IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries HighspeedsoftswitchingTRENCHSTOPTMIGBT6inTrenchandFieldstop technologycopackedwithsoftandfastrecoveryanti-paralleldiode Features: C 1200VTRENCHSTOPTMIGBT6technologyoffering: *Highefficiencyinhardswitchingandresonanttopologies *Easyparallelingcapabilityduetopositivetemperature coefficientinVCEsat *LowEMI *LowGateChargeQg *Verysoft,fastrecoveryanti-paralleldiode *Maximumjunctiontemperature175C *Pb-freeleadplating;RoHScompliant *CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: *IndustrialUPS *Charger *Energystorage *Three-levelSolarStringInverter *Welding G C E ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IKW15N120BH6 Datasheet www.infineon.com VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 1200V 15A 1.9V 175C K15MBH6 PG-TO247-3 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Datasheet 2 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 1200 V DCcollectorcurrent,limitedbyTvjmax Tc=25C Tc=100C IC 30.0 15.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A TurnoffsafeoperatingareaVCE1200V,Tvj175C - 60.0 A Diodeforwardcurrent,limitedbyTvjmax Tc=25C Tc=100C IF 15.0 7.5 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Gate-emitter voltage TransientGate-emittervoltage(tp0.5s,D<0.001) VGE 20 25 V Short circuit withstand time VGE=15.0V,VCC500V Allowed number of short circuits < 1000 Time between short circuits: 1.0s Tvj=150C tSC PowerdissipationTc=25C PowerdissipationTc=100C Ptot 200.0 100.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C s 3 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics IGBT thermal resistance, junction - case Rth(j-c) - - 0.74 K/W Diode thermal resistance, junction - case Rth(j-c) - - 2.40 K/W Thermal resistance junction - ambient Rth(j-a) - - 40 K/W Datasheet 3 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. VGE=15.0V,IC=15.0A Tvj=25C Tvj=125C Tvj=175C - 1.90 2.20 2.35 2.30 - Unit StaticCharacteristic Collector-emitter saturation voltage VCEsat V Diode forward voltage VF VGE=0V,IF=7.5A Tvj=25C Tvj=175C - 2.00 2.00 2.40 - V Diode forward voltage VF VGE=0V,IF=15.0A Tvj=25C Tvj=175C - 2.65 2.75 3.20 - V Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.7 6.3 V Zero gate voltage collector current ICES VCE=1200V,VGE=0V Tvj=25C Tvj=175C - 450 250 - A Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA Transconductance gfs VCE=20V,IC=15.0A - 10.0 - S ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 860 - - 60 - - 40 - - 92.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=960V,IC=15.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 29 - ns - 240 - ns - 25 - ns - 0.70 - mJ - 0.55 - mJ - 1.25 - mJ IGBTCharacteristic,atTvj=25C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Datasheet Tvj=25C, VCC=600V,IC=15.0A, VGE=0.0/15.0V, RG(on)=22.0,RG(off)=22.0, L=95nH,C=67pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. 4 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries DiodeCharacteristic,atTvj=25C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Tvj=25C, VR=600V, IF=15.0A, diF/dt=500A/s, L=95nH, C=67pF - 340 - ns - 0.83 - C - 8.3 - A - -55 - A/s SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 17 - ns - 29 - ns - 310 - ns - 63 - ns - 0.95 - mJ - 1.10 - mJ - 2.05 - mJ - 540 - ns - 1.75 - C - 11.3 - A - -42 - A/s IGBTCharacteristic,atTvj=175C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175C, VCC=600V,IC=15.0A, VGE=0.0/15.0V, RG(on)=22.0,RG(off)=22.0, L=95nH,C=67pF L,CfromFig.E Energy losses include "tail" and diode reverse recovery. DiodeCharacteristic,atTvj=175C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet dirr/dt Tvj=175C, VR=600V, IF=15.0A, diF/dt=500A/s, L=95nH, C=67pF 5 