MCP1804 150 mA, 28V LDO Regulator With Shutdown Features: Description: * 150 mA Output Current * Low Dropout Voltage, 260 mV Typical @ 20 mA, VR = 3.3V * 50 A Typical Quiescent Current * 0.01 A Typical Shutdown Current * Input Operating Voltage Range: 2.0V to 28.0V * Standard Output Voltage Options (1.8V, 2.5V, 3.0V, 3.3V, 5.0V, 10.0V, 12.0V) * Output Voltage Accuracy: 2% * Output Voltages from 1.8V to 18.0V in 0.1V Increments are Available upon Request * Stable with Ceramic Output Capacitors * Current Limit Protection with Current Foldback * Shutdown Pin * High PSRR: 50 dB Typical @ 1 kHz The MCP1804 is a family of CMOS low dropout (LDO) voltage regulators that can deliver up to 150 mA of current while consuming only 50 A of quiescent current (typical, 1.8V VOUT 5.0V). The input operating range is specified from 2.0V to 28.0V. Applications: * * * * * * Cordless Phones, Wireless Communications PDAs, Notebook and Netbook Computers Digital Cameras Microcontroller Power Car Audio and Navigation Systems Home Appliances The MCP1804 is capable of delivering 100 mA with only 1300 mV (typical) of input to output voltage differential (VOUT = 3.3V). The output voltage tolerance of the MCP1804 at +25C is a maximum of 2%. Line regulation is 0.15% typical at +25C. The LDO input and output are stable with 0.1 F of input and output capacitance. Ceramic, tantalum or aluminum electrolytic capacitors can all be used for input and output. Overcurrent limit with current foldback to 40 mA (typical) provides short circuit protection. A shutdown (SHDN) function allows the output to be enabled or disabled. When disabled, the MCP1804 draws only 0.01 A of current (typical). Package options include the 3-lead SOT-89, 3-lead SOT-223, 5-lead SOT-23 and 5-lead SOT-89. Package Types Related Literature: * AN765, "Using Microchip's Micropower LDOs" (DS00765), Microchip Technology Inc., (c)2002 * AN766, "Pin-Compatible CMOS Upgrades to BiPolar LDOs" (DS00766), Microchip Technology Inc., (c)2002 * AN792, "A Method to Determine How Much Power a SOT23 Can Dissipate in an Application" (DS00792), Microchip Technology Inc., (c)2001 SOT-89-3 SOT-223-3 (Top View) (Top View) 1 2 3 VIN VOUT GND 1 2 VOUT GND 3 VIN SOT-89-5 SOT-23-5 VOUT SHDN VIN NC 5 4 5 4 (Top View) 2009-2013 Microchip Technology Inc. 1 2 3 VIN GND NC 1 2 3 VOUT GND SHDN DS20002200D-page 1 MCP1804 Functional Block Diagram VOUT VIN * Thermal Protection SHDN Shutdown Control Voltage Reference + Current Limiter Error Amplifier *5-Pin Versions Only GND Typical Application Circuit MCP1804 VIN 1 VIN VOUT 5 SOT-23 12V Battery + CIN 1 F Ceramic DS20002200D-page 2 2 GND 3 NC SHDN VOUT 5.0V @ 30 mA COUT 1 F Ceramic 4 2009-2013 Microchip Technology Inc. MCP1804 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Input Voltage ........................................................................................................................................................... +30V Output Current (Continuous)............................................................................................................. PD/(VIN - VOUT) mA Output Current (Peak).......................................................................................................................................... 300 mA Output Voltage ...................................................................................................................... (VSS - 0.3V) to (VIN + 0.3V) SHDN Voltage .................................................................................................................................. (VSS - 0.3V) to +30V Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VR + 2.0V, Note 1, COUT = 1 F (X7R), CIN = 1 F (X7R), VSHDN = VIN, TA = +25C Parameters Sym. Min. Typ. Max. Units Conditions 2.0 -- 28.0 V Note 1 -- 50 105 A 1.8V VOUT 5.0V -- 60 115 A 5.1V VOUT 12.0V -- 65 125 A 12.1V VOUT 18.0V -- 0.01 0.10 A SHDN = 0V Input / Output Characteristics Input Operating Voltage VIN Input Quiescent Current IQ Shutdown Current ISHDN Maximum Output Current IOUT Current Limiter Output Short Circuit Current Output Voltage Regulation VOUT Temperature Coefficient Note 1: 2: 3: 4: 5: -- IL = 0 mA -- VIN = VR + 3.0V 100 -- -- mA VOUT < 3.0V 150 -- -- mA VOUT 3.0V ILIMIT -- 200 -- mA IOUT_SC -- 40 -- mA VOUT VR - 2.0% VR VR + 2.0% V TCVOUT -- 100 -- ppm/C IOUT = 10 mA, Note 2 IOUT = 20 mA, -40C TA 85C, Note 3 The minimum VIN must meet one condition: VIN (VR + 2.0V). VR is the nominal regulator output voltage with an input voltage of VIN = VR + 2.0V. For example: VR = 1.8V, 2.5V, 3.0V, 3.3V, etc. TCVOUT = (VOUT-HIGH - VOUT-LOW) * 106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VR + 2.0V. 2009-2013 Microchip Technology Inc. DS20002200D-page 3 MCP1804 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VR + 2.0V, Note 1, COUT = 1 F (X7R), CIN = 1 F (X7R), VSHDN = VIN, TA = +25C Parameters Line Regulation Load Regulation Dropout Voltage Note 1, Note 5 Sym. VOUT/(VOUTXVIN) Min. Typ. Max. Units Conditions (VR + 2V) VIN 28V, Note 1 -- -- 0.05 0.10 %/V IOUT = 5 mA -- 0.15 0.30 %/V IOUT = 13 mA -- 50 90 mV 1.8V VOUT 5.0V -- 110 175 mV 5.1V VOUT 12.0V -- 180 275 mV 12.1V VOUT 18.0V -- 550 710 mV 1.8V VR 1.9V -- 450 600 mV 2.0V VR 2.1V -- 390 520 mV 2.2V VR 2.4V -- 310 450 mV 2.5V VR 2.9V -- 260 360 mV 3.0V VR 3.9V -- 220 320 mV 4.0V VR 4.9V -- 190 280 mV 5.0V