NTE466 - NTE Electronics, Inc. - Datasheet.Directory

NTE466

Silicon N–Channel JFET Transistor

Chopper, High Speed Switch

Absolute Maximum Ratings:

Drain–Source Voltage, VDS 40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Drain–Gate Voltage, VDG 40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Reverse Gate–Source Voltage, VGSR –40V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Forward Gate Current, IG(f) 50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Total Device Dissipation (TA = +25°C), PD360mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 2.4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, Tstg –65° to +175°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

OFF Characteristics

Gate–Source Breakdown Voltage V(BR)GSS IG = 1A, VDS = 0 –40 – – V

Gate Reverse Current IGSS VGS = –20V, VDS = 0 – – 0.25 nA

VGS = –20V, VDS = 0, TA = +150°C – – 0.5 µA

Gate–Source Cutoff Voltage VGS(off) VDS = 15V, ID = 0.5nA –4 – –10 V

Drain Cutoff Current ID(off) VDS = 15V, VGS = –10V – – 0.25 nA

VDS = 15V, VGS = –10V, TA = +150°C – – 0.5 µA

ON Characteristics

Zero–Gate–Voltage Drain Current IDSS VDS = 15V, VGS = 0, Note 1 50 – – mA

Drain–Source ON–Voltage VDS(on) ID = 20mA, VGS = 0 – – 0.75 V

Small–Signal Characteristics

Drain–Source “ON” Resistance rDS(on) VGS = 0, ID = 0, f = 1kHz – – 25 Ω

Input Capacitance Ciss VDS = 0, VGS = –10V, f = 1MHz – – 18 pF

Reverse Transfer Capacitance Crss VDS = 0, VGS = –10V, f = 1MHz – – 0.8 pF

Switching Characteristics (Note 2)

Turn–On Delay T ime td(on) VDD = 10V, ID(on) = 20mA, – – 6 ns

Rise Time trVGS(on) = 0, VGS(off) = –10V – – 3 ns

Turn–Off Time toff – – 25 ns

Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle ≤ 10%.

Note 2. The ID(on) values are nominal; exact values vary slightly with transistor parameters.