TLP181
2002-09-25
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP181
Office Machine
Programmable Controllers
AC / DC−Input Module
Telecommunication
The TOSHIBA mini flat coupler TLP181 is a small outline coupler,
suitable for surface mount assembly.
TLP181 consist of a photo transistor optically coupled to a gallium
arsenide infrared emitting diode.
· Collector−emitter voltage: 80V (min.)
· Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
· Isolation voltage: 3750Vrms (min.)
· UL recognized: UL1577,
file no. E67349
· Option (V4) type
VDE approved: VDE0884 satisfied
Maximum operating insulation voltage: 565VPK
Highest permissible over voltage: 6000VPK
Pin Configuration (top view)
6
1: Anode
3: Cathode
4: Emitter
6: Collector
4
1
3
Unit in mm
TOSHIBA 11−4C1
Weight: 0.09 g
TLP181
2002-09-25
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Current Transfer Ratio
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type Classification
*1
Min. Max.
Marking Of Classification
(None) 50 600 BLANK, Y, Y■, G, G■, B, B■, GB
Rank Y 50 150 Y, Y■
Rank GR 100 300 G, G■
Rank BL 200 600 B, B■
TLP181
Rank GB 100 600 G, G■, B, B■, GB
*1: EX, Rank GB: TLP181 (GB)
(Note) Application, type name for certification test, please use standard product type name, i, e.
TLP181 (GB): TLP181
TLP181
2002-09-25
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Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 50 mA
Forward current detating ∆IF / °C -0.7 (Ta ≥ 53°C) mA / °C
Pulse forward current
(100µs pulse, 100pps) IFP 1 A
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 80 V
Emitter-collector valtage VECO 7 V
Collector current IC 50 mA
Collector power dissipation
(1 Circuit) PC 150 mW
Collector power dissipation
derating (1 Circuit Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~125 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature Tsol 260 (10s) °C
Total package power dissipation PT 200 mW
Total package power dissipation
derating (Ta ≥ 25°C) ∆PT / °C -2.0 mW / °C
Isolation voltage
(AC, 1min., R.H. ≤ 60%) (Note 1) BVS 3750
Vrms
(Note 1) Device considered a two-terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together
Recommended Operating Conditions
Characteristic Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 48 V
Forward current IF ― 16 20 mA
Collector current IC ― 1 10 mA
Operating temperature Topr -25 ― 85 °C
TLP181
2002-09-25
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF I
F = 10 mA 1.0 1.15 1.3 V
Reverse current IR V
R = 5 V — — 10 µA
LED
Capacitance CT V = 0, f = 1 MHz — 30 — pF
Collector-emitter
breakdown voltage V(BR) CEO IC = 0.5 mA 80 — — V
Emitter-collector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V
VCE = 48 V, ( Ambient light
below 1000 lx) — 0.01
(2)
0.1
(10) µA
Collector dark current ICEO
VCE = 48 V, Ta = 85°C, ( Ambient
light below 1000 lx) — 2
(4)
50
(50) µA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn. Typ. Max. Unit
50 — 600
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V
Rank GB 100 — 600
%
— 60 —
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V
Rank GB 30 — —
%
IC = 2.4 mA, IF = 8 mA — — 0.4
— 0.2 —
Collector-emitter
saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB — — 0.4
V
Off-state collector current IC (off) V
F = 0.7V, VCE = 48 V — 1 10 µA
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Capacitance
