IL766-1X007 - Vishay Siliconix - Datasheet.Directory

VISHAY

IL766/ ILD766

Document Number 83643

Rev. 1.4, 26-Oct-04

Vishay Semiconductors

www.vishay.com

i179039

A/C

C/A

A/C

C/A

A/C

Pb-free

Optocoupler, Photodarlington Output, AC Input, Internal RBE

Features

• Internal RBE for Better Stability

•BV

CEO > 60 V

• AC or Polarity Insensitive Inputs

• Built-In Reverse Polarity Input Protection

• Industry Standard DIP Package

• Lead-free component

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E52744 System Code H or J,

Double Protection

• CSA 93751

• BSI IEC60950 IEC60065

Applications

Designed for applications requiring detection or mon-

itoring of AC signals.

Description

The IL766/ ILD766 are bidirectional input optically

coupled isolators. They consist of two Gallium Ars-

enide infrared emitting diodes coupled to a silicon

NPN photodarlington per channel.

The IL766 is single channel optocouplers. The

ILD766 has two isolated channels in a single DIP

package.

Order Information

For additional information on the available options refer to

Option Information.

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is

not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Each Channel

Part Remarks

ILD766-1 CTR > 500 @ IF = 2.0 mA, DIP-8

ILD766-2 CTR > 500 @ IF = 1.0 mA, DIP-8

IL766-1 CTR > 500 @ IF = 2.0 mA, DIP-6

IL766-2 CTR > 500 @ IF = 1.0 mA, DIP-6

IL766-1X007 CTR > 500 @ IF = 2.0 mA, SMD-6 (option 7)

Parameter Test condition Symbol Value Unit

Forward continuous current IF60 mA

Power dissipation, single channel Pdiss 200 mW

Power dissipation, dual channel Pdiss 90 mW

Derate linearly from 25 °C, single channel 2.6 mW/°C

Derate linearly from 25 °C, dual channel 1.2 mW/°C

www.vishay.com

Document Number 83643

Rev. 1.4, 26-Oct-04

VISHAY

IL766/ ILD766

Vishay Semiconductors

Output

Each Channel

Coupler

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Output

Coupler

Parameter Test condition Symbol Value Unit

Collector-emitter breakdown voltage BVCEO 60 V

Collector-base breakdown voltage BVCBO 70 V

Power dissipation Pdiss 100 mW

Derate linearly from 25 °C 1.33 mW/°C

Parameter Test condition Symbol Value Unit

Isolation test voltage t = 1.0 sec. VISO 5300 VRMS

Isolation resistance Tamb = 25 °C RIO ≥ 1012 Ω

Tamb = 100 °C RIO ≥ 1011 Ω

Total power dissipation (LED plus detector),

single channel

Ptot 250 mW

Total power dissipation (LED plus detector),

dual channel

Ptot 400 mW

Derate linearly from 25 °C, single channel 3.3 mW/°C

Derate linearly from 25 °C, dual channel 5.3 mW/°C

Creepage ≥ 7.0 mm

Clearance ≥ 7.0 mm

Comparative tracking index per DIN IEC

112/VDE0303, part 1

175

Storage temperature Tstg - 55 to + 150 °C

Operating temperature Tamb - 55 to +100 °C

Lead soldering time at 260 °C Tsld 10 sec.

Parameter Test condition Symbol Min Typ. Max Unit

Forward voltage IF = ± 10 mA VF1.2 1.5 V

Parameter Test condition Symbol Min Typ. Max Unit

Collector-emitter breakdown voltage IC = 1.0 mA BVCEO 60 75 V

Collector-base breakdown voltage IC = 10 µABV

CBO 60 90 V

Collector-emitter leakage current VCE = 10 V ICEO 10 100 nA

Parameter Test condition Symbol Min Typ. Max Unit

Saturation voltage, collector-emitter IF = ± 10 mA,

IC = 10 mA

VCEsat 1.0 V

VISHAY

IL766/ ILD766

Document Number 83643

Rev. 1.4, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Current Transfer Ratio

Switching Characteristics

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter Test condition Symbol Min Ty p. Max Unit