VR 6.4V -- 170 230 mV 6.5V VR 8.0V -- 130 190 mV 8.1V VR 10.0V -- 120 170 mV 10.1V VR 18.0V VOUT/VOUT -- VDROPOUT IL = 1.0 mA to 50 mA, Note 4 -- IL = 20 mA -- IL = 100 mA -- 2200 2700 mV 1.8V VR 1.9V -- 1900 2600 mV 2.0V VR 2.1V -- 1700 2200 mV 2.2V VR 2.4V -- 1500 1900 mV 2.5V VR 2.9V -- 1300 1700 mV 3.0V VR 3.9V -- 1100 1500 mV 4.0V VR 4.9V -- 1000 1300 mV 5.0V VR 6.4V -- 800 1150 mV 6.5V VR 8.0V -- 700 950 mV 8.1V VR 10.0V -- 650 850 mV 10.1V VR 18.0V SHDN "H" Voltage VSHDN_H 1.1 -- VIN V VIN = 28V SHDN "L" Voltage VSHDN_L 0 -- 0.35 V VIN = 28V ISHDN -0.1 -- 0.1 A VIN = 28V, VSHDN = GND or VIN SHDN Current Note 1: 2: 3: 4: 5: The minimum VIN must meet one condition: VIN (VR + 2.0V). VR is the nominal regulator output voltage with an input voltage of VIN = VR + 2.0V. For example: VR = 1.8V, 2.5V, 3.0V, 3.3V, etc. TCVOUT = (VOUT-HIGH - VOUT-LOW) * 106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VR + 2.0V. DS20002200D-page 4 2009-2013 Microchip Technology Inc. MCP1804 ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise specified, all limits are established for VIN = VR + 2.0V, Note 1, COUT = 1 F (X7R), CIN = 1 F (X7R), VSHDN = VIN, TA = +25C Parameters Sym. Min. Typ. Max. Units PSRR -- 50 -- dB f = 1 kHz, IL = 20 mA, VIN_AC = 0.5V pk-pk, CIN = 0 F Thermal Shutdown Protection TSD -- 150 -- C TJ = 150C Thermal Shutdown Hysteresis TSD -- 25 -- C Power Supply Ripple Rejection Ratio Note 1: 2: 3: 4: 5: Conditions The minimum VIN must meet one condition: VIN (VR + 2.0V). VR is the nominal regulator output voltage with an input voltage of VIN = VR + 2.0V. For example: VR = 1.8V, 2.5V, 3.0V, 3.3V, etc. TCVOUT = (VOUT-HIGH - VOUT-LOW) * 106 / (VR * Temperature), VOUT-HIGH = highest voltage measured over the temperature range. VOUT-LOW = lowest voltage measured over the temperature range. Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output voltage due to heating effects are determined using thermal regulation specification TCVOUT. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured value with an applied input voltage of VR + 2.0V. TEMPERATURE SPECIFICATIONS Parameters Sym. Min. Typ. Max. Units Operating Temperature Range TA -40 -- +85 C Operating Junction Temperature Range TJ -40 -- +125 C Storage Temperature Range TA -55 -- +125 C JA -- 180 -- JC -- 52 -- Conditions Temperature Ranges Thermal Package Resistance Thermal Resistance, 3LD SOT-89 Thermal Resistance, 3LD SOT-223 Thermal Resistance, 5LD SOT-23 Thermal Resistance, 5LD SOT-89 2009-2013 Microchip Technology Inc. JA -- 62 -- JC -- 15 -- JA -- 256 -- JC -- 81 -- JA -- 180 -- JC -- 52 -- C/W EIA/JEDEC(R) JESD51-7 FR-4 0.063 4-Layer Board C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board C/W EIA/JEDEC JESD51-7 FR-4 0.063 4-Layer Board DS20002200D-page 5 MCP1804 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. TA = -40C TA = 25C TA = 85C VIN = SHDN = 4.8V VR = 2.8V 0 50 100 150 200 Output Current (mA) FIGURE 2-1: Current. Outtput Voltage (V) Ou utput Voltage (V) 2.0 1.8 2.0 1.8 1.6 1.4 1.2 1.0 0.8 06 0.6 0.4 0.2 0.0 250 Output Voltage vs. Output 1.2 1.0 0.8 06 0.6 0 5.0 3.0 2.0 VIN = SHDN = 8.0V VR = 5V 50 100 150 200 Output Current (mA) FIGURE 2-4: Current. 5.0 TA = -40C TA = 25C TA = 85C VR = 1.8V 0.4 0.2 0.0 6.0 1.0 250 300 Output Voltage vs. Output 4.0 VIN = 6V VIN = 7V VIN = 8V 3.0 2.0 1.0 VR = 5.0V 0.0 0.0 0 50 100 150 200 Output Current (mA) FIGURE 2-2: Current. 250 0 300 Output Voltage vs. Output 14.0 12.0 12.0 10.0 TA = -40C TA = 25C TA = 85C 6.0 4.0 VIN = SHDN = 15V VR = 12 V 2.0 100 FIGURE 2-5: Current. 14.0 8.0 50 150 200 250 300 Output Current (mA) Output Voltage (V) Outp put Voltage (V) 1.4 6.0 4.0 VIN = 2.8V VIN = 3.8V VIN = 4.8V 1.6 300 Outpu ut Voltage (V) Output Voltage (V) Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. Output Voltage vs. Output 10.0 VIN = 13V VIN = 14V VIN = 15V 8.0 6.0 4.0 2.0 0.0 VR = 12V 0.0 0 50 FIGURE 2-3: Current. DS20002200D-page 6 100 150 200 Output Current (mA) 250 300 Output Voltage vs. Output 0 FIGURE 2-6: Current. 50 100 150 200 Output Current (mA) 250 300 Output Voltage vs. Output 2009-2013 Microchip Technology Inc. MCP1804 Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. 2.1 2.1 VR = 1.8V VR = 1.8V 2.0 IOUT = 1 mA IOUT = 10 mA IOUT = 30 mA 1.9 Output Voltage (V) Outp put Voltage (V) 2.0 1.8 1.7 1.6 1.5 1.8 1.7 IOUT = 1 mA IOUT = 10 mA IOUT = 30 mA 1.6 1.5 0.8 1.3 1.8 2.3 2.8 Input Voltage (V) FIGURE 2-7: Voltage. 3.3 3.8 Output Voltage vs. Input 4 8 FIGURE 2-10: Voltage. 12 16 20 Input Voltage (V) 24 VR = 5V 5.8 5.6 Outp put Voltage (V) 5.2 VR = 5V 5.8 IOUT = 1 mA IOUT = 10 mA IOUT = 30 mA 5.4 5.0 4.8 4.6 4.4 5.6 5.4 5.2 5.0 4.8 4.6 IOUT = 1 mA IOUT = 10 mA IOUT = 30 mA 4.4 4.2 4.2 4.0 4.0 4.0 4.5 FIGURE 2-8: Voltage. 5.0 Input Voltage (V) 5.5 8 6.0 Output Voltage vs. Input 12 FIGURE 2-11: Voltage. 15.0 16 20 Input Voltage (V) 24 28 Output Voltage vs. Input 15.0 VR = 12V VR = 12V 14.0 Outp put Voltage (V) 14.0 Outpu ut Voltage (V) 28 Output Voltage vs. Input 6.0 6.0 Outp put Voltage (V) 1.9 13.0 12.0 11 0 11.0 IOUT = 1 mA IOUT = 10 mA IOUT = 30 mA 10.0 13.0 12.0 11 0 11.0 IOUT = 1 mA IOUT = 10 mA IOUT = 30 mA 10.0 9.0 9.0 10 FIGURE 2-9: Voltage. 11 12 Input Voltage (V) 13 14 Output Voltage vs. Input 2009-2013 Microchip Technology Inc. 14 16 FIGURE 2-12: Voltage. 