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries 100 60 VGE=20V not for linear use 17V 10 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 50 11V 40 9V 7V 30 20 10 1 1 10 100 0 1000 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Forwardbiassafeoperatingarea (D=0,Tvj175C;VGE=15V,pulsewidth limitedbyTvjmax) 3 4 5 6 60 VGE=20V Tvj=25C Tvj=175C 17V 50 50 15V 13V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 2 Figure 2. Typicaloutputcharacteristic (Tvj=25C) 60 11V 40 9V 7V 30 20 40 30 20 10 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 0 1 2 3 4 5 0 6 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=175C) Datasheet 4 6 8 10 12 14 VGE,GATE-EMITTERVOLTAGE[V] Figure 4. Typicaltransfercharacteristic (VCE=20V) 6 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries 1000 IC=7.5A IC=15A IC=30A 3.5 td(off) tf td(on) tr 3.0 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 4.0 2.5 2.0 1.5 100 10 1.0 0.5 0.0 25 50 75 100 125 150 1 175 0 Tvj,JUNCTIONTEMPERATURE[C] 5 10 15 20 25 30 IC,COLLECTORCURRENT[A] Figure 5. Typicalcollector-emittersaturationvoltageas Figure 6. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=175C,VCE=600V, VGE=15/0V,RG=22,Dynamictestcircuitin Figure E) 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 td(off) tf td(on) tr 100 10 0 20 40 60 80 100 100 10 120 RG,GATERESISTOR[] Figure 7. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=175C,VCE=600V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) Datasheet 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 8. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=600V,VGE=15/0V, IC=15A,RG=22,Dynamictestcircuitin Figure E) 7 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries 5.0 typ. min. max. 6.5 4.5 4.0 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 7.0 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 3.5 3.0 Eoff Eon Ets 0.5 25 50 75 100 125 150 0.0 175 0 Tvj,JUNCTIONTEMPERATURE[C] 5 10 15 20 25 30 IC,COLLECTORCURRENT[A] Figure 9. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) Figure 10. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=175C,VCE=600V, VGE=15/0V,RG=22,Dynamictestcircuitin Figure E) 4.5 2.5 3.5 2.0 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 4.0 Eoff Eon Ets 3.0 2.5 2.0 1.5 1.0 Eoff Eon Ets 1.5 1.0 0.5 0.5 0.0 0 20 40 60 80 100 0.0 120 RG,GATERESISTOR[] Figure 11. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=175C,VCE=600V, VGE=15/0V,IC=15A,Dynamictestcircuitin Figure E) Datasheet 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 12. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=600V,VGE=15/0V, IC=15A,RG=22,Dynamictestcircuitin Figure E) 8 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries 3.0 800 Tvj=25C Tvj=175C 700 diF/dt,DIODECURRENTSLOPE[A/s] E,SWITCHINGENERGYLOSSES[mJ] 2.5 Eoff Eon Ets 2.0 1.5 1.0 600 500 400 300 200 0.5 100 0.0 400 450 500 550 600 650 700 750 0 800 0 20 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 13. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=175C,VGE=15/0V, IC=15A,RG=22,Dynamictestcircuitin Figure E) 60 80 100 120 Figure 14. Typicaldiodecurrentslopeasafunctionof gateresistor (inductiveload,VCE=600V,VGE=0/15V, IC=40A,DynamictestcircuitinFigureE) 16 1E+4 VCC=240V VCC=960V Cies Coes Cres 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 40 RG,GATERESISTOR[] 10 8 6 1000 100 4 2 0 0 20 40 60 80 10 100 QGE,GATECHARGE[nC] Figure 15. Typicalgatecharge (IC=15A) Datasheet 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 9 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries 6.0 5.5 tSC,SHORTCIRCUITWITHSTANDTIME[s] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 90 80 70 60 50 5.0 4.5 4.0 3.5 3.0 2.5 40 12.0 12.5 13.0 13.5 14.0 14.5 2.0 12.0 15.0 VGE,GATE-EMITTERVOLTAGE[V] 12.5 13.0 13.5 14.0 14.5 15.0 VGE,GATE-EMITTERVOLTAGE[V] Figure 17. