1
Motorola Thyristor Device Data
Silicon Bidirectional Switches
Diode Thyristors
. . . designed for full-wave triggering in Triac phase control circuits, half-wave SCR
triggering application and as voltage level detectors. Supplied in an inexpensive
plastic TO-226AA package for high-volume requirements, this low-cost plastic
package is readily adaptable for use in automatic insertion equipment.
Low Switching Voltage — 8 Volts Typical
Uniform Characteristics in Each Direction
Low On-State Voltage — 1.7 Volts Maximum
Low Off-State Current — 0.1 µA Maximum
Low Temperature Coef ficient — 0.02 %/ °C Typical
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating Symbol Value Unit
Power Dissipation PD500 mW
DC Forward Current IF200 mA
DC Gate Current (Off-State Only) IG(off) 5 mA
Repetitive Peak Forward Current
(1% Duty Cycle, 10 µs Pulse Width, TA = 100°C) IFM(rep) 2 Amps
Non-repetitive Forward Current
(10 µs Pulse Width, TA = 25°C) IFM(nonrep) 6 Amps
Operating Junction Temperature Range TJ–55 to +125 °C
Storage Temperature Range Tstg –65 to +150 °C
Order this document
by MBS4991/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1995
MBS4991
MBS4992
MBS4993
CASE 29-04
(TO-226AA)
STYLE 12
SBS
(PLASTIC)
MT2
G
MT1
MT1GMT2
REV 2
MBS4991 MBS4992 MBS4993
2Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Switching Voltage MBS4991
MBS4992, MBS4993 VS6
7.5 8
810
9Vdc
Switching Current MBS4991
MBS4992
MBS4993
IS
175
90
175
500
120
250
µAdc
Switching Voltage Differential (See Figure 10) MBS4991
MBS4992, MBS4993
ȧ
VS1–VS2
ȧ
0.3
0.1 0.5
0.2 Vdc
Gate Trigger Current MBS4992
(VF = 5 Vdc, RL = 1 k ohm) MBS4993 IGF
100
500 µAdc
Holding Current MBS4991
MBS4992
MBS4993
IH
0.7
0.2
0.3
1.5
0.5
0.75
mAdc
Off-State Blocking Current
(VF = 5 Vdc, TA = 25°C) MBS4991
(VF = 5 Vdc, TA = 85°C) MBS4991
(VF = 5 Vdc, TA = 25°C) MBS4992, MBS4993
(VF = 5 Vdc, TA = 100°C) MBS4992, MBS4993
IB
0.08
2
0.08
6
1
10
0.1
10
µAdc
Forward On-State Voltage
(IF = 175 mAdc) MBS4991
(IF = 200 mAdc) MBS4992, MBS4993
VF
1.4
1.5 1.7
1.7
Vdc
Peak Output Voltage (Cc = 0.1 µF, RL = 20 ohms, (Figure 7) Vo3.5 4.8 Vdc
Turn-On Time (Figure 8) ton 1 µs
Turn-Off Time (Figure 9) toff 30 µs
Temperature Coefficient of Switching Voltage (–50 to +125°C) TC +0.02 %/°C
Switching Current Differential (See Figure 10) IS1–IS2 100 µA
TA, AMBIENT TEMPERATURE (°C)
0
0.96
0.98
0.99
1.00
1.01
1.02
1.03
1.04
0.97
+25–50
1.0
2.0
3.0
4.0
5.0
6.0
7.0
–25 0
8.0
–75 +50 +75 +100 +125
FIGURE 1 – SWITCHING VOLTAGE versus TEMPERATURE
TYPICAL ELECTRICAL CHARACTERISTICS
FIGURE 2 – SWITCHING CURRENT versus TEMPERATURE
VS, SWITCHING VOLTAGE (NORMALIZED)
IS, SWITCHING CURRENT (NORMALIZED)
TA, AMBIENT TEMPERATURE (°C)
0 +25–50 –25–75 +50 +75 +100 +125
MBS4991 MBS4992 MBS4993
3
Motorola Thyristor Device Data
15 V 0
D.U.T.
Cc
Vin
10 ms
MIN
10 K
RLV0
FIGURE 7 – PEAK OUTPUT VOLTAGE TEST CIRCUIT
0.01
VF, FORWARD ON-STATE VOLTAGE (VOLTS)
TA, AMBIENT TEMPERATURE (°C)
VF = 5.0 V
Normalized
to
25°C
TA, AMBIENT TEMPERATURE (°C)
0
FIGURE 6 PEAK OUTPUT VOLTAGE (FUNCTION OF RL AND Cc)
FIGURE 4 OFF-STATE BLOCKING CURRENT
versus TEMPERATURE
FIGURE 3 HOLDING CURRENT versus TEMPERATURE
FIGURE 5 ON-STATE VOLTAGE versus FORWARD CURRENT
7.0
TA = 25°C
0
1.0
2.0
3.0
4.0
5.0
6.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
RL = 500
10
Cc, CHARGING CAPACIT ANCE (µF)
10
1.0
0.1
0 1.0 2.0 3.0 4.0 5.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
–75 –50 –25 0 +25 +50 +75 +100 +125
10.0
1.0
0.1
0.01 –50 –25 0 +25 +50 +75 +100 +125
RL = 100
RL = 50
RL = 20
RL = 5
IH, HOLDING CURRENT (NORMALIZED)
IF, FOR WARD ON-STATE CURRENT (AMP)
Vo, PEAK OUTPUT VOLTAGE (VOL TS) IB, OFF-STATE BLOCKING CURRENT ( A)µ
MBS4991 MBS4992 MBS4993
4Motorola Thyristor Device Data
EQUIVALENT CIRCUIT
FIGURE 10 – DEVICE EQUIVALENT CIRCUIT, CHARACTERISTICS AND SYMBOLS
MT1
MT2
G
MT1
MT2
CIRCUIT SYMBOL
G
CHARACTERISTICS
–I VF2
VS2 IH2
+V–V
IS1 IH1
IS1
VS1
VF1
+I
IS2 IB1
Mercury
Relay
(N.O.)
+
5.0 V MT2
D.U.T.
MT1
C
500 100
FIGURE 9 – TURN-OFF TIME TEST CIRCUIT
VF + 0.1 (VS–VF)
+
VF
ton
VS
+12 V
Anode
Voltage
D.U.T.
0.01 µF
1.0 k
1.0 k
Mercury Relay
FIGURE 8 – TURN-ON TIME TEST CIRCUIT
CHARACTERISTICS
–I VF2
VS2 IH2
+V–V
IS1 IH1
IS1
VS1
VF1
+I
IS2 IB1
With the SBS in conduction and the relay contacts open, close the contacts to cause anode A2 to be driven negative. Decrease C until the SBS just
remains off when anode A2 becomes positive. The turn off time, toff, is the time from initial contact closure and until anode A2 voltage reaches
zero volts.
Turn-on time is measured from the time VS is achieved to the time when the anode voltage drops to within 90% of the difference between VS
and VF.
MBS4991 MBS4992 MBS4993
5
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 29-04
(TO–226AA)
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
MBS4991 MBS4992 MBS4993
6Motorola Thyristor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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MBS4991/D
*MBS4991/D*