NTE466 Silicon N-Channel JFET Transistor Chopper, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Reverse Gate-Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit -40 - - V VGS = -20V, VDS = 0 - - 0.25 nA VGS = -20V, VDS = 0, TA = +150C - - 0.5 A VDS = 15V, ID = 0.5nA -4 - -10 V VDS = 15V, VGS = -10V - - 0.25 nA VDS = 15V, VGS = -10V, TA = +150C - - 0.5 A VDS = 15V, VGS = 0, Note 1 50 - - mA VDS(on) ID = 20mA, VGS = 0 - - 0.75 V rDS(on) VGS = 0, ID = 0, f = 1kHz - - 25 OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Drain Cutoff Current V(BR)GSS IG = 1A, VDS = 0 IGSS VGS(off) ID(off) ON Characteristics Zero-Gate-Voltage Drain Current Drain-Source ON-Voltage IDSS Small-Signal Characteristics Drain-Source "ON" Resistance Input Capacitance Ciss VDS = 0, VGS = -10V, f = 1MHz - - 18 pF Reverse Transfer Capacitance Crss VDS = 0, VGS = -10V, f = 1MHz - - 0.8 pF td(on) VDD = 10V, ID(on) = 20mA, VGS(on) = 0, VGS(off) = -10V - - 6 ns - - 3 ns - - 25 ns Switching Characteristics (Note 2) Turn-On Delay Time Rise Time tr Turn-Off Time toff Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle 10%. Note 2. The ID(on) values are nominal; exact values vary slightly with transistor parameters. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Drain Source Gate 45 .041 (1.05)