18 20 22 24 Input Voltage (V) 26 28 Output Voltage vs. Input DS20002200D-page 7 MCP1804 Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. 70 4.0 Sup pply Current (A) Dropo out Voltage (V) 3.5 TA = 85C TA = 25C TA = -40C 3.0 2.5 2.0 1.5 1.0 60 50 40 30 TA = 85C 8 C TA = 25C TA = -40C 20 10 0.5 0 0.0 0 25 50 75 100 Output Current (mA) FIGURE 2-13: Current. 125 0 150 Dropout Voltage vs. Load TA = 85C TA = 25C TA = -40C 2.5 2.0 1.5 1.0 12 16 20 Input Voltage (V) 28 Supply Current vs. Input 60 50 40 30 TA = 85C TA = 25C TA = -40C 20 10 0.5 0.0 0 0 25 FIGURE 2-14: Current. 50 75 100 Output Current (mA) 125 150 Dropout Voltage vs. Load 0 4 8 FIGURE 2-17: Voltage. 4.0 12 16 20 Input Voltage (V) 24 28 Supply Current vs. Input 70 VR = 12V 3.0 TA = 85C TA = 25C TA = -40C 2.5 2.0 VR = 12V Sup pply Current (A) 3.5 Dropout Voltage (V) 24 VR = 5V Sup pply Current (A) 3.0 8 70 VR = 5V 3.5 4 FIGURE 2-16: Voltage. 4.0 Drop pout Voltage (V) VR = 1.8V VR = 1.8V 1.5 1.0 60 50 40 30 TA = 85C TA = 25C TA = -40C 20 10 0.5 0 0.0 0 25 FIGURE 2-15: Current. DS20002200D-page 8 50 75 100 Output Current (mA) 125 150 Dropout Voltage vs. Load 0 4 FIGURE 2-18: Voltage. 8 12 16 20 Input Voltage (V) 24 28 Supply Current vs. Input 2009-2013 Microchip Technology Inc. MCP1804 Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. 2.00 70 VR = 1.8V 1.95 60 Outtput Voltage (V) Sup pply Current (A) VR = 1.8V 50 40 30 20 10 1.80 1.75 IOUT = 1 mA IOUT = 10 mA IOUT = 20 mA 1.70 1.60 -40 -20 FIGURE 2-19: Voltage. 0 20 40 60 Ambient Temperature (C) 80 100 Supply Current vs. Input -50 -25 0 25 50 75 Ambient Temperature (C FIGURE 2-22: Temperature. 70 40 30 20 VR = 5V 5.15 Ou utput Voltage (V) 50 100 Output Voltage vs. Ambient 5.20 VR = 5V 60 Sup pply Current (A) 1.85 1.65 0 10 5.10 5.05 5.00 4.95 IOUT = 1 mA IOUT = 10 mA IOUT = 20 mA 4.90 4.85 4.80 0 -40 -20 FIGURE 2-20: Voltage. 0 20 40 60 Ambient Temperature (C) 80 -50 100 Supply Current vs. Input 30 20 Output Voltage vs. Ambient VR = 12V 12.4 Output Voltage (V) 40 12.3 12.2 12.1 12.0 11.9 11.8 IOUT = 1 mA IOUT = 10 mA IOUT = 20 mA 11.7 10 11.6 0 100 12.5 VR = 12V 60 50 -25 0 25 50 75 Ambient Temperature (C FIGURE 2-23: Temperature. 70 Sup pply Current (A) 1.90 11.5 -40 -20 FIGURE 2-21: Voltage. 0 20 40 60 Ambient Temperature (C) 80 100 Supply Current vs. Input 2009-2013 Microchip Technology Inc. -50 FIGURE 2-24: Temperature. -25 0 25 50 75 Ambient Temperature (C 100 Output Voltage vs. Ambient DS20002200D-page 9 MCP1804 Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. 3.34 4.3 3.32 VOUT 3.3 3.30 2.3 Time (1 ms/div) Inpu ut Voltage (V) 8 VIN 7 4.3 3.26 1.3 3.26 FIGURE 2-28: 9 7 4 4.98 4.96 3 FIGURE 2-29: Dynamic Line Response. 16 12.08 VIN 12.06 14 12.04 12.02 VOUT 15 put Voltage (V) Inp VR = 12V IOUT = 1 mA Outp put Voltage (V) Inpu ut Voltage (V) 4.96 Time (1 ms/div) 15 14 VR = 12V IOUT = 30 mA 12.08 12.06 12.04 13 12.02 VOUT 12 12.00 11.98 11 11.98 11.96 10 12 12.00 11 Dynamic Line Response. 11.96 Time (1 ms/div) Time (1 ms/div) DS20002200D-page 10 5.02 VOUT 4.98 Dynamic Line Response. FIGURE 2-27: 5.04 6 Time (1 ms/div) 10 5.06 5.00 4 13 VR = 5V IOUT = 30 mA 5 5.00 VIN 5.08 8 5.06 5 16 Dynamic Line Response. VIN 5.02 FIGURE 2-26: 3.32 VOUT 3.28 VOUT 3 3.34 2.3 5.04 6 5.3 3.28 5.08 VR = 5V IOUT = 1 mA 3.36 3.30 Dynamic Line Response. 9 6.3 Output Voltage (V) FIGURE 2-25: 3.38 3.3 Inp put Voltage (V) 1.3 VR = 3.3V IOUT = 30 mA Outp put Voltage (V) 5.3 3.36 Inpu ut Voltage (V) VIN VIN Outp put Voltage (V) Input Voltage (V) 6.3 7.3 Outtput Voltage (V) 3.38 VR = 3.3V IOUT = 1 mA Outp put Voltage (V) 7.3 FIGURE 2-30: Dynamic Line Response. 2009-2013 Microchip Technology Inc. MCP1804 Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. 3.3 3.2 90 3.1 3.0 6 2 5 0 -2 0 Dynamic Load Response. 5.2 120 5.1 VOUT 90 4.9 4.8 60 IOUT 4.6 Inp put Voltage (V) 6 4.7 30 0 2 0 5 VOUT -2 FIGURE 2-35: 150 3 VR = 3.3V IOUT = 30 mA 11.4 60 IOUT 11.0 30 Input Voltage (V) 11.6 Outpu ut Current (mA) 120 90 11.8 0 8 7 VIN 4 2 6 Dynamic Load Response. 5 VOUT 0 4 2 -2 3 -4 VR = 5.0V IOUT = 1 mA -8 2 1 0 Time (1 ms/div) Time (1 ms/div) 2009-2013 Microchip Technology Inc. 1 Start-up Response. -6 10.8 10.6 2 0 8 6 VOUT 4 Time (1 ms/div) VR = 12V 12.4 Outp put Voltage (V) 6 -8 Dynamic Load Response. 12.6 FIGURE 2-33: 7 4 Time (1 ms/div) 11.2 8 VIN -6 4.4 12.0 Start-up Response. -4 4.5 12.2 0 8 150 Outpu ut Current (mA) Outp put Voltage (V) FIGURE 2-34: VR = 5V 5.3 1 Time (1 ms/div) 5.4 FIGURE 2-32: 2 VR = 3.3V IOUT = 1 mA -8 Time (1 ms/div) 5.0 3 -6 2.6 4 VOUT -4 30 2.7 FIGURE 2-31: 7 4 Outp put Voltage (V) 2.8 IOUT 8 VIN Outp put Voltage (V) 2.9 60 Inp put Voltage (V) 6 120 VOUT Output Current (mA) put Voltage (V) Outp 3.4 8 150 VR = 3.3V 3.5 Outp put Voltage (V) 3.6 FIGURE 2-36: Start-up Response. DS20002200D-page 11 MCP1804 Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. 6 4 6 2 5 VOUT 0 4 2 -2 3 2 VR = 5.0V IOUT = 30 mA -6 -8 4 6 2 5 0 -2 FIGURE 2-40: 18 VOUT 0 9 -5 6 VR = 12V IOUT = 1 mA SHD DN Voltage (V) 12 -10 6 15 5 2 0 4 2 -2 3 2 VR = 5V IOUT = 1 mA 1 0 SHDN Response. 15 18 SHDN 15 12 VOUT 0 9 -5 6 VR = 12V IOUT = 30 mA -15 SHD DN Voltage (V) 5 10 Outp put Voltage (V) Inp put Voltage (V) FIGURE 2-41: 18 VIN Start-up Response. 