IXTP2N100P - Zilog - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 1000 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ1000 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C 2.0 A

IDM TC= 25°C, pulse width limited by TJM 5.0 A

IATC= 25°C 2.0 A

EAS TC= 25°C 150 mJ

dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C86W

TJ-55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TL1.6mm (0.062) from case for 10s 300 °C

TSOLD Plastic body for 10s 260 °C

MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.50 g

TO-220 3.00 g

TO-252 0.35 g

DS99817B(04/08)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250μA 1000 V

VGS(th) VDS = VGS, ID = 100μA 2.5 4.5 V

IGSS VGS = ±20V, VDS = 0V ±50 nA

IDSS VDS = VDSS 5 μA

VGS = 0V TJ = 125°C 250 μA

RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 6.0 7.5 Ω

PolarTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA2N100P

IXTP2N100P

IXTY2N100P

VDSS = 1000V

ID25 = 2.0A

RDS(on) ≤≤

≤≤

≤ 7.5ΩΩ

ΩΩ

G = Gate D = Drain

S = Source TAB = Drain

Features

zInternational standard packages

zUnclamped Inductive Switching

(UIS) rated

zLow package inductance

- easy to drive and to protect

Advantages

zEasy to mount

zSpace savings

zHigh power density

TO-263 (IXTA)

TO-220 (IXTP)

D(TAB)

(TAB)

TO-252 (IXTY)

Applications:

zSwitched-mode and resonant-mode

power supplies

zDC-DC Converters

zLaser Drivers

zAC and DC motor controls

zRobotics and servo controls

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA2N100P IXTP2N100P

IXTY2N100P

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified) Min. Typ. Max.

gfs VDS= 20V, ID = 0.5 • ID25, Note 1 1.0 1.7 S

Ciss 655 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 44 pF

Crss 9.2 pF

td(on) Resistive Switching Times 25 ns

trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 29 ns

td(off) RG = 25Ω (External) 80 ns

tf 27 ns

Qg(on) 24.3 nC

Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 4.4 nC

Qgd 12.6 nC

RthJC 1.45 °C/W

RthCS (TO-220) 0.50 °C/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

ISVGS = 0V 2.0 A

ISM Repetitive, pulse width limited by TJM 6.0 A

VSD IF = IS, VGS = 0V, Note 1 1.5 V

trr IF = 2A, -di/dt = 100A/μs, 800 ns

VR = 100V, VGS = 0V

Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Pins: 1 - Gate 2 - Drain

TO-220 (IXTP) Outline

TO-263 (IXTA) Outline

TO-252 (IXTY) Outline

Pins: 1 - Gate 2,4 - Drain

3 - Source

Dim. Millimeter Inches

Min. Max. Min. Max.

A 2.19 2.38 0.086 0.094

A1 0.89 1.14 0.035 0.045

A2 0 0.13 0 0.005

b 0.64 0.89 0.025 0.035

b1 0.76 1.14 0.030 0.045

b2 5.21 5.46 0.205 0.215

c 0.46 0.58 0.018 0.023

c1 0.46 0.58 0.018 0.023

D 5.97 6.22 0.235 0.245

D1 4.32 5.21 0.170 0.205

E 6.35 6.73 0.250 0.265

E1 4.32 5.21 0.170 0.205

e 2.28 BSC 0.090 BSC

e1 4.57 BSC 0.180 BSC

H 9.40 10.42 0.370 0.410

L 0.51 1.02 0.020 0.040

L1 0.64 1.02 0.025 0.040

L2 0.89 1.27 0.035 0.050

L3 2.54 2.92 0.100 0.115

IXTA2N100P IXTP2N100P

IXTY2N100P

Fi g . 1. Ou tp u t C h ar acter i sti cs

@ 25ºC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

01234567891011121314

- Volts

- A mpe res

= 10V

Fig. 2. Extended Output Characteristics

@ 25ºC

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

024681012141618202224262830

- Volts

- Am peres

= 10V

Fig. 3. Output Characteristics

@ 125ºC

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0 5 10 15 20 25 30

- Volts

- Am peres

= 10V

Fig. 4. R

DS(on)

Norm alized to I

= 1A Value

vs. Junction T emperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

-50 -25 0 25 50 75 100 125 150

- Degrees Centigrade

DS(on)

- N ormalize d

= 10V

= 2A

= 1A

Fig. 5. R

DS(on)

Norm alized to I

= 1A Value

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

- Amp eres

DS(on)

- N ormalize d

= 10V T

= 125ºC

= 25ºC

Fi g . 6. Maximum D r ain Cu r r en t vs.

Case Temp eratu r e

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150

- Deg rees Cent i grade

- Am peres

IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA2N100P IXTP2N100P

IXTY2N100P

IXYS REF: T_2N100P (2C) 04-03-08-A

Fig. 7. Input Adm ittance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

3.0 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2

- Volts

- A mpe re s

= 125ºC

25ºC

- 40ºC

Fig. 8. T ransconductance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6

- Amp eres

f s

- Siem ens

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

0.4 0.45 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95

- Volts

- Am peres

= 125ºC

= 25ºC

Fig. 10. Gate Charge

02468101214161820222426

- NanoCoulombs

- V o lts

= 500V

= 1A

= 10mA

Fig. 11. Capacitance

100

1,000

0 5 10 15 20 25 30 35 40

- Volts

Capacitance - PicoFarads

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. Maximu m Transi en t Th er ma l

Impedance

0.01

0.10

1.00

10.00

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

(th)JC

- ºC / W