©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
KSA1175
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -150 mA
PCCollector Power Dissipation 250 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parame ter Test Condition Min. Typ. Max. Units
BVCBO Collect or-B ase Break down Voltage IC= -100µA, IE=0 -60 V
BVCEO Collect or-E mitter Break down Voltage IC= -10mA, IB=0 -50 V
BVEBO Emitter-Base Breakdown Voltage IE= -10µA, IC=0 -5 V
ICBO Collector Cut-off Current VCB= -60V, IE=0 -0.1 µA
IEBO Emitter Cut-off Current VEB= -5V, IC=0 -0.1 µA
hFE DC Current Gain VCE= -6V, IC= -1mA 40 700
VCE (sat) Collector-Emitter Saturat ion Voltage IC= -100mA, IB= -10mA -0.18 -0.3 V
VBE (on) Base-Emitter On Voltage VCE= -6V, IE= -1mA -0.50 -0.62 -0.80 V
fTCurrent Gain Bandwidth Product VCE= -6V, IC= -10mA 50 180 MHz
Cob Output Capacitance VCB= -10V, IE=0, f=1M H z 2.8 pF
NF Noise Figure VCE= -6V, IC= -0.3mA
f=100Hz, RS=10K6.0 20 dB
Classification R O Y G L
hFE 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700
KSA1175
Low Frequency Amplifier
Collector-Base Voltage : VCBO= -60V
Complement to KSC2785
1.Emitter 2. Collector 3. Base
TO-92S
1
©2002 Fairchild Semiconductor Corporation
KSA1175
Rev. A2, September 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IB = -400µA
IB = -350µA
IB = -300µA
IB = -200µA
IB = -150µA
IB = -100µA
IB = -250µA
IB = -50µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100
1
10
100
1000
VCE = -6V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100
-0.01
-0.1
-1
-10
VCE(sat)
IC=10IB
VBE(sat)
VBE(sat)[V], VCE(sat)[V] , SA T URATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100
VCE=-6V
IC[mA], COLLECTOR CURRENT
VBE(sat)[V], BASE-EMITTER VOLTAGE
-1 -10 -100
1
10
f=1MHz
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10
10
100
1000
VCE=-6V
hFE, DC CURR ENT GAIN
IC[mA], COLLECTOR CURRENT
4.00 ±0.20
3.72 ±0.20
2.86 ±0.20
2.31 ±0.20
3.70 ±0.20
0.77 ±0.10 14.47 ±0.30
(1.10)
0.49 ±0.10
1.27TYP
[1.27±0.20] [1.27±0.20]
1.27TYP
0.66 MAX.
0.35 +0.10
–0.05
TO-92S
Package Dimensions
KSA1175
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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