15 5 12 VOUT 0 9 -5 6 3 -10 0 -15 VR = 12V IOUT = 1 mA 3 0 Time (1 ms/div) Time (1 ms/div) DS20002200D-page 12 5 VOUT Time (1 ms/div) 15 FIGURE 2-39: 6 -8 Start-up Response. -10 7 4 Time (1 ms/div) 10 8 SHDN -6 0 FIGURE 2-38: SHDN Response. -4 3 -15 0 8 Outp put Voltage (V) Inp put Voltage (V) 10 1 Time (1 ms/div) Start-up Response. VIN 2 VR = 3.3V IOUT = 1 mA -8 0 15 3 -4 Time (1 ms/div) FIGURE 2-37: 4 VOUT -6 1 7 Outpu ut Voltage (V) -4 8 SHDN Outpu ut Voltage (V) 8 7 Outpu ut Voltage (V) VIN SHDN N Voltage (V) Inp put Voltage (V) 6 8 Outp put Voltage (V) 8 FIGURE 2-42: SHDN Response. 2009-2013 Microchip Technology Inc. MCP1804 Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. SHD DN Voltage (V) 6 8 90 7 80 4 6 2 5 VOUT 0 4 2 -2 3 -4 2 VR = 3.3V IOUT = 30 mA -6 -8 VOUT = 3.3V CIN = 0 IOUT = 1 mA VIN_AC = 0.5Vpk-pk 70 PSRR (dB) SHDN Outpu ut Voltage (V) 8 60 50 40 30 20 10 1 0 0.01 0 0.1 Time (1 ms/div) 8 4 6 2 5 VOUT 0 4 2 -2 3 -4 2 VR = 5V IOUT = 30 mA -6 -8 VOUT = 5V CIN = 0 IOUT = 1 mA VIN_AC = 0.5Vpk-pk 70 60 50 40 30 20 10 1 0 0.01 0 0.1 Time (1 ms/div) FIGURE 2-44: FIGURE 2-47: SHDN Response. 15 18 5 12 VOUT 0 9 -5 6 VR = 12V IOUT = 30 mA -15 3 0 SHDN Response. 2009-2013 Microchip Technology Inc. 100 VOUT = 12V CIN = 0 IOUT = 1 mA VIN_AC = 0.5Vpk-pk 70 60 50 40 30 20 10 0 0.01 Time (1 ms/div) FIGURE 2-45: 10 PSRR 5.0V @ 1 mA. 80 PSRR (dB) P 15 Outpu ut Voltage (V) SHD DN Voltage (V) 10 1 Frequency (kHz) 90 SHDN -10 100 PSRR 3.3V @ 1 mA. 80 7 SHDN 10 90 8 PSRR (dB) SHD DN Voltage (V) 6 FIGURE 2-46: SHDN Response. Outp put Voltage (V) FIGURE 2-43: 1 Frequency (kHz) FIGURE 2-48: 0.1 1 Frequency (kHz) 10 100 PSRR 12.0V @ 1 mA. DS20002200D-page 13 MCP1804 Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. 80 90 80 70 PS SRR (dB) 60 50 40 30 20 VOUT = 5V VIN = 8V 70 Groun nd Current (A) VOUT = 3.3V CIN = 0 IOUT = 30 mA VIN_AC = 0.5Vpk-pk 60 50 40 30 10 0 0.01 20 0.1 1 Frequency (kHz) FIGURE 2-49: 10 0 100 PSRR 3.3V @ 30 mA. FIGURE 2-52: Current. 50 75 100 Output Current (mA) 125 150 Ground Current vs. Output 80 VOUT = 5V CIN = 0 IOUT = 30 mA VIN_AC = 0.5Vpk-pk 80 70 60 50 40 30 20 Grou und Current (A) 90 PSRR (dB) P 25 VOUT = 12V VIN = 15V 70 60 50 40 30 10 0 0.01 20 0.1 FIGURE 2-50: 1 Frequency (kHz) 10 0 100 FIGURE 2-53: Current. PSRR 5.0V @ 30 mA. 50 75 100 Output Current (mA) 125 150 Ground Current vs. Output 100 90 VOUT = 12V CIN = 0 IOUT = 30 mA VIN_AC = 0.5Vp-p 70 VOUT = 15V VIN = 18V 90 Groun nd Current (A) 80 PSRR (dB) 25 60 50 40 30 20 80 70 60 50 40 10 0 0.01 30 0.1 FIGURE 2-51: DS20002200D-page 14 1 Frequency (kHz) 10 PSRR 12V @ 30 mA. 100 0 25 50 75 100 125 150 Output Current (mA) FIGURE 2-54: Current. Ground Current vs. Output 2009-2013 Microchip Technology Inc. MCP1804 Note: Unless otherwise indicated: COUT = 1 F Ceramic (X7R), CIN = 1 F Ceramic (X7R), TA = +25C, VIN = VR + 2.0V. Output Noise (V/Hz) 10.00 VR = 3.3V VIN = 5.0V IOUT = 50 mA 1.00 0.10 0.01 0.01 FIGURE 2-55: 0.1 1 Frequency (kHz) 10 100 Output Noise vs. Frequency. 2009-2013 Microchip Technology Inc. DS20002200D-page 15 MCP1804 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. . TABLE 3-1: MCP1804 PIN FUNCTION TABLE MCP1804 SOT-23-5 3.1 SOT-89-5 SOT-89-3 Symbol SOT-223-3 1 5 3 3 VIN 2 2, TAB 2, TAB 2, TAB GND Description Unregulated Supply Voltage Ground Terminal 3 4 -- -- NC 4 3 -- -- SHDN Shutdown 5 1 1 1 VOUT Regulated Voltage Output Unregulated Input Voltage (VIN) 3.4 No connection Regulated Output Voltage (VOUT) Connect VIN to the input unregulated source voltage. Like all low dropout linear regulators, low source impedance is necessary for the stable operation of the LDO. The amount of capacitance required to ensure low source impedance will depend on the proximity of the input source capacitors or battery type. For most applications, 0.1 F to 1.0 F of capacitance will ensure stable operation of the LDO circuit. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low ESR characteristics of the ceramic will yield better noise and PSRR performance at high frequency. Connect VOUT to the positive side of the load and the positive terminal of the output capacitor. The positive side of the output capacitor should be physically located as close to the LDO VOUT pin as is practical. The current flowing out of this pin is equal to the DC load current. For most applications, 0.1 F to 1.0 F of capacitance will ensure stable operation of the LDO circuit. Larger values may be used to improve dynamic load response. The type of capacitor used can be ceramic, tantalum or aluminum electrolytic. The low ESR characteristics of the ceramic will yield better noise and PSRR performance at high frequency. 3.2 3.5 Ground Terminal (GND) Regulator ground. Tie GND to the negative side of the output and the negative side of the input capacitor. Only the LDO bias current (50 to 60 A typical) flows out of this pin; there is no high current. The LDO output regulation is referenced to this pin. Minimize voltage drops between this pin and the negative side of the load. 3.3 No Connect (NC) No internal connection. The pins marked NC are true "No Connect" pins. Shutdown Input (SHDN) The SHDN input is used to turn the LDO output voltage on and off. When the SHDN input is at a logic-high level, the LDO output voltage is enabled. When the SHDN input is pulled to a logic-low level, the LDO output voltage is disabled and the LDO enters a low quiescent current shutdown state where the typical quiescent current is 0.01 A. The SHDN pin does not have an internal pull-up or pull-down resistor. The SHDN pin must be connected to either VIN or GND to prevent the device from becoming unstable. DS20002200D-page 16 2009-2013 Microchip Technology Inc. MCP1804 4.0 DETAILED DESCRIPTION 4.1 Output Regulation A portion of the LDO output voltage is fed back to the internal error amplifier and compared with the precision internal bandgap reference. The error amplifier output will adjust the amount of current that flows through the P-Channel pass transistor, thus regulating the output voltage to the desired value. Any changes in input voltage or output current will cause the error amplifier to respond and adjust the output voltage to the target voltage (refer to Figure 4-1). 