SUU06N10-225L Vishay Siliconix N-Channel 100-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) () ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS 100 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175_C)b TC = 25_C TC = 125_C Pulsed Drain Current 3.75 8.0 Continuous Source Current (Diode Conduction) IS 6.5 Avalanche Current IAR 5.0 EAR 1.25 L = 0.1 mH TA = 25_C Operating Junction and Storage Temperature Range A mJ 20b TC = 25_C Maximum Power Dissipation V 6.5 ID IDM Repetitive Avalanche Energy (Duty Cycle 1%) Unit PD W 1.5a TJ, Tstg _C --55 to 175 THERMAL RESISTANCE RATINGS Parameter J Junction-to-Ambient ti t A bi ta Junction-to-Case Symbol t 10 sec Steady State RthJA RthJC Typical Maximum 40 50 80 100 6.0 7.5 Unit _C/W C/ Notes a. Surface Mounted on 1" x1" FR4 Board. b. See SOA curve for voltage derating. Document Number: 71254 S-01584--Rev. A, 17-Jul-00 www.vishay.com 1 SUU06N10-225L Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 100 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = 20 V 100 VDS = 80 V, VGS = 0 V 1 VDS = 80 V, VGS = 0 V, TJ = 125_C 50 VDS = 80 V, VGS = 0 V, TJ = 175_C 250 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage g Drain Current On-State Drain Currentb IDSS ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 3 A Drain Source On Drain-Source On-State State Resistanceb Forward Transconductanceb rDS(on) gfs V 3.0 8.0 nA mA m A 0.160 0.200 VGS = 10 V, ID = 3 A, TJ = 125_C 0.350 VGS = 10 V, ID = 3 A, TJ = 175_C 0.450 VGS = 4.5 V, ID = 1.0 A 0.180 VDS = 15 V, ID = 3 A 8.5 0.225 S Dynamica Input Capacitance Ciss 240 VGS = 0 V, VDS = 25 V, F = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 17 Total Gate Chargec Qg 2.7 Gate-Source Chargec Qgs VDS = 50 V,, VGS = 5 V,, ID = 6.5 A 42 pF 4.0 0.6 nC Gate-Drain Chargec Qgd 0.7 Turn-On Delay Timec td(on) 7 11 8 12 8 12 9 14 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDD = 50 V, RL = 7.5 ID 6.5 A, VGEN = 10 V, Rg = 2.5 tf ns Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current ISM 8.0 A Voltageb VSD IF = 6.5 A, VGS = 0 V 0.9 1.3 V Source-Drain Reverse Recovery Time trr IF = 6.5 A, di/dt = 100 A/ms 35 60 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 ms, duty cycle 2%. c. Independent of operating temperature. www.vishay.com 2 Document Number: 71254 S-01584--Rev. A, 17-Jul-00 SUU06N10-225L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 15 15 TC = --55_C VGS = 10 thru 5 V 25_C 12 9 I D -- Drain Current (A) I D -- Drain Current (A) 12 4V 6 3 9 125_C 6 3 3, 2 V 0 0 0 2 4 6 8 10 0 VDS -- Drain-to-Source Voltage (V) 2 Transconductance 4 5 On-Resistance vs. Drain Current 0.30 TC = --55_C 0.25 r DS(on)-- On-Resistance ( ) 12 25_C 9 125_C 6 3 0 VGS = 4.5 V 0.20 VGS = 10 V 0.15 0.10 0.05 0.00 0 3 6 9 12 0 15 3 6 ID -- Drain Current (A) 9 12 15 4 5 ID -- Drain Current (A) Capacitance Gate Charge 350 10 V GS -- Gate-to-Source Voltage (V) 300 C -- Capacitance (pF) 3 VGS -- Gate-to-Source Voltage (V) 15 g fs -- Transconductance (S) 1 Ciss 250 200 150 100 Coss 50 Crss 0 VDS = 50 V ID = 6.5 A 8 6 4 2 0 0 20 40 60 80 VDS -- Drain-to-Source Voltage (V) Document Number: 71254 S-01584--Rev. A, 17-Jul-00 100 0 1 2 3 Qg -- Total Gate Charge (nC) www.vishay.com 3 SUU06N10-225L Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 10 2.0 I S -- Source Current (A) r DS(on)-- On-Resistance ( ) (Normalized) VGS = 10 V ID = 3 A 1.5 1.0 TJ = 175_C TJ = 25_C 0.5 0.0 --50 1 --25 0 25 50 75 100 125 150 175 0 TJ -- Junction Temperature (_C) 0.2 0.4 0.6 0.8 1.0 1.2 VSD -- Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Avalanche Drain Current vs. Case Temperature Safe Operating Area 8 10 10 ms Limited by rDS(on) I D -- Drain Current (A) I D -- Drain Current (A) 6 4 2 100 ms 1 1 ms 10 ms TC = 25_C Single Pulse 100 ms 1 s, dc 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS -- Drain-to-Source Voltage (V) TC -- Case Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 --5 10 --4 10 --3 10 --2 10 --1 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71254 S-01584--Rev. 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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1