer. The MMIC is fabricated using PHEMT technology. The surface mount package allows elimination of "chip & wire" assembly for lower cost. This MMIC is a cost effective alternative to multi-chip solution that have higher loss and complex assembly. RF Frequency : 18-40 GHz LO Frequency : 9-20 GHz IF Frequency : DC-3.5 GHz 5x5 mm Surface Mount Package Suitable for Up and Down Conversion Diode Mixer Performance Typical 18-30 GHz Applications * * * * Microwave radio systems Satellite VSAT, DBS up/down link LMDS & Pt-Pt mmW long haul Broadband wireless access (including 802.16 and 802.20 WiMax) * WLL and MMDS loops Package Diagram LO * * * * * * NC NC IF 1 2 3 8 Conversion Loss IIP3 2LO-R Leakage 2LO-I Leakage 5 NC NC NC : : : : 13 dB +12 dBm -40 dBm -55 dBm Typical 30-40 GHz Conversion Loss IIP3 2LO-R Leakage 2LO-I Leakage NC NC IF 1 2 3 RF LO 6 11 dB +11 dBm -45 dBm -60 dBm Functional Block Diagram 4 7 : : : : RoHS-Exemption Please refer to hazardous substances table on page 5. x2 8 4 7 6 5 NC NC NC RF PIN 1 2 3 4 5 6 7 8 FUNCTION NC NC IF RF NC NC NC LO TOP VIEW PACKAGE BASE: GND Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) : 30V ESD Human Body Model (Class 0) :100V Refer to Avago Technologies Application Note A004R: Electrostatic Discharge, Damage and Control. Note: MSL Rating - Level 2A Electrical Specifications 1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25C. 2. Pre-assembly into package performance verified 100% on-wafer per AMMC-6522 published specifications. 3. This final package part performance is verified by a functional test correlated to actual performance at one or more frequencies. 4. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (opt) matching. 5. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies. Table 1. RF Electrical Characteristics TA=25C, Zo=50 , LO=+15dBm, IF=2GHz Parameter RF=18-30GHz, LO=9-15GHz RF=30-40GHz, LO=15-20GHz Min Min Conversion Loss, CL [1] Input Third Order Intercept, IIP3 [1] Typ Max 11 12 Typ Max Unit 13 dB 10.5 11 12 dB 9 11 12 dB Comment RF: 18-24GHz Input Third Order Intercept, IIP3 [1] RF: 24-30GHz 2LO-R Leakage, 2LO-R -45 -35 -40 dBm 2LO-I Leakage, 2LO-I -60 -50 -55 dBm L-R Leakage, L-R -30 -35 dB L-I Leakage, L-I -35 -30 dB Note: 1.Production RF tested at 21, 23 and 26 GHz in upconverter configuration All tested parameters are guaranteed with the following measurement accuracy: RF=18-24 GHz: 0.8 dBm for RF-leakage, 2.5 dBm for IF-leakage, 1.2dB for Conversion Loss, 0.5 dBm for IIP3 RF=24-30 GHz: 0.8 dBm for RF-leakage, 4.0 dBm for IF-leakage, 0.6 dB for Conversion Loss, 0.5 dBm for IIP3 Table 2. Recommended Operating Range 1. Ambient operational temperature TA = 25C unless otherwise noted. 2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34C) as measured using infrared microscopy. Thermal Resistance at backside temperature (Tb) = 25C calculated from measured data. Parameter Min. Typical Max. Unit RF Frequency, RFfreq 18 40 GHz LO Frequency, LOfreq 9 20 GHz IF Frequency, IFfreq DC 3.5 GHz LO Power, LO +12 +22 dBm Min Ambient Operating Temp, Tmin -55 +15 Comments C Max Ambient Operating Temp, Tmax +125 C Max. Unit Comments 10 dB +150 C 260 C Absolute Minimum and Maximum Ratings Table 3. Minimum and Maximum Ratings Pin Min. RF CW Input Power, Pin Storage Temperature, Tstg Maximum Assembly Temperature, Tmax -65 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to this device. 