4.2 Overcurrent The MCP1804 internal circuitry monitors the amount of current flowing through the P-Channel pass transistor. In the event that the load current reaches the current limiter level of 200 mA (typical), the current limiter circuit will operate and the output voltage will drop. As the output voltage drops, the internal current foldback circuit will further reduce the output voltage causing the output current to decrease. When the output is shorted, a typical output current of 50 mA flows. 4.3 Shutdown The SHDN input is used to turn the LDO output voltage on and off. When the SHDN input is at a logic-high level, the LDO output voltage is enabled. When the SHDN input is pulled to a logic-low level, the LDO output voltage is disabled and the LDO enters a low quiescent current shutdown state where the typical quiescent current is 0.01 A. The SHDN pin does not have an internal pull-up or pull-down resistor. Therefore the SHDN pin must be pulled either high or low to prevent the device from becoming unstable. The internal device current will increase when the device is operational and current flows through the pull-up or pull-down resistor to the SHDN pin internal logic. The SHDN pin internal logic is equivalent to an inverter input. 4.4 Output Capacitor The MCP1804 requires a minimum output capacitance of 0.1 F to 1.0 F for output voltage stability. Ceramic capacitors are recommended because of their size, cost and environmental robustness qualities. Aluminum-electrolytic and tantalum capacitors can be used on the LDO output as well. The output capacitor should be located as close to the LDO output as is practical. Ceramic materials X7R and X5R have low temperature coefficients. Larger LDO output capacitors can be used with the MCP1804 to improve dynamic performance and power supply ripple rejection performance. Aluminumelectrolytic capacitors are not recommended for low temperature applications of < -25C. 4.5 Input Capacitor Low input source impedance is necessary for the LDO output to operate properly. When operating from batteries or in applications with long lead length (> 10 inches) between the input source and the LDO, some input capacitance is recommended. A minimum of 0.1 F to 1.0 F is recommended for most applications. For applications that have output step load requirements, the input capacitance of the LDO is very important. The input capacitance provides the LDO with a good local low-impedance source to pull the transient currents from in order to respond quickly to the output load step. For good step response performance, the input capacitor should be of equivalent or higher value than the output capacitor. The capacitor should be placed as close to the input of the LDO as is practical. Larger input capacitors will also help reduce any high-frequency noise on the input and output of the LDO and reduce the effects of any inductance that exists between the input source voltage and the input capacitance of the LDO. 4.6 Thermal Shutdown The MCP1804 thermal shutdown circuitry protects the device when the internal junction temperature reaches the typical thermal limit value of +150C. The thermal limit shuts off the output drive transistor. Device output will resume when the internal junction temperature falls below the thermal limit value by an amount equal to the thermal limit hysteresis value of +25C. 2009-2013 Microchip Technology Inc. DS20002200D-page 17 MCP1804 VOUT VIN * Thermal Protection SHDN Shutdown Control Voltage Reference + Current Limiter Error Amplifier *5-Pin Versions Only FIGURE 4-1: DS20002200D-page 18 GND Block Diagram. 2009-2013 Microchip Technology Inc. MCP1804 5.0 FUNCTIONAL DESCRIPTION The MCP1804 CMOS linear regulator is intended for applications that need low current consumption while maintaining output voltage regulation. The operating continuous load of the MCP1804 ranges from 0 mA to 150 mA. The input operating voltage ranges from 2.0V to 28.0V, making it capable of operating from a single 12V battery or single and multiple Li-Ion cell batteries. 5.1 Input The input of the MCP1804 is connected to the source of the P-Channel PMOS pass transistor. As with all LDO circuits, a relatively low source impedance (< 10) is needed to prevent the input impedance from causing the LDO to become unstable. The size and type of the capacitor needed depend heavily on the input source type (battery, power supply) and the output current range of the application. For most applications, a 0.1 F ceramic capacitor will be sufficient to ensure circuit stability. Larger values can be used to improve circuit AC performance. 