PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A 7.5 TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C 2.0 A IDM TC = 25C, pulse width limited by TJM 5.0 A IA EAS TC = 25C TC = 25C 2.0 150 A mJ dV/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 86 W -55 ... +150 150 -55 ... +150 C C C G G = Gate S = Source TJ TJM Tstg G TL 1.6mm (0.062) from case for 10s 300 C TSOLD Plastic body for 10s 260 C Md Mounting torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 TO-252 2.50 3.00 0.35 g g g (TO-220) S (TAB) TO-220 (IXTP) G (TAB) D S TO-252 (IXTY) S (TAB) D = Drain TAB = Drain Features z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1000 VGS(th) VDS = VGS, ID = 100A 2.5 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) z z V 4.5 V 50 nA TJ = 125C VGS = 10V, ID = 0.5 * ID25, Note 1 6.0 z Applications: z 5 A 250 A z z 7.5 z z (c) 2008 IXYS CORPORATION, All rights reserved Easy to mount Space savings High power density Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor controls Robotics and servo controls DS99817B(04/08) IXTA2N100P IXTP2N100P IXTY2N100P Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS= 20V, ID = 0.5 * ID25, Note 1 1.0 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz TO-220 (IXTP) Outline 1.7 S 655 44 9.2 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 25 (External) 25 29 80 27 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 24.3 4.4 12.6 nC nC nC RthJC RthCS (TO-220) 0.50 1.45 C/W C/W td(on) tr td(off) tf Source-Drain Diode Pins: 1 - Gate 2 - Drain Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 2.0 A ISM Repetitive, pulse width limited by TJM 6.0 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 2A, -di/dt = 100A/s, VR = 100V, VGS = 0V 800 ns TO-252 (IXTY) Outline Note 1: Pulse test, t 300 s; duty cycle, d 2%. Pins: Dim. TO-263 (IXTA) Outline 1 - Gate 3 - Source Millimeter Min. Max. 2,4 - Drain Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA2N100P IXTP2N100P IXTY2N100P Fig. 2. Extended Output Characteristics @ 25C Fig. 1. Output Characteristics @ 25C 3.2 2.0 VGS = 10V 7V 1.8 VGS = 10V 7V 2.8 1.6 2.4 6V ID - Amperes ID - Amperes 1.4 1.2 1.0 0.8 2.0 6V 1.6 1.2 0.6 0.8 0.4 5V 0.4 0.2 0.0 5V 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 1A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 2.0 3.0 VGS = 10V 7V 1.8 2.8 VGS = 10V 2.6 6V 1.4 ID - Amperes RDS(on) - Normalized 1.6 1.2 1.0 0.8 5V 0.6 2.4 2.2 2.0 I D = 2A 1.8 I D = 1A 1.6 1.4 1.2 1.0 0.4 0.8 0.2 0.6 0.4 0.0 0 5 10 15 20 25 -50 30 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 1A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.2 2.6 VGS = 10V 2.4 2.0 TJ = 125C 1.6 2.0 ID - Amperes RDS(on) - Normalized 1.8 2.2 1.8 1.6 1.4 1.4 1.2 1.0 0.8 0.6 1.2 0.4 TJ = 25C 1.0 0.2 0.8 0.0 0.0 0.5 1.0 1.5 2.0 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 2.5 3.0 3.5 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXTA2N100P IXTP2N100P IXTY2N100P Fig. 7. Input Admittance Fig. 8. Transconductance 2.4 3.5 TJ = - 40C 2.2 3.0 2.0 2.5 g f s - Siemens ID - Amperes 1.8 1.6 1.4 TJ = 125C 25C - 40C 1.2 1.0 25C 2.0 125C 1.5 0.8 1.0 0.6 0.4 0.5 0.2 0.0 0.0 3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 0.0 0.2 0.4 0.6 0.8 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 20 22 24 26 Fig. 10. Gate Charge 6.0 10 5.5 9 VDS = 500V I D = 1A 5.0 8 4.5 I G = 10mA 7 4.0 VGS - Volts IS - Amperes 1.0 ID - Amperes 3.5 3.0 TJ = 125C 2.5 TJ = 25C 2.0 6 5 4 3 1.5 2 1.0 1 0.5 0.0 0 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0 0.95 2 4 VSD - Volts 6 8 10 12 14 16 18 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1,000 10.00 100 Z(th)JC - C / W Capacitance - PicoFarads Ciss Coss 10 1.00 0.10 Crss f = 1 MHz 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_2N100P (2C) 04-03-08-A