SUU06N10-225L
Vishay Siliconix
Document Number: 71254
S-01584—Rev. A, 17-Jul-00 www.vishay.com
1
N-Channel 100-V (D-S) 175_CMOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Ω) ID(A)
1
0
0
0.200 @ VGS =10V 6.5
100 0.225 @ VGS =4.5V 6.0
D
G
S
N-Channel MOSFET
Order Number:
SUU06N10-225L
TO-251
SGD
Top View
and DRAIN-TAB
ABSOLUTE MAXIMUM RATINGS (TA=25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100
V
Gate-Source Voltage VGS 20
V
C
o
n
t
i
n
u
o
u
s
D
r
a
i
n
C
u
r
r
e
n
t
(
T
=
1
7
5
_
C
)
b
TC=25_C
I
D
6.5
Continuous Drain Current (TJ= 175_C)
b
TC= 125_CID3.75
Pulsed Drain Current IDM 8.0 A
Continuous Source Current (Diode Conduction) IS6.5
Avalanche Current IAR 5.0
Repetitive Avalanche Energy (Duty Cycle ≤1%) L=0.1mH EAR 1.25 mJ
M
a
x
i
m
u
m
P
o
w
e
r
D
i
s
s
i
p
a
t
i
o
n
TC=25_C
P
D
20b
W
Maximum Power Dissipation TA=25_CPD1.5a
W
Operating Junction and Storage Temperature Range TJ,T
stg --55 to 175 _C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
J
t
i
t
A
b
i
t
a
t≤10 sec
R
40 50
Junction-to-AmbientaSteady State RthJA 80 100 _C/W
Junction-to-Case RthJC 6.0 7.5
C
/
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
SUU06N10-225L
Vishay Siliconix
www.vishay.com
2Document Number: 71254
S-01584—Rev. A, 17-Jul-00
SPECIFICATIONS (TJ=25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min TypaMax Unit
Static
Drain-Source Breakdown Voltage V(BR)DSS VGS =0V,I
D= 250 mA100
V
Gate Threshold Voltage VGS(th) VDS =V
GS,I
D= 250 mA1.0 3.0
V
Gate-Body Leakage IGSS VDS =0V,V
GS =20 V 100 nA
VDS =80V,V
GS =0V 1
Zero Gate Voltage Drain Current IDSS VDS =80V,V
GS =0V,T
J= 125_C50 mA
g
D
S
S
VDS =80V,V
GS =0V,T
J= 175_C250
m
On-State Drain CurrentbID(on) VDS =5V,V
GS =10V 8.0 A
VGS =10V,I
D=3A 0.160 0.200
D
r
a
i
n
S
o
u
r
c
e
O
n
S
t
a
t
e
R
e
s
i
s
t
a
n
c
e
b
r
VGS =10V,I
D=3A,T
J= 125_C0.350
Ω
Drain-Source On-State Resistance
b
rDS(on) VGS =10V,I
D=3A,T
J= 175_C0.450 Ω
VGS =4.5V,I
D=1.0A 0.180 0.225
Forward Transconductancebgfs VDS =15V,I
D=3A 8.5 S
Dynamica
Input Capacitance Ciss 240
Output Capacitance Coss VGS =0V,V
DS =25V,F=1MHz 42 pF
Reverse Transfer Capacitance Crss 17
Total Gate ChargecQg2.7 4.0
Gate-Source ChargecQgs VDS =50V, V
GS =5V,I
D=6.5A 0.6 nC
Gate-Drain ChargecQgd
D
S
,
G
S
,
D
0.7
Turn-On Delay Timectd(on) 711
Rise Timectr
V
D
D
=50
V
,R
L
=7.5Ω812
n
s
Turn-Off Delay Timectd(off)
V
D
D
=
5
0
V
,
R
L
=
7
.
5
Ω
ID≅6.5 A, VGEN =10V,R
g=2.5Ω812 ns
Fall Timectf914
Source-Drain Diode Ratings and Characteristic (TC=25_C)
Pulsed Current ISM 8.0 A
Diode Forward VoltagebVSD IF=6.5A,V
GS =0V 0.9 1.3 V
Source-Drain Reverse Recovery Time trr IF= 6.5 A, di/dt = 100 A/ms35 60 ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤300 ms, duty cycle ≤2%.
c. Independent of operating temperature.
SUU06N10-225L
Vishay Siliconix
Document Number: 71254
S-01584—Rev. A, 17-Jul-00 www.vishay.com
3
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
3
6
9
12
15
0 3 6 9 12 15
0
50
100
150
200
250
300
350
0 20406080100
Output Characteristics Transfer Characteristics
Capacitance Gate Charge
Transconductance On-Resistance vs. Drain Current
VDS -- Drain-to-Source Voltage (V)
-- Drain Current (A)ID
VGS -- Gate-to-Source Voltage (V)
-- Drain Current (A)ID
-- Gate-to-Source Voltage (V) -- On-Resistance (
Qg-- Total Gate Charge (nC)
ID-- Drain Current (A)
VDS -- Drain-to-Source Voltage (V)
C -- Capacitance (pF)
rDS(on) Ω)VGS
-- Transconductance (S)gfs
0
3
6
9
12
15
0246810
0
2
4
6
8
10
012345
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0 3 6 9 12 15
0
3
6
9
12
15
012345
125_C
3, 2 V
TC=--55_C
VDS =50V
ID=6.5A
VGS =10thru5V
4V
VGS =10V
VGS =4.5V
TC=--55_C
25_C
125_C
Coss
Ciss
ID-- Drain Current (A)
25_C
Crss
SUU06N10-225L
Vishay Siliconix
www.vishay.com
4Document Number: 71254
S-01584—Rev. A, 17-Jul-00
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.5
1.0
1.5
2.0
2.5
--50 --25 0 25 50 75 100 125 150 175
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
(Normalized)
-- On-Resistance (
TJ-- Junction Temperature (_C) VSD -- Source-to-Drain Voltage (V)
rDS(on) Ω)
-- Source Current (A)IS
10
10.2 0.6 0.8 1.2
VGS =10V
ID=3A
TJ=25_C
00.4 1.0
TJ= 175_C
THERMAL RATINGS
Normalized Effective Transient
Thermal Impedance
Safe Operating Area
VDS -- Drain-to-Source Voltage (V)
-- Drain Current (A)ID
0.1 0.1 1 10 100
1
10
TC=25_C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
2
1
0.1
0.01 10-- 5 10-- 3 10-- 2 10-- 1 110
Maximum Avalanche Drain Current
vs. Case Temperature
TC-- Case Temperature (_C)
-- Drain Current (A)ID
0
2
4
6
8
0 25 50 75 100 125 150 175
0.2
0.1
Duty Cycle = 0.5
10 ms
100 ms
1s,dc
100
100 ms
10 ms
1ms
0.05
0.02
Single Pulse
Limited by rDS(on)
10-- 4
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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