Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1
www.infineon.com 2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
HighspeedsoftswitchingTRENCHSTOPTMIGBT6inTrenchandFieldstop
technologycopackedwithsoftandfastrecoveryanti-paralleldiode
Features:
1200VTRENCHSTOPTMIGBT6technologyoffering:
•Highefficiencyinhardswitchingandresonanttopologies
•Easyparallelingcapabilityduetopositivetemperature
coefficientinVCEsat
•LowEMI
•LowGateChargeQg
•Verysoft,fastrecoveryanti-paralleldiode
•Maximumjunctiontemperature175°C
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
•IndustrialUPS
•Charger
•Energystorage
•Three-levelSolarStringInverter
•Welding
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttests
ofJEDEC47/20/22
G
C
E
G
C
E
KeyPerformanceandPackageParameters
Type VCE ICVCEsat,Tvj=25°C Tvjmax Marking Package
IKW15N120BH6 1200V 15A 1.9V 175°C K15MBH6 PG-TO247-3
Datasheet 2 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet 3 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter Symbol Value Unit
Collector-emittervoltage,Tvj≥25°C VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IC30.0
15.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 60.0 A
TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 60.0 A
Diodeforwardcurrent,limitedbyTvjmax
Tc=25°C
Tc=100°C
IF15.0
7.5
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤0.5µs,D<0.001) VGE ±20
25 V
Short circuit withstand time
VGE=15.0V,VCC≤500V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=150°C
tSC
3
µs
PowerdissipationTc=25°C
PowerdissipationTc=100°C Ptot 200.0
100.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M0.6 Nm
ThermalResistance
Value
min. typ. max.
Parameter Symbol Conditions Unit
RthCharacteristics
IGBT thermal resistance,
junction - case Rth(j-c) - - 0.74 K/W
Diode thermal resistance,
junction - case Rth(j-c) - - 2.40 K/W
Thermal resistance
junction - ambient Rth(j-a) - - 40 K/W
Datasheet 4 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
StaticCharacteristic
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
-
-
-
1.90
2.20
2.35
2.30
-
-
V
Diode forward voltage VF
VGE=0V,IF=7.5A
Tvj=25°C
Tvj=175°C
-
-
2.00
2.00
2.40
-
V
Diode forward voltage VF
VGE=0V,IF=15.0A
Tvj=25°C
Tvj=175°C
-
-
2.65
2.75
3.20
-
V
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 5.1 5.7 6.3 V
Zero gate voltage collector current ICES
VCE=1200V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
-
450
250
-
µA
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA
Transconductance gfs VCE=20V,IC=15.0A - 10.0 - S
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Value
min. typ. max.
Parameter Symbol Conditions Unit
DynamicCharacteristic
Input capacitance Cies - 860 -
Output capacitance Coes - 60 -
Reverse transfer capacitance Cres - 40 -
VCE=25V,VGE=0V,f=1MHz pF
Gate charge QGVCC=960V,IC=15.0A,
VGE=15V - 92.0 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=25°C
Turn-on delay time td(on) - 18 - ns
Rise time tr- 29 - ns
Turn-off delay time td(off) - 240 - ns
Fall time tf- 25 - ns
Turn-on energy Eon - 0.70 - mJ
Turn-off energy Eoff - 0.55 - mJ
Total switching energy Ets - 1.25 - mJ
Tvj=25°C,
VCC=600V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=22.0Ω,RG(off)=22.0Ω,
Lσ=95nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
Datasheet 5 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time trr - 340 - ns
Diode reverse recovery charge Qrr - 0.83 - µC
Diode peak reverse recovery current Irrm - 8.3 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -55 - A/µs
Tvj=25°C,
VR=600V,
IF=15.0A,
diF/dt=500A/µs,
Lσ=95nH,
Cσ=67pF
SwitchingCharacteristic,InductiveLoad
Value
min. typ. max.