DC Current Transfer Ratio VCE = 5.0 V, IF = ± 2.0 mA, CTRDC 500 %

Parameter Test condition Symbol Min Ty p. Max Unit

Rise time, fall time VCC = 10 V, IF = ± 2.0 mA, RL = 100 Ωtr, tf100 µs

Figure 1. Input Characteristics

Figure 2. Transistor Current vs. Voltage

iil766_01

Input Voltage - V

(V)

Input Current - I

(mA)

-20

-40

-60 -2.0 -1.0 0 1.0 2.0

il766_02

Collector Current (mA)

Collector Voltage (V)

0 10 2030 40 50607080 90100

100

iil766_02

Figure 3. Transistor Output Current vs. Voltage

Figure 4. ICEO at VCE = 10 V vs. Temperature

iil766_03

Collector Current (mA)

Collector Voltage (V)

iil766_03

0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

200

180

160

140

120

100

l766_04

Temperature (°C)

Dark Current (nA)

0 25 50 75 100 125

iil766_04

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Document Number 83643

Rev. 1.4, 26-Oct-04

VISHAY

IL766/ ILD766

Vishay Semiconductors

Figure 5. Normalized CTR vs. Forward Current

Figure 6. tr vs. Forward Current

Figure 7. Saturated Switching Characteristics Measurements-

Schematic and Waveform

iil766_05

NCTRce - Normalized CTR

.1 1 10 100

.01

IF- LED Current - mA

VCE =1V

VCE =5V

Normalized @

IF=10mA

TA= 25°C

iil766_06

Trise (µs)

IF- LED Current - mA

RL=1k

RL=10k

iil766_07

tStF

tPHL

tPLH

VTH=1.5 V

VCC =10 V

F=10 KHz,

DF=50%

IF=2 mA

Figure 8. tfall vs. Forward Current

Figure 9. ton vs. Forward Current

Figure 10. toff vs. Forward Current

iil766_08

Tfall (µs)

110

600

500

400

300

200

100

IF- LED Current - mA

RL=1k

RL= 10k

iil766_09

Tphl (µs)

110

IF- LED Current - mA

RL=1k

RL= 10k

iil766_10

Toff (µs)

110

700

600

500

400

300

200

100

IF- LED Current - mA

RL=1k

RL= 10k

VISHAY

IL766/ ILD766

Document Number 83643

Rev. 1.4, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Package Dimensions in Inches (mm)

Figure 11. tphl vs. Forward Current

iil766_11

Ton (µs)

110

IF- LED Current - mA

RL=1k

RL= 10k

Figure 12. tplh vs. Forward Current

iil766_12

Tplh (µs)

110

400

300

200

100

IF- LED Current - mA

RL= 10k

RL=1k

i178004

.010 (.25)

typ.

.114 (2.90)

.130 (3.0)

.130 (3.30)

.150 (3.81)

.031 (0.80) min.

.300 (7.62)

typ.

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

.039

(1.00)

Min.

.018 (0.45)

.022 (0.55)

.048 (0.45)

.022 (0.55)

.248 (6.30)

.256 (6.50)

.335 (8.50)

.343 (8.70)

pin one ID

18°

3°–9°

.300–.347

(7.62–8.81)

4°

typ.

ISO Method A

www.vishay.com

Document Number 83643

Rev. 1.4, 26-Oct-04

VISHAY

IL766/ ILD766

Vishay Semiconductors

Package Dimensions in Inches (mm)

i178006

pin one ID

.255 (6.48)

.268 (6.81)

.379 (9.63)

.390 (9.91)

.030 (0.76)

.045 (1.14)

4° typ.

.100 (2.54) typ.

10°

3°–9°

.300 (7.62)

typ.

.018 (.46)

.022 (.56) .008 (.20)

.012 (.30)

.110 (2.79)

.130 (3.30)

.150 (3.81)

.020 (.51 )

.035 (.89 )

.230(5.84)

.250(6.35)

4321

.031 (0.79)

.050 (1.27)

5678

ISO Method A

.315 (8.0)

MIN.

.255 (6.5)

.248 (6.3)

.300 (7.62)

TYP.

.180 (4.6)

.160 (4.1)

.331 (8.4)

MIN.

.406 (10.3)

MAX.

.028 (0.7)

MIN.

Option 7

18447

VISHAY

IL766/ ILD766

Document Number 83643

Rev. 1.4, 26-Oct-04

Vishay Semiconductors

www.vishay.com

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423