2011-07-201
BFS17S
1
623
54
NPN Silicon RF Transistor
• For broadband amplifiers up to 1 GHz at
collector currents from 1 mA to 20 mA
• BFS17S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFS17S MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 15 V
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 2.5
Collector current IC25 mA
Peak collector current, f = 10 MHz ICM 50
Total power dissipation1)
TS ≤ 93 °C
Ptot 280 mW
Junction temperature TJ150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature TSt
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 240 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2011-07-202
BFS17S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 15 - - V
Collector-base cutoff current
VCB = 10 V, IE = 0
VCB = 25 V, IE = 0
ICBO
-
-
-
-
0.05
10
µA
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
IEBO - - 100
DC current gain
IC = 2 mA, VCE = 1 V, pulse measured
IC = 25 mA, VCE = 1 V, pulse measured
hFE
40
20
-
70
150
-
-
Collector-emitter saturation voltage
IC = 10 mA, IB = 1 mA
VCEsat - 0.1 0.4 V
2011-07-203
BFS17S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 2 mA, VCE = 5 V, f = 200 MHz
IC = 25 mA, VCE = 5 V, f = 200 MHz
fT
1
1.3
1.4
2.5
-
-
GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.55 0.8 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.9 1.45
Minimum noise figure
IC = 2 mA, VCE = 5 V, ZS = 50 Ω,
f = 800 MHz
NFmin - 3 5 dB
Transducer gain
IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω,
f = 500 MHz
|S21e|2- 14 - dB
Third order intercept point at output
VCE = 5 V, IC = 20 mA, f = 800 MHz,
ZS = ZSopt, ZL = ZLopt
IP3- 22.5 - dBm
1dB compression point
IC = 20 mA, VCE = 5 V, ZS = ZL = 50Ω,
f = 800 MHz
P-1dB - 11 - -
2011-07-204
BFS17S
Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
180
200
220
240
mW
300
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
f = 1 MHz
0 2 4 6 8 10 12 14 16 V20
VCB, VEB
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
pF
1.2
CCB, CEB
CCB
CEB
2011-07-205
BFS17S
Transition frequency fT= ƒ(IC)
VCE = parameter
0 5 10 15 20 mA 30
IC
0
0.5
1
1.5
2
GHz
3
fT
10V
5V
3V
2V
1V
0.7V
2011-07-206
BFS17S
Package SOT363
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
BCR108S
Type code
Pin 1 marking
Laser marking
0.3
0.70.9
0.65
0.65
1.6
0.2
4
2.15 1.1
8
2.3
Pin 1
marking
+0.1
0.2
1
6
23
5 4
±0.2
2
+0.1
-0.05
0.15
±0.1
1.25
0.1 MAX.
0.9 ±0.1
A
-0.05 6x
0.1 M
0.650.65
2.1
±0.1
0.1
0.1 MIN.
M
0.2 A
Pin 1
marking
2011-07-207
BFS17S
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