Parameter Symbol Conditions Unit
IGBTCharacteristic,atTvj=175°C
Turn-on delay time td(on) - 17 - ns
Rise time tr- 29 - ns
Turn-off delay time td(off) - 310 - ns
Fall time tf- 63 - ns
Turn-on energy Eon - 0.95 - mJ
Turn-off energy Eoff - 1.10 - mJ
Total switching energy Ets - 2.05 - mJ
Tvj=175°C,
VCC=600V,IC=15.0A,
VGE=0.0/15.0V,
RG(on)=22.0Ω,RG(off)=22.0Ω,
Lσ=95nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
DiodeCharacteristic,atTvj=175°C
Diode reverse recovery time trr - 540 - ns
Diode reverse recovery charge Qrr - 1.75 - µC
Diode peak reverse recovery current Irrm - 11.3 - A
Diode peak rate of fall of reverse
recoverycurrentduringtbdirr/dt - -42 - A/µs
Tvj=175°C,
VR=600V,
IF=15.0A,
diF/dt=500A/µs,
Lσ=95nH,
Cσ=67pF
Datasheet 6 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
Figure 1. Forwardbiassafeoperatingarea
(D=0,Tvj≤175°C;VGE=15V,pulsewidth
limitedbyTvjmax)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
1 10 100 1000
1
10
100
not for linear use
Figure 2. Typicaloutputcharacteristic
(Tvj=25°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0123456
0
10
20
30
40
50
60
VGE=20V
17V
15V
13V
11V
9V
7V
Figure 3. Typicaloutputcharacteristic
(Tvj=175°C)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
0123456
0
10
20
30
40
50
60
VGE=20V
17V
15V
13V
11V
9V
7V
Figure 4. Typicaltransfercharacteristic
(VCE=20V)
VGE,GATE-EMITTERVOLTAGE[V]
IC,COLLECTORCURRENT[A]
4 6 8 10 12 14
0
10
20
30
40
50
60
Tvj=25°C
Tvj=175°C
Datasheet 7 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
Figure 5. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Tvj,JUNCTIONTEMPERATURE[°C]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC=7.5A
IC=15A
IC=30A
Figure 6. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=15/0V,RG=22Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
t,SWITCHINGTIMES[ns]
0 5 10 15 20 25 30
1
10
100
1000
td(off)
tf
td(on)
tr
Figure 7. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=175°C,VCE=600V,
VGE=15/0V,IC=15A,Dynamictestcircuitin
Figure E)
RG,GATERESISTOR[Ω]
t,SWITCHINGTIMES[ns]
0 20 40 60 80 100 120
10
100
1000
td(off)
tf
td(on)
tr
Figure 8. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=600V,VGE=15/0V,
IC=15A,RG=22Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
t,SWITCHINGTIMES[ns]
25 50 75 100 125 150 175
10
100
1000
td(off)
tf
td(on)
tr
Datasheet 8 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
Figure 9. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.5mA)
Tvj,JUNCTIONTEMPERATURE[°C]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
25 50 75 100 125 150 175
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
typ.
min.
max.
Figure 10. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=600V,
VGE=15/0V,RG=22Ω,Dynamictestcircuitin
Figure E)
IC,COLLECTORCURRENT[A]
E,SWITCHINGENERGYLOSSES[mJ]
0 5 10 15 20 25 30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Eoff
Eon
Ets
Figure 11. Typicalswitchingenergylossesasa
functionofgateresistor
(inductiveload,Tvj=175°C,VCE=600V,
VGE=15/0V,IC=15A,Dynamictestcircuitin
Figure E)
RG,GATERESISTOR[Ω]
E,SWITCHINGENERGYLOSSES[mJ]
0 20 40 60 80 100 120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Eoff
Eon
Ets
Figure 12. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=600V,VGE=15/0V,
IC=15A,RG=22Ω,Dynamictestcircuitin
Figure E)
Tvj,JUNCTIONTEMPERATURE[°C]
E,SWITCHINGENERGYLOSSES[mJ]
25 50 75 100 125 150 175
0.0
0.5
1.0
1.5
2.0
2.5
Eoff
Eon
Ets
Datasheet 9 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
Figure 13. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=15/0V,
IC=15A,RG=22Ω,Dynamictestcircuitin
Figure E)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
400 450 500 550 600 650 700 750 800
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Eoff
Eon
Ets
Figure 14. Typicaldiodecurrentslopeasafunctionof
gateresistor
(inductiveload,VCE=600V,VGE=0/15V,
IC=40A,DynamictestcircuitinFigureE)
RG,GATERESISTOR[Ω]
diF/dt,DIODECURRENTSLOPE[A/µs]