(input to output) CS VS = 0V, f = 1 MHz — 0.8 — pF
Isolation resistance RS VS = 500 V, R.H. ≤ 60% 1×1012 1014 — Ω
AC, 1 minute 3750 — —
AC, 1 second, in oil — 10000 —
Vrms
Isolation voltage BVS
DC, 1 minute, in oil — 10000 — Vdc
TLP181
2002-09-25
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Swiching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr — 2 —
Fall time tf — 3 —
Turn-on time ton — 3 —
Turn-off time toff
VCC = 10 V, IC = 2 mA
RL = 100Ω
— 3 —
µs
Turn-on time tON — 2 —
Storage time ts — 25 —
Turn-off time tOFF
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA
— 40 —
µs
Fig. 1 Switching time test circuit
tOFF
tON
VCE
IF
tS
4.5V
0.5V
IF VCC
RL
VCE
TLP181
2002-09-25
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PC – Ta
200
-20 0 20 40 60 80 100 120
160
120
80
40
0
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (°C)
IFP – DR
Duty cycle ratio DR
Pulse forward current IFP (mA)
3000
10
3
Pulse width ≤ 100µs
Ta = 25°C
10-3 3 10-23 10-1 3 100
30
50
100
300
1000
500
∆VF / ∆Ta – IF
Forward current IF (mA)
Forward voltage etemperature
coefficient ∆VF / ∆Ta (mV / °C)
-3.2
-0.4
0.1
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
0.3 0.5 1 3 5 10 30 50
IFP – VFP
Pulse forward voltage VFP (V)
1000
1
0.6
Pulse width ≤ 10µs
Repetitive
frequency = 100Hz
Ta = 25°C
500
300
100
50
30
10
5
3
1.0 1.4 1.8 2.2 2.6 3.0
Pulse forward current IFP (mA)
IF – Ta
Ambient temperature Ta (°C)
Allowable forward current
IF (mA)
100
-20
80
60
40
20
0
0 20 40 60 80 100 120
IF – VF
Forward voltage VF (V)
Forward current IF (mA)
100
0.001
0
10
1
0.1
0.01
0.4 0.8 1.2 1.6 2
-25°C 85°C 25
°C
TLP181
2002-09-25
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Collector current IC (mA)
IC – VCE
50
0
Collector-emitter voltage VCE (V)
0
40
30
20
10
2 4 6 8 10
50mA
30
m
A
20mA
15mA
1
0
m
A
PC (MAX.)
IF = 5mA
Ta = 25°C
Collector-emitter voltage VCE (V)
IC – VCE
30
00 1.0
0.2 0.4 0.6 0.8
20
10
Collector current IC (mA)
50mA
Ta = 25°C
40mA
30mA
20mA
10mA
5mA
2mA
IC – IF
Forward current IF (mA)
0.1
0.1
0.3
0.5
1
3
5
10
30
50
100
0.3 0.5 1 3 5 10 30 50
Sample
A
Sample B
Ta = 25°C
VCE = 10V
VCE = 5V
VCE = 0.4V
Collector current IC (mA)
Forward current IF (mA)
1000
10
IC / IF – IF
0.1 0.3 0.5 1 3 5 10 30 50
30
50
100
300
500
VCE = 10V
VCE = 5V
VCE = 0.4V
Ta = 25°C
Current transfer ratio
I
C / IF (%)
Sample B
Sample A
Collector dark current ID(ICEO) (µA)
ICEO – Ta
0
101
VCE = 48
V
5V
10V
24V
20 40 60 80 100
Ambient temperature Ta (°C)
100
10
-1
10
-2
10
-3
10
-4
TLP181
2002-09-25
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Collector-emitter saturation
voltage VCE(sat) (V)
VCE(sat) – Ta
0.24
0
Ambient temperature Ta (°C)
-40
0.20
0.12
0.08
0.04
-20 0 40 80 100 20 60
0.16
IF = 1mA
IC = 0.2mA
IC – Ta
100
1
-20 100
0 20 40 80
30
5
Collector current IC (mA)
VCE = 5V
60
0.1
0.3
0.5
3
10
50
1m
A
0.5mA
5mA
10mA
IF = 25m
A
Ambient temperature Ta (°C)
Switching Time – RL
Load resistance RL (kΩ)
1
10
30
50
100
300
500
1000
3 5 30 50
Switching time (µs)
5
3
1
Ta = 25°C
IF = 16mA
VCC = 5V
tOFF
ts
tON
100 10
Switching time (µs)
Switching Time – Ta
0
160
-20 20 40 60 80
Ambient temperature Ta (°C)
30
10
1
0.5
0.1
100
0.3
3
5
50 tOFF
ts
tON
IF = 16mA
VCC = 5V
RL = 1.9kΩ
TLP181
2002-09-25
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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
000707EBC
RESTRICTIONS O N PRODUCT USE