2 20 second maximum AMMP-6545 Typical Performance (TA = 25C, Zin = Zout = 50 ), IF Freq = 2 GHz, LO Power = +15 dBm unless noted) UP-CONVERTER TYP. PERFORMANCE 7 9 11 IIP3 (dBm) C.L. (dB) 13 15 LO = +13 (dB) LO = +15 (dB) LO = +17 (dB) LO = +19 (dB) LO = +20 (dB) 17 19 21 23 25 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 UP-CONVERTER TYP. PERFORMANCE 28 LO = +13 dBm 26 LO = +15 dBm 24 LO = +17 dBm LO = +19 dBm 22 LO = +20 dBm 20 18 16 14 12 10 8 6 4 2 0 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Figure 1. Up-conversion loss at LO = +13 to +20 dBm (high side LO) Figure 2. Up-conversion IIP3 at LO = +13 to +20 dBm (high side LO) UP-CONVERTER TYP. PERFORMANCE 7 9 11 IIP3 (dBm) C.L. (dB) 13 15 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm LO = +20 dBm 17 19 21 23 25 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 UP-CONVERTER TYP. PERFORMANCE 28 LO = +13 dBm 26 LO = +15 dBm 24 LO = +17 dBm LO = +19 dBm 22 LO = +20 dBm 20 18 16 14 12 10 8 6 4 2 0 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 RF FREQUENCY (GHz) RF FREQUENCY (GHz) Figure 4. Up-conversion IIP3 at LO = +13 to +20 dBm (low side LO) Figure 3. Up-conversion loss at LO = +13 to +20 dBm (low side LO) DOWN-CONVERTER TYP. PERFORMANCE DOWN-CONVERTER TYP. PERFORMANCE 7 9 11 IIP3 (dBm) C.L. (dB) 13 15 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm LO = +20 dBm 17 19 21 23 25 18 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) Figure 5. Down-conversion loss at LO = +13 to +20 dB (low side LO) 3 36 38 40 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 18 LO = +13 dBm LO = +15 dBm LO = +17 dBm LO = +19 dBm LO = +20 dBm 20 22 24 26 28 30 32 34 RF FREQUENCY (GHz) Figure 6. Down-conversion IIP3 at LO = +13 to +20 dBm (low side LO) 36 38 40 AMMP-6545 Typical Performance -30 -40 -35 -45 LO = +12 dBm LO = +13 dBm LO = +14 dBm LO = +15 dBm LO = +16 dBm LO = +17 dBm -50 -40 -45 -50 -55 LO = +12 dBm LO = +13 dBm LO = +14 dBm LO = +15 dBm LO = +16 dBm LO = +17 dBm -60 -65 2LO-I LEAKAGE (dBm) 2*LO-R LEAKAGE (dBm) (TA = 25C, Zin = Zout = 50 ), IF Freq = 2 GHz, LO Power = +15 dBm unless noted) -55 -60 -65 -70 -75 -80 -85 -70 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 -90 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 RF FREQUENCY (GHz) 2*LO FREQUENCY (GHz) Figure 8. 2*LO-I leakage at LO = +12 to +17 dBm 20 20 25 25 30 30 35 40 LO = +12 dBm LO = +13 dBm LO = +14 dBm LO = +15 dBm LO = +16 dBm LO = +17 dBm 45 50 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 LO FREQUENCY (GHz) Figure 9. L-R isolation at LO = +12 to +17dBm 4 L-I ISOLATION (dB) L-R ISOLATION (dB) Figure 7. 2*LO-R leakage at LO = +12 to +17 dBm LO = +12 dBm LO = +13 dBm LO = +14 dBm LO = +15 dBm LO = +16 dBm LO = +17 dBm 35 40 45 50 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 LO FREQUENCY (GHz) Figure 10. L-I isolation at LO = +12 to +17dBm Package Dimension, PCB Layout and Tape and Reel information Please refer to Avago Technologies Application Note 5520, AMxP-xxxx production Assembly Process (Land Pattern A). AMMP-6545 Part Number Ordering Information Part Number Devices per Container Container AMMP-6545-BLKG 10 Antistatic bag AMMP-6545-TR1G 100 7" Reel AMMP-6545-TR2G 500 7" Reel Names and Contents of the Toxic and Hazardous Substances or Elements in the Products Part Name Toxic and Hazardous Substances or Elements Lead (Pb) (Pb) Mercury (Hg) Hg Cadmium (Cd) Cd Hexavalent (Cr(VI)) Cr(VI) Polybrominated biphenyl (PBB) PBB 100pF capacitor : indicates that the content of the toxic and hazardous substance in all the homogeneous materials of the part is below the concentration limit requirement as described in SJ/T 11363-2006. : indicates that the content of the toxic and hazardous substance in at least one homogeneous material of the part exceeds the concentration limit requirement as described in SJ/T 11363-2006. (The enterprise may further explain the technical reasons for the "x" indicated portion in the table in accordance with the actual situations.) SJ/T 11363-2006 SJ/T 11363-2006 "x" Note: EU RoHS compliant under exemption clause of "lead in electronic ceramic parts (e.g. piezoelectronic devices)" For product information and a complete list of distributors, please go to our website: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright (c) 2005-2011 Avago Technologies. All rights reserved. Obsoletes AV02-0251EN AV02-1382EN - July 21, 2011 Polybrominated diphenylether (PBDE) PBDE