IL766/ ILD766 VISHAY Vishay Semiconductors Optocoupler, Photodarlington Output, AC Input, Internal RBE Features * * * * * * * Internal RBE for Better Stability BVCEO > 60 V AC or Polarity Insensitive Inputs Built-In Reverse Polarity Input Protection Industry Standard DIP Package Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC A/C 1 6 B C/A 2 5 C NC 3 4 E A/C 1 8 E C/A 2 7 C A/C 3 6 C C/A 4 5 E i179039 e3 Agency Approvals * UL1577, File No. E52744 System Code H or J, Double Protection * CSA 93751 * BSI IEC60950 IEC60065 Pb Pb-free The IL766 is single channel optocouplers. The ILD766 has two isolated channels in a single DIP package. Order Information Part Remarks Applications ILD766-1 CTR > 500 @ IF = 2.0 mA, DIP-8 Designed for applications requiring detection or monitoring of AC signals. ILD766-2 CTR > 500 @ IF = 1.0 mA, DIP-8 IL766-1 CTR > 500 @ IF = 2.0 mA, DIP-6 Description IL766-2 CTR > 500 @ IF = 1.0 mA, DIP-6 IL766-1X007 CTR > 500 @ IF = 2.0 mA, SMD-6 (option 7) The IL766/ ILD766 are bidirectional input optically coupled isolators. They consist of two Gallium Arsenide infrared emitting diodes coupled to a silicon NPN photodarlington per channel. For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Each Channel Parameter Symbol Value Unit IF 60 mA Power dissipation, single channel Pdiss 200 mW Power dissipation, dual channel Pdiss 90 mW Forward continuous current Test condition Derate linearly from 25 C, single channel 2.6 mW/C Derate linearly from 25 C, dual channel 1.2 mW/C Document Number 83643 Rev. 1.4, 26-Oct-04 www.vishay.com 1 IL766/ ILD766 VISHAY Vishay Semiconductors Output Each Channel Symbol Value Unit Collector-emitter breakdown voltage Parameter Test condition BVCEO 60 V Collector-base breakdown voltage BVCBO 70 V Power dissipation Pdiss Derate linearly from 25 C 100 mW 1.33 mW/C Coupler Symbol Value Unit Isolation test voltage Parameter t = 1.0 sec. Test condition VISO 5300 VRMS Isolation resistance Tamb = 25 C RIO 1012 Tamb = 100 C RIO 1011 Total power dissipation (LED plus detector), single channel Ptot 250 mW Total power dissipation (LED plus detector), dual channel Ptot 400 mW Derate linearly from 25 C, single channel 3.3 mW/C Derate linearly from 25 C, dual channel 5.3 mW/C Creepage 7.0 mm Clearance 7.0 mm Comparative tracking index per DIN IEC 112/VDE0303, part 1 175 Storage temperature Tstg - 55 to + 150 C Operating temperature Tamb - 55 to +100 C Lead soldering time at 260 C Tsld 10 sec. Electrical Characteristics Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Test condition IF = 10 mA Forward voltage Symbol Min VF Typ. Max Unit 1.2 1.5 V Max Unit Output Symbol Min Typ. Collector-emitter breakdown voltage Parameter IC = 1.0 mA Test condition BVCEO 60 75 Collector-base breakdown voltage IC = 10 A BVCBO 60 90 Collector-emitter leakage current VCE = 10 V ICEO V V 10 100 nA Typ. Max Unit 1.0 V Coupler Parameter Saturation voltage, collector-emitter www.vishay.com 2 Test condition IF = 10 mA, IC = 10 mA Symbol VCEsat Min Document Number 83643 Rev. 1.4, 26-Oct-04 IL766/ ILD766 VISHAY Vishay Semiconductors Current Transfer Ratio Parameter Test condition DC Current Transfer Ratio VCE = 5.0 V, IF = 2.0 mA, Symbol Min CTRDC 