5.2 Output The maximum rated continuous output current for the MCP1804 is 150 mA. A minimum output capacitance of 0.1 F to 1.0 F is required for small signal stability in applications that have up to 150 mA output current capability. The capacitor type can be ceramic, tantalum or aluminum electrolytic. 2009-2013 Microchip Technology Inc. DS20002200D-page 19 MCP1804 NOTES: DS20002200D-page 20 2009-2013 Microchip Technology Inc. MCP1804 6.0 APPLICATION CIRCUITS AND ISSUES 6.1 The MCP1804 is most commonly used as a voltage regulator. Its low quiescent current and wide input voltage make it ideal for Li-Ion and 12V batterypowered applications. VOUT IOUT 50 mA NC GND VIN COUT 1 F Ceramic FIGURE 6-1: 6.1.1 MCP1804 VOUT 1.8V VIN 4.2V CIN 1 F Ceramic TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total power dissipation of the device RJA = Thermal resistance from junction to ambient TA(MAX) = Maximum ambient temperature The maximum power dissipation capability for a package can be calculated given the junctionto-ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION 6-3: T J MAX - T A MAX P D MAX = --------------------------------------------------R JA Typical Application Circuit. APPLICATION INPUT CONDITIONS Package Type = SOT-23 Input Voltage Range = 3.8V to 4.2V VIN maximum = 4.6V VOUT typical = 1.8V IOUT = 50 mA maximum 6.2 T J MAX = PTOTAL R JA + T A MAX Where: Typical Application SHDN EQUATION 6-2: Where: PD(MAX) = Maximum power dissipation of the device TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature RJA = Thermal resistance from junction to ambient Power Calculations 6.2.1 POWER DISSIPATION The internal power dissipation of the MCP1804 is a function of input voltage, output voltage and output current. The power dissipation resulting from the quiescent current draw is so low it is insignificant (50.0 A x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION 6-1: P LDO = VIN MAX - V OUT MIN I OUT Where: PLDO = Internal power dissipation of the LDO Pass device VIN(MAX) = Maximum input voltage VOUT(MIN) = Minimum output voltage of the LDO The maximum continuous operating temperature specified for the MCP1804 is +85C. To estimate the internal junction temperature of the MCP1804, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (RJA). The thermal resistance from junction to ambient for the SOT-23 pin package is estimated at 256C/W. 2009-2013 Microchip Technology Inc. EQUATION 6-4: T J RISE = P D MAX R JA Where: TJ(RISE) = Rise in the device's junction temperature over the ambient temperature PD(MAX) = Maximum power dissipation of the device RJA = Thermal resistance from junction to ambient EQUATION 6-5: T J = T J RISE + T A Where: TJ = Junction Temperature TJ(RISE) = Rise in the device's junction temperature over the ambient temperature TA = Ambient temperature DS20002200D-page 21 MCP1804 6.3 Voltage Regulator Internal power dissipation, junction temperature rise, junction temperature and maximum power dissipation are calculated in the following example. The power dissipation resulting from ground current is small enough to be neglected. 6.3.1 POWER DISSIPATION EXAMPLE TJ = TJ(RISE) + TA(MAX) TJ = 76.3C Maximum Package Power Dissipation at +25C Ambient Temperature (minimum PCB footprint) SOT-23 (256C/Watt = RJA): PD(MAX) = (125C - 25C) / 256C/W Package: Package Type = SOT-23 Input Voltage: PD(MAX) = 390 milli-Watts SOT-89 (180C/Watt = RJA): PD(MAX) = (125C - 25C) / 180C/W VIN = 3.8V to 4.6V PD(MAX) = 555 milli-Watts LDO Output Voltages and Currents: VOUT = 1.8V IOUT = 50 mA Maximum Ambient Temperature: TA(MAX) = +40C Internal Power Dissipation: Internal Power dissipation is the product of the LDO output current times the voltage across the LDO (VIN to VOUT). PLDO(MAX) = (VIN(MAX) - VOUT(MIN)) x IOUT(MAX) PLDO(MAX) = (4.6V - (0.98 x 1.8V)) x 50 mA PLDO(MAX) = 141.8 milli-Watts 6.3.1.1 Voltage Reference The MCP1804 can be used not only as a regulator, but also as a low quiescent current voltage reference. In many microcontroller applications, the initial accuracy of the reference can be calibrated using production test equipment or by using a ratio measurement. When the initial accuracy is calibrated, the thermal stability and line regulation tolerance are the only errors introduced by the MCP1804 LDO. The low-cost, low quiescent current and small ceramic output capacitor are all advantages when using the MCP1804 as a voltage reference. Device Junction Temperature Rise The internal junction temperature rise is a function of internal power dissipation and the thermal resistance from junction to ambient for the application. The thermal resistance from junction to ambient (RJA) is derived from an EIA/JEDEC standard for measuring thermal resistance for small surface mount packages. The EIA/ JEDEC specification is JESD51-7, "High Effective Thermal Conductivity Test Board for Leaded Surface Mount Packages". The standard describes the test method and board specifications for measuring the thermal resistance from junction to ambient. The actual thermal resistance for a particular application can vary depending on many factors, such as copper area and thickness. Refer to AN792, "A Method to Determine How Much Power a SOT23 Can Dissipate in an Application" (DS00792), for more information regarding this subject. TJ(RISE) = PTOTAL x RJA TJ(RISE) = 141.8 milli-Watts x 256.0C/Watt TJ(RISE) = 36.3C 6.3.1.2 6.4 Junction Temperature Estimate To estimate the internal junction temperature, the calculated temperature rise is added to the ambient or offset temperature. For this example, the worst-case junction temperature is estimated below. DS20002200D-page 22 Ratio Metric Reference MCP1804 50 A Bias CIN 1 F VIN VOUT GND PICmicro(R) Microcontroller COUT 1 F VREF AD0 AD1 Bridge Sensor FIGURE 6-2: Using the MCP1804 as a Voltage Reference. 