MICROWAVE POWER GaAs FET TIM1213-2L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER n BROAD BAND INTERNALLY MATCHED P1dB=33.5dBm at 12.7GHz to 13.2GHz n HIGH GAIN n HERMETICALLY SEALED PACKAGE G1dB=7.5dB at 12.7GHz to 13.2GHz RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G CONDITION UNIT dBm MIN. 32.5 dB 6.5 7.5 A dB % dBc -42 0.85 1.1 0.8 VDS= 9V f= 12.7 to 13.2GHz add TYP. MAX. 33.5 24 -45 IM3 Two-Tone Test Po=22.0 dBm IDS2 (Single Carrier Level) A 0.85 1.1 Tch (VDS x IDS + Pin - P1dB) C 60 UNIT mS MIN. MAX. TYP. 600 V -2.0 -3.5 -5.0 A 2.0 V -5 C/W 5.0 6.0 x Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS ( Ta= 25C ) CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITION VDS= 3V IDS= 1.0A VDS= 3V IDS= 30mA VDS= 3V VGS= 0V IGS= -30A Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL gm VGSoff u The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Sep. 2006 TIM1213-2L ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 2.6 Total Power Dissipation (Tc= 25 C) PT W 25 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (2-9D1B) 4-R2.4 2.0MIN. Unit: mm (1) (1) Gate (2) Source (2) (3) Drain 2.0MIN 0.50.15 1.80.3 0.2MAX 8.5 MAX. 3.2MAX +0.1 0.1 -0.05 13.00.3 17.0 MAX. 1.20.3 (3) 9.70.3 2.50.3 (2) HANDLING PRECAUTIONS FOR PACKAGED TYPE Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1213-2L RF PERFORMANCES Output Power (Pout) vs. Frequency VDS=9V IDS0.85A Pout(dBm) Pin=26.0dBm 34 33 32 31 12.7 12.95 13.2 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 37 freq.=13.2GHz 36 VDS=9V IDS0.85A 35 70 Pout 60 33 50 32 40 add 31 30 30 20 29 10 28 0 20 22 24 26 Pin(dBm) 3 28 30 add(%) Pout(dBm) 34 TIM1213-2L Power Dissipation(PT) vs. Case Temperature(Tc) 20 15 10 0 0 40 80 120 200 160 Tc( C ) IM3 vs. OUTPUT POWER CHARACTERISTICS -10 VDS= 9 V f= 13.2GHz f= 5MHz -20 IM3(dBc) PT(W) 25 -30 -40 -50 -60 17 19 21 23 Po(dBm), Single Carrier Level 4 25 27