0 20 40 60 80 100 120
0
100
200
300
400
500
600
700
800
Tvj=25°C
Tvj=175°C
Figure 15. Typicalgatecharge
(IC=15A)
QGE,GATECHARGE[nC]
VGE,GATE-EMITTERVOLTAGE[V]
0 20 40 60 80 100
0
2
4
6
8
10
12
14
16
VCC=240V
VCC=960V
Figure 16. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
VCE,COLLECTOR-EMITTERVOLTAGE[V]
C,CAPACITANCE[pF]
0 5 10 15 20 25 30
10
100
1000
1E+4
Cies
Coes
Cres
Datasheet 10 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
Figure 17. Typicalshortcircuitcollectorcurrentasa
functionofgate-emittervoltage
(VCE≤500V,Tvj≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]
12.0 12.5 13.0 13.5 14.0 14.5 15.0
40
50
60
70
80
90
Figure 18. Shortcircuitwithstandtimeasafunctionof
gate-emittervoltage
(VCE≤500V,startatTvj≤150°C)
VGE,GATE-EMITTERVOLTAGE[V]
tSC,SHORTCIRCUITWITHSTANDTIME[µs]
12.0 12.5 13.0 13.5 14.0 14.5 15.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Figure 19. IGBTtransientthermalresistance
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-8 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
1E-5
1E-4
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.1688123
3.1E-4
2
0.2736341
2.9E-3
3
0.2844153
0.01523587
4
0.01358942
0.2101353
5
2.1E-3
2.475492
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
tp,PULSEWIDTH[s]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
ri[K/W]:
τi[s]:
1
0.01879075
4.2E-5
2
1.08659
3.9E-4
3
0.9288417
2.7E-3
4
0.3514893
0.01706908
5
0.02098241
0.1950848
Datasheet 11 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
Figure 21. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
trr,REVERSERECOVERYTIME[ns]
100 200 300 400 500 600 700 800
200
300
400
500
600
700
800
900
Tvj=25°C, IF = 15A
Tvj=175°C, IF = 15A
Figure 22. Typicalreverserecoverychargeasa
functionofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Qrr,REVERSERECOVERYCHARGE[µC]
100 200 300 400 500 600 700 800
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Tvj=25°C, IF = 15A
Tvj=175°C, IF = 15A
Figure 23. Typicalreverserecoverycurrentasa
functionofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Irr,REVERSERECOVERYCURRENT[A]
100 200 300 400 500 600 700 800
2
4
6
8
10
12
14
Tvj=25°C, IF = 15A
Tvj=175°C, IF = 15A
Figure 24. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
100 200 300 400 500 600 700 800
-120
-100
-80
-60
-40
-20
0
Tvj=25°C, IF = 15A
Tvj=175°C, IF = 15A
Datasheet 12 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
Figure 25. Typicalreverseenergylossesasafunction
ofdiodecurrentslope
(VR=600V)
diF/dt,DIODECURRENTSLOPE[A/µs]
Erec,SWITCHINGENERGYLOSSES[mJ]
100 200 300 400 500 600 700 800
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Tj=25°C, IF = 15A
Tj=175°C, IF = 15A
Figure 26. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
0123456
0
10
20
30
40
50
60
Tvj=25°C
Tvj=175°C
Figure 27. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Tvj,JUNCTIONTEMPERATURE[°C]
VF,FORWARDVOLTAGE[V]
25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
IF=7.5A
IF=15A
IF=30A
Datasheet 13 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
Package Drawing PG-TO247-3
Datasheet 14 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
t
ab
td(off) tftr
td(on)
90% IC
10% IC
90% IC
10% VGE
10% IC
t
90% VGE
t
t
90% VGE
VGE(t)
t
t
t
t1t4
2% IC
10% VGE
2% VCE
t2t3
E
t
t
V I t
off = x x d
1
2
CE C
E
t
t
V I t
on = x x d
3
4
CE C
CC
dI /dt
F
dI
I,V
Figure A.
Figure B.
Figure C. Definition of diode switching
characteristics
Figure E. Dynamic test circuit
Figure D.
I (t)
C
Parasitic inductance L ,
parasitic capacitor C ,
relief capacitor C ,
(only for ZVT switching)
s
s
r
t t t
Q Q Q
rr a b
rr a b
= +
= +
QaQb
V (t)
CE
VGE(t)
I (t)
C
V (t)
CE
Testing Conditions
Datasheet 15 V2.1
2018-05-07
IKW15N120BH6
Sixthgeneration,highspeedsoftswitchingseries
RevisionHistory
IKW15N120BH6
Revision:2018-05-07,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2018-05-07 Final data sheet
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