6.5 Pulsed Load Applications For some applications, there are pulsed load current events that may exceed the specified 150 mA maximum specification of the MCP1804. The internal current limit of the MCP1804 will prevent high peak load demands from causing non-recoverable damage. The 150 mA rating is a maximum average continuous rating. As long as the average current does not exceed 150 mA or the maximum power dissipation of the packaged device, pulsed higher load currents can be applied to the MCP1804. The typical current limit for the MCP1804 is 200 mA (TA = +25C). 2009-2013 Microchip Technology Inc. MCP1804 7.0 PACKAGING INFORMATION 7.1 Package Marking Information 3-Lead SOT-223 Example Part Number Code MCP1804T-1802I/DB 84KXX MCP1804T-2502I/DB 84TXX MCP1804T-3002I/DB 84ZXX MCP1804T-3302I/DB 852XX MCP1804T-5002I/DB 85MXX MCP1804T-A002I/DB 879XX MCP1804T-C002I/DB 87ZXX 3-Lead SOT-89 Example Part Number Code MCP1804T-1802I/MB 84KXX MCP1804T-2502I/MB 84TXX MCP1804T-3002I/MB 84ZXX MCP1804T-3302I/MB 852XX MCP1804T-5002I/MB 85MXX MCP1804T-A002I/MB 879XX MCP1804T-C002I/MB 87ZXX 5-Lead SOT-23 84K 25 Example Legend: XX...X Y YY WW NNN e3 * Note: 84K25 Part Number Code MCP1804T-1802I/OT 80KXX MCP1804T-2502I/OT 80TXX MCP1804T-3002I/OT 80ZXX MCP1804T-3302I/OT 812XX MCP1804T-5002I/OT 81MXX MCP1804T-A002I/OT 839XX MCP1804T-C002I/OT 83ZXX 80K25 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week `01') Alphanumeric traceability code Pb-free JEDEC(R) designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2009-2013 Microchip Technology Inc. DS20002200D-page 23 MCP1804 5-Lead SOT-89 DS20002200D-page 24 Example Part Number Code MCP1804T-1802I/MT 80KXX MCP1804T-2502I/MT 80TXX MCP1804T-3002I/MT 80ZXX MCP1804T-3302I/MT 812XX MCP1804T-5002I/MT 81MXX MCP1804T-A002I/MT 839XX MCP1804T-C002I/MT 83ZXX 80K 25 2009-2013 Microchip Technology Inc. MCP1804 . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / D b2 E1 E 3 2 1 e e1 A2 A b c L A1 3# 4# 5$8 %4! 44" " 5 56 7 5 4!1# )* 6$# !4!1# 6, : # ; ; < #! %% ; !!1/: # ( 9 6, =!# " 9 !!1/=!# " ( 6, 4# 9 9( 9 4! ( 8 9 9 < / 4!=!# 84!=!# 9)* 8 #4# 4 ( ; ; 4! > ; > . !"! #$! !% # $ !% # $ !# "'( )*+ ) #&#,$ --# $## #&! ! 2009-2013 Microchip Technology Inc. - *) DS20002200D-page 25 MCP1804 . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / DS20002200D-page 26 2009-2013 Microchip Technology Inc. MCP1804 !"# . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / D D1 E H L 1 N 2 b b1 b1 e E1 e1 A C 3# 4# 5$8 %4! 44" " 5 5 7 1# ()* 6$# !4!1# )* 6, : # 9 6, =!# : ( !!1/=!# #) " 9 !!1/=!# # " 6, 4# 84# . #4# 4! / 4!=!# 9 < 4 ( 8 (9 4! ?=!# 8 9 < !"! #$! !% # $ !% # $ #&! ! !# "'( )*+ ) #&#,$ --# $## 2009-2013 Microchip Technology Inc. - *) DS20002200D-page 27 MCP1804 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002200D-page 28 2009-2013 Microchip Technology Inc. MCP1804 $ . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / b N E E1 3 2 1 e e1 D A2 A c A1 L L1 3# 4# 5$8 %1 44" " 5 56 7 5 ( 4!1# ()* 6$# !4!1# 6, : # ; < ; ; ( 6, =!# " ; !!1/=!# " ; < 6, 4# ; !!1/ / #! %% )* ( . #4# 4 ; 9 . # # 4 ( ; < . # > ; > < ; 9 4! / 4!=!# 8 ; ( !"! #$! !% # $ !% # $ #&! ! !# "'( )*+ ) #&#,$ --# $## 2009-2013 Microchip Technology Inc. - *) DS20002200D-page 29 MCP1804 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002200D-page 30 2009-2013 Microchip Technology Inc. MCP1804 $ !"# . # #$ # /! - 0 # 1/ %# #!# ## +22--- 2 / D1 b2 b1 b1 N L L 1 2 b b1 b1 e e1 H E D A C 3# 4# 5$8 %4! 44" " 5 5 7 ( 4!1# ()* 6$# !4!1# )* 6, : # 9 6, =!# : ( !!1/=!# " 9 6, 4# 9 8=!# . #4# 4! / 4!=!# 4! 00?(=!# 84!=!# < 4 < ( 8 (9 8 9 < 8 < !"! #$! !% # $ !% # $ !# "'( )*+ ) #&#,$ --# $## #&! ! 2009-2013 Microchip Technology Inc. - *) DS20002200D-page 31 MCP1804 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20002200D-page 32 2009-2013 Microchip Technology Inc. MCP1804 APPENDIX A: REVISION HISTORY Revision D (October 2013) The following is the list of modifications: 1. 2. 3. 4. Added operating junction temperature range in Temperature Specifications. Updated the maximum package power dissipation values in Section 6.3.1.2, Junction Temperature Estimate. Updated package specification drawings to reflect all view. Minor typographical changes. Revision C (June 2011) The following is the list of modifications: 5. 6. 7. 8. Added seven new characterization graphs to Section 2.0, Typical Performance Curves (Figures 2-49 - 2-55). Changed layout of Table 3-1. Added separate column for SOT-223-3. Updated Package Marking drawings and examples in the Packaging Information section. Added new voltage option to Product Identification System table. Revision B (November 2009) The following is the list of modifications: * Electrical characteristics, SHDN "H" Voltage item: Changed to SHDN "L" Voltage. Revision A (September 2009) * Original Release of this Document. 