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE500V,Tvj150C) Figure 18. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE500V,startatTvj150C) 0.1 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 1 D=0.5 0.2 0.1 0.01 0.05 0.02 0.01 single pulse 0.001 1E-4 1 D=0.5 0.2 0.1 0.05 0.1 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 0.1688123 0.2736341 0.2844153 0.01358942 2.1E-3 i[s]: 3.1E-4 2.9E-3 0.01523587 0.2101353 2.475492 1E-5 1E-8 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 5 ri[K/W]: 0.01879075 1.08659 0.9288417 0.3514893 0.02098241 i[s]: 4.2E-5 3.9E-4 2.7E-3 0.01706908 0.1950848 1 0.001 1E-7 tp,PULSEWIDTH[s] Figure 19. IGBTtransientthermalresistance (D=tp/T) Datasheet 0.02 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 20. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 10 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries 900 2.0 Tvj=25C, IF = 15A Tvj=175C, IF = 15A Tvj=25C, IF = 15A Tvj=175C, IF = 15A 1.8 Qrr,REVERSERECOVERYCHARGE[C] trr,REVERSERECOVERYTIME[ns] 800 700 600 500 400 1.6 1.4 1.2 1.0 300 200 100 0.8 200 300 400 500 600 700 0.6 100 800 diF/dt,DIODECURRENTSLOPE[A/s] 200 Figure 21. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=600V) 600 700 800 Tvj=25C, IF = 15A Tvj=175C, IF = 15A 12 -20 dIrr/dt,diodepeakrateoffallofIrr[A/s] Irr,REVERSERECOVERYCURRENT[A] 500 0 Tvj=25C, IF = 15A Tvj=175C, IF = 15A 10 8 6 4 -40 -60 -80 -100 200 300 400 500 600 700 800 -120 100 diF/dt,DIODECURRENTSLOPE[A/s] Figure 23. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=600V) Datasheet 400 Figure 22. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=600V) 14 2 100 300 diF/dt,DIODECURRENTSLOPE[A/s] 200 300 400 500 600 700 800 diF/dt,DIODECURRENTSLOPE[A/s] Figure 24. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=600V) 11 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries 1.0 60 Tj=25C, IF = 15A Tj=175C, IF = 15A Tvj=25C Tvj=175C 50 0.8 IF,FORWARDCURRENT[A] Erec,SWITCHINGENERGYLOSSES[mJ] 0.9 0.7 0.6 0.5 0.4 0.3 0.2 40 30 20 10 0.1 0.0 100 200 300 400 500 600 700 0 800 diF/dt,DIODECURRENTSLOPE[A/s] 0 1 2 3 4 5 6 VF,FORWARDVOLTAGE[V] Figure 25. Typicalreverseenergylossesasafunction ofdiodecurrentslope (VR=600V) Figure 26. Typicaldiodeforwardcurrentasafunction offorwardvoltage 4.5 IF=7.5A IF=15A IF=30A VF,FORWARDVOLTAGE[V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[C] Figure 27. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Datasheet 12 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries Package Drawing PG-TO247-3 Datasheet 13 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. Datasheet 14 V2.1 2018-05-07 IKW15N120BH6 Sixthgeneration,highspeedsoftswitchingseries RevisionHistory IKW15N120BH6 Revision:2018-05-07,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2018-05-07 Final data sheet Datasheet 15 V2.1 2018-05-07 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)InfineonTechnologiesAG2018. AllRightsReserved. ImportantNotice Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie").Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird party. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseof theproductofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof customer'stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest InfineonTechnologiesoffice(www.infineon.com). PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotive ElectronicsCouncil. Warnings Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestion pleasecontactyournearestInfineonTechnologiesoffice. 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