V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
@T
A
=
75 C
SB270 thru SB2100
FEATURES
M etal-S e miconductor ju n c t ion with guard ring
Epitaxial construction
Low forward voltage drop
High current capability
The plastic material carries UL recognition 94V-0
For use in low v oltage,high frequency inverters,free
w h ee ling,a nd po lar ity protection ap plicat ion s
MECHANICAL DATA
Case : JEDEC DO-15 molded plastic
Polarity : Color band denotes cathode
Weight : 0.015 ounces, 0.4 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERIST I CS
Ratings at 25
℃
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SB270
70
49
70
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super im posed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 2.0A DC
2.0
60
0.79
Typical Thermal Resistance (Note 1)
R
0JC
10
C/W
I
R
@T
J
=100 C
Maximum DC Rev e rse Cu rrent
at Rated DC Blocking Voltage
@T
J
=25 C 0.5
10
mA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
0.69
SB280
80
56
80
SB290
90
63
90
SB2100
100
70
100
SCHOTT KY BA RRIER RECTIFIERS
REVERSE VOL TAGE
- 70
to
100
Volts
FOR WARD CURRENT
- 2.0
Amperes
NOTES : 1.Thermal Resistance Junction to Case.
2. Thermal Resistance Junction to Ambient.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
C
J
Typical Junction
Capacitance (Note 3)
250
pF
@T
J
=100 C
@T
J
=25 C
SEMICONDUCTOR
LITE-ON
All Dimensions in millimeter
Max.
Min.
DO-15
Dim.
A
D
C
B 25.4 7.60
-
5.80
0.71
2.60 3.60
0.86
DO-15
A
C
D
A
B
Typical Thermal Resistance (Note 2)
R
0JA
20
C/W
REV. 7, Apr-2005, KDHD02
RATING A ND CHARACTERISTIC CURVES
SB270 thru SB 2100
FIG.1 - FORWARD CURRENT DERATING CURVE
AV ERAGE FORWAR D CUR RENT
AMPERES
25
75 100 125 150
1.5
0 50
0.5
2.5
175
SINGLE PHASE HALF WAVE 60H z
RESI S TI V E OR INDUCT I V E LOA D
AMBIENT TEMPERATURE , C
2.0
1.0
IN STANTANEOUS F O RWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT ,(A)
0.2 0.4
0
0.1
1.0
0.6 0.8
TJ= 25 C
PULSE WIDTH 300us
10
FIG.3 - TYPIC AL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , VOLTS
10
1100
1000
100
10 4
T
J
= 25 C, f= 1MHz
0.1
1.0
10
0.01
PERCENT OF RATE D PE A K RE VERSE VOLTAG E (% )
20 40 120 140
060 80 100
TJ= 25 C
0.001
IN STANTANEOUS REVERSE CUR RENT ,(mA)
TJ= 75 C
TJ= 100 C
FIG.5 - TYPICAL REVERSE CHARACT ERISTICS
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PE AK F O R WARD SURG E CURR ENT ,
AMPERES
1 5 10 50 100220
0
20
40
60
80
Pul se width 8.3ms
Single Half -Sin e-Wave
REV. 7, Apr-2005, KDHD02