2009-2013 Microchip Technology Inc. DS20002200D-page 33 MCP1804 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. T -XX XX X /XX Device Tape and Reel Voltage Output Voltage Tolerance Temperature Range Package Device: MCP1804T: Voltage Options: 18 25 30 33 50 A0 C0 J0 = = = = = = = = 1.8V 2.5V 3.0V 3.3V 5.0V 10V 12V 18V Output Voltage Tolerance: 02 = 2% Temperature Range: I Package: DB MB MT OT DS20002200D-page 34 LDO Voltage Regulator (Tape and Reel) = -40C to +85C (Industrial) = = = = 3-lead Plastic Small Outline Transistor (SOT-223) 3-lead Plastic Small Outline Transistor (SOT-89) 5-lead Plastic Small Outline Transistor (SOT-89) 5-lead Plastic Small Outline Transistor (SOT-23) Examples: a) b) c) d) e) f) g) MCP1804T-1802I/OT: MCP1804T-2502I/OT: MCP1804T-3002I/OT: MCP1804T-3302I/OT: MCP1804T-5002I/OT: MCP1804T-A002I/OT: MCP1804T-C002I/OT: 1.8V, 5-LD SOT-23 2.5V, 5-LD SOT-23 3.0V, 5-LD SOT-23 3.3V, 5-LD SOT-23 5.0V, 5-LD SOT-23 10V, 5-LD SOT-23 12V, 5-LD SOT-23 a) b) c) d) e) f) g) MCP1804T-1802I/MB: MCP1804T-2502I/MB: MCP1804T-3002I/MB: MCP1804T-3302I/MB: MCP1804T-5002I/MB: MCP1804T-A002I/MB: MCP1804T-C002I/MB: 1.8V, 3-LD SOT-89 2.5V, 3-LD SOT-89 3.0V, 3-LD SOT-89 3.3V, 3-LD SOT-89 5.0V, 3-LD SOT-89 10V, 3-LD SOT-89 12V, 3-LD SOT-89 a) b) c) d) e) f) g) MCP1804T-1802I/MT: MCP1804T-2502I/MT: MCP1804T-3002I/MT: MCP1804T-3302I/MT: MCP1804T-5002I/MT: MCP1804T-A002I/MT: MCP1804T-C002I/MT: 1.8V, 5-LD SOT-89 2.5V, 5-LD SOT-89 3.0V, 5-LD SOT-89 3.3V, 5-LD SOT-89 5.0V, 5-LD SOT-89 10V, 5-LD SOT-89 12V, 5-LD SOT-89 a) b) c) d) e) f) g) MCP1804T-1802I/DB: MCP1804T-2502I/DB: MCP1804T-3002I/DB: MCP1804T-3302I/DB: MCP1804T-5002I/DB: MCP1804T-A002I/DB: MCP1804T-C002I/DB: 1.8V, 3-LD SOT-223 2.5V, 3-LD SOT-223 3.0V, 3-LD SOT-223 3.3V, 3-LD SOT-223 5.0V, 3-LD SOT-223 10V, 3-LD SOT-223 12V, 3-LD SOT-223 2009-2013 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." 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Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. (c) 2009-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62077-590-5 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2009-2013 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. DS20002200D-page 35 Worldwide Sales and Service AMERICAS ASIA/PACIFIC ASIA/PACIFIC EUROPE Corporate Office 2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: http://www.microchip.com/ support Web Address: www.microchip.com Asia Pacific Office Suites 3707-14, 37th Floor Tower 6, The Gateway Harbour City, Kowloon Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431 India - Bangalore Tel: 91-80-3090-4444 Fax: 91-80-3090-4123 Austria - Wels Tel: 43-7242-2244-39 Fax: 43-7242-2244-393 Denmark - Copenhagen Tel: 45-4450-2828 Fax: 45-4485-2829 Atlanta Duluth, GA Tel: 678-957-9614 Fax: 678-957-1455 Boston Westborough, MA Tel: 774-760-0087 Fax: 774-760-0088 Chicago Itasca, IL Tel: 630-285-0071 Fax: 630-285-0075 Cleveland Independence, OH Tel: 216-447-0464 Fax: 216-447-0643 Dallas Addison, TX Tel: 972-818-7423 Fax: 972-818-2924 Detroit Farmington Hills, MI Tel: 248-538-2250 Fax: 248-538-2260 Indianapolis Noblesville, IN Tel: 317-773-8323 Fax: 317-773-5453 Los Angeles Mission Viejo, CA Tel: 949-462-9523 Fax: 949-462-9608 Santa Clara Santa Clara, CA Tel: 408-961-6444 Fax: 408-961-6445 Toronto Mississauga, Ontario, Canada Tel: 905-673-0699 Fax: 905-673-6509 Australia - Sydney Tel: 61-2-9868-6733 Fax: 61-2-9868-6755 China - Beijing Tel: 86-10-8569-7000 Fax: 86-10-8528-2104 China - Chengdu Tel: 86-28-8665-5511 Fax: 86-28-8665-7889 China - Chongqing Tel: 86-23-8980-9588 Fax: 86-23-8980-9500 China - Hangzhou Tel: 86-571-2819-3187 Fax: 86-571-2819-3189 China - Hong Kong SAR Tel: 852-2943-5100 Fax: 852-2401-3431 China - Nanjing Tel: 86-25-8473-2460 Fax: 86-25-8473-2470 China - Qingdao Tel: 86-532-8502-7355 Fax: 86-532-8502-7205 China - Shanghai Tel: 86-21-5407-5533 Fax: 86-21-5407-5066 China - Shenyang Tel: 86-24-2334-2829 Fax: 86-24-2334-2393 China - Shenzhen Tel: 86-755-8864-2200 Fax: 86-755-8203-1760 China - Wuhan Tel: 86-27-5980-5300 Fax: 86-27-5980-5118 China - Xian Tel: 86-29-8833-7252 Fax: 86-29-8833-7256 France - Paris Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79 India - Pune Tel: 91-20-3019-1500 Japan - Osaka Tel: 81-6-6152-7160 Fax: 81-6-6152-9310 Germany - Munich Tel: 49-89-627-144-0 Fax: 49-89-627-144-44 Japan - Tokyo Tel: 81-3-6880- 3770 Fax: 81-3-6880-3771 Italy - Milan Tel: 39-0331-742611 Fax: 39-0331-466781 Korea - Daegu Tel: 82-53-744-4301 Fax: 82-53-744-4302 Netherlands - Drunen Tel: 31-416-690399 Fax: 31-416-690340 Korea - Seoul Tel: 82-2-554-7200 Fax: 82-2-558-5932 or 82-2-558-5934 Spain - Madrid Tel: 34-91-708-08-90 Fax: 34-91-708-08-91 Malaysia - Kuala Lumpur Tel: 60-3-6201-9857 Fax: 60-3-6201-9859 UK - Wokingham Tel: 44-118-921-5869 Fax: 44-118-921-5820 Malaysia - Penang Tel: 60-4-227-8870 Fax: 60-4-227-4068 Philippines - Manila Tel: 63-2-634-9065 Fax: 63-2-634-9069 Singapore Tel: 65-6334-8870 Fax: 65-6334-8850 Taiwan - Hsin Chu Tel: 886-3-5778-366 Fax: 886-3-5770-955 Taiwan - Kaohsiung Tel: 886-7-213-7828 Fax: 886-7-330-9305 Taiwan - Taipei Tel: 886-2-2508-8600 Fax: 886-2-2508-0102 Thailand - Bangkok Tel: 66-2-694-1351 Fax: 66-2-694-1350 China - Xiamen Tel: 86-592-2388138 Fax: 86-592-2388130 China - Zhuhai Tel: 86-756-3210040 Fax: 86-756-3210049 DS20002200D-page 36 India - New Delhi Tel: 91-11-4160-8631 Fax: 91-11-4160-8632 08/20/13 2009-2013 Microchip Technology Inc.