500 Symbol Min Typ. Max Unit % Switching Characteristics Parameter Test condition Rise time, fall time VCC = 10 V, IF = 2.0 mA, RL = 100 Typ. tr , tf Max Unit s 100 Typical Characteristics (Tamb = 25 C unless otherwise specified) 200 60 IC Collector Current (mA) 180 Input Current - IF (mA) 40 20 0 -20 160 140 120 100 80 -40 60 40 20 -60 -2.0 -1.0 0 Input Voltage - VF (V) iil766_01 1.0 2.0 iil766_03 0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VCE Collector Voltage (V) iil766_03 Figure 1. Input Characteristics Figure 3. Transistor Output Current vs. Voltage 10 80 ID Dark Current (nA) IC Collector Current (mA) 100 90 70 60 50 40 30 4 3 10 10 2 10 1 20 10 0 1 0 il766_02 iil766_02 10 20 30 40 50 60 70 80 Collector Voltage (V) 90 100 Figure 2. Transistor Current vs. Voltage Document Number 83643 Rev. 1.4, 26-Oct-04 l766_04 iil766_04 0 25 50 75 100 125 Temperature (C) Figure 4. ICEO at VCE = 10 V vs. Temperature www.vishay.com 3 IL766/ ILD766 VISHAY Vishay Semiconductors 600 10 NCTRce - Normalized CTR Normalized @ I F = 10 mA TA = 25C R L = 10k 500 V CE = 5 V 400 Tfall (s) 1 300 200 .1 R L = 1k V CE = 1 V 100 0 .01 .1 1 10 I F - LED Current - mA iil766_05 1 100 10 I F - LED Current - mA iil766_08 Figure 5. Normalized CTR vs. Forward Current Figure 8. tfall vs. Forward Current 20 30 R L = 1k Trise (s) 20 Tphl (s) RL = 1k RL = 10k 10 .0 10 R L = 10k 0 10 1 iil766_06 1 iil766_09 IF - LED Current - mA Figure 6. tr vs. Forward Current 10 I F - LED Current - mA Figure 9. ton vs. Forward Current 700 600 IF F=10 KHz, RL DF=50% VO tD tR 500 Toff (s) VO R L = 10k VCC =10 V 400 300 tPLH tPHL tS VTH=1.5 V tF 200 IF =2 mA R L = 1k 100 0 1 iil766_07 iil766_10 Figure 7. Saturated Switching Characteristics MeasurementsSchematic and Waveform www.vishay.com 4 10 I F - LED Current - mA Figure 10. toff vs. Forward Current Document Number 83643 Rev. 1.4, 26-Oct-04 IL766/ ILD766 VISHAY Vishay Semiconductors 400 30 R L = 1k 300 R L = 10k Tplh (s) Ton (s) 20 R L = 10k 200 10 100 R L = 1k 0 0 1 1 10 I F - LED Current - mA iil766_11 Figure 11. tphl vs. Forward Current 10 I F - LED Current - mA iil766_12 Figure 12. tplh vs. Forward Current Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. 4 typ. .018 (0.45) .022 (0.55) .300 (7.62) typ. .048 (0.45) .022 (0.55) .130 (3.30) .150 (3.81) 18 .031 (0.80) min. .031 (0.80) .035 (0.90) .100 (2.54) typ. 3-9 .114 (2.90) .130 (3.0) .010 (.25) typ. .300-.347 (7.62-8.81) i178004 Document Number 83643 Rev. 1.4, 26-Oct-04 www.vishay.com 5 IL766/ ILD766 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) pin one ID 4 3 2 1 5 6 7 8 .255 (6.48) .268 (6.81) ISO Method A .379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .300 (7.62) typ. .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56) 10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. i178006 3-9 .008 (.20) .012 (.30) .230(5.84) .110 (2.79) .250(6.35) .130 (3.30) Option 7 .300 (7.62) TYP. .255 (6.5) .248 (6.3) .028 (0.7) MIN. .180 (4.6) .160 (4.1) .315 (8.0) MIN. .331 (8.4) MIN. .406 (10.3) MAX. www.vishay.com 6 18447 Document Number 83643 Rev. 1.4, 26-Oct-04 IL766/ ILD766 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83643 Rev. 1.4, 26-Oct-04 www.vishay.com 7