CS 29 Phase Control Thyristor VRRM = 800/1200 V IT(RMS) = 35 A IT(AV)M = 23 A ISOPLUS220TM Electrically Isolated Back Surface Preliminary Data Sheet VRSM VDSM VRRM VDRM V V 800 1200 800 1200 ISOPLUS 220TM Type A C CS 29-08io1C CS 29-12io1C G Isolated back surface* Symbol Conditions Maximum Ratings IT(RMS) IT(AV)M TVJ = TVJM TC = 95C; 180 sine (IT(RMS) current limit) ITSM TVJ = 45C; VR = 0 V 35 23 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 215 A A TVJ = TVJM; VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 175 185 A A TVJ = 45C; VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 195 A2s A2s TVJ = TVJM; VR = 0 V t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 155 145 A2s A2s TVJ = TVJM; repetitive, IT = 40 A f = 50 Hz; tP = 200 s; VD = 2/3 VDRM; IG = 0.2 A; non repetitive, IT = IT(AV)M diG/dt = 0.2 A/s 150 A/s 500 A/s 1000 V/s 5 2.5 0.5 W W W VRGM 10 V TVJ TVJM Tstg -40...+150 150 -40...+150 C C C I2t (di/dt)cr (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM; RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM; IT = IT(AV)M; PGAV tP = 30 s tP = 300 s VISOL 50/60 Hz RMS; IISOL 1 mA TL 1.6 mm from case; 10 s FC Mounting force 2500 Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500 V electrical isolation Low cathode-to-tab capacitance (15 pF typical) Planar passivated chips Epoxy meets UL 94V-0 High performance glass passivated chip Long-term stability of leakage current and blocking voltage Applications Motor control Power converter AC power controller Light and temperature control SCR for inrush current limiting in power supplies or AC drive Advantages Space and weight savings Simple mounting V~ 260 C 11...65 / 2.4...11 N/lb 2 g Weight IXYS reserves the right to change limits, conditions and dimensions. (c) 2003 IXYS All rights reserved Features 98839A (04/28) CS 29 Symbol Conditions IR, ID TVJ = TVJM; VR = VRRM; VD = VDRM 2 mA VT IT 1.5 V VT0 rT For power-loss calculations only (TVJ = 125C) 0.82 16.5 V m VGT VD = 6 V; 10 Characteristic Values = 45 A; TVJ = 25C TVJ = 25C TVJ = -40C 1.0 1.2 V V TVJ = 25C TVJ = -40C 65 80 mA mA 0.2 5 V mA 150 mA IGT VD = 6 V; VGD IGD TVJ = TVJM; VD = 2/3 VDRM IL TVJ = 25C; tP = 10 s; IG = 0.2; diG/dt = 0.2 A/s IH TVJ = 25C; VD = 6 V; RGK = 50 mA tgd TVJ = 25C; VD = 1/2 VDRM; IG = 0.2 A; diG/dt = 0.2 A/s 2 s RthJC RthCK DC current DC current typical 1.2 0.6 K/W K/W a Max. acceleration, 50 Hz 50 m/s2 1: IGT, TVJ = 125C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C V VG 1 1 2 6 4 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ =125C 0.1 1 10 100 1000 mA 10000 IG Fig. 1 Gate trigger range 1000 See CS 30..io1 data sheet for electrical characteristic curves. 5 3 TVJ = 25C s tgd 100 typ. Limit ISOPLUS220 Outline 10 1 10 100 IG mA 1000 Fig. 2 Gate controlled delay time tgd (c) 2003 IXYS All rights reserved CS 29 100 400 2000 50Hz, 80%VRRM VR = 0 V A2s A A ITSM IT 80 300 TVJ = 45C TVJ = 45C 2 It 60 1000 200 40 TVJ = 125C TVJ = 125C TVJ = 125C 100 20 TVJ = 25C 0 0.0 0.5 1.0 1.5 VT Fig. 3 V 2.0 0 0.001 500 0.01 0.1 s 1 1 2 3 t Forward characteristics Fig. 4 Surge overload current ITSM: crest value, t: duration 140 W 120 PT 100 80 5 6 7 ms 8 910 t Fig. 5 I2t versus time (1-10 ms) 80 A RthKA : 4 DC 180 sin 120 60 30 70 IT(AV)M 0.1 K/W 0.5 K/W 60 1 K/W 2 K/W 50 4 K/W 10 K/W 40 60 40 20 0 30 DC 180 sin 120 60 30 0 10 20 30 40 50 60 20 10 70 A 0 25 50 IT(AV)M Fig. 6 75 100 125 C 150 Tamb Power dissipation versus forward current and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2003 IXYS All rights reserved 0 0 20 40 60 80 100 120 C Tcase