5STP 12F4201
TS - TV/121/04 Oct-10 1 of 5
5STP 12F4201
Old part no. TV 918-1200-42
Phase Control Thyristor
Properties Key Parameters
§ High operational capability VDRM, VRRM
=
4 200 V
§ Possibility of serial and parallel connection ITAVm
=
1 247 A
Applications ITSM
=
15 000 A
§ Controlled rectifiers VTO
=
1.252 V
§ AC drives rT
=
0.421 mΩ
Types
VRRM, VDRM
5STP 12F4201
5STP 12F4001 4 200 V
4 000 V
Conditions:
Tj = -40 ÷ 125 °C,
half sine waveform,
f = 50 Hz, note 1
Mechanical Data
Fm Mounting force
22 ± 2
kN
m Weight 0.48
kg
DS Surface
creepage
distance
25
mm
Da Air strike
distance 13
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5STP 12F4201
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TV/121/04 Oct-10 2 of 5
Maximum Ratings Maximum Limits Unit
VRRM
VDRM
Repetitive peak reverse
and off-state voltage
Tj = -40 ÷ 125 °C, note 1
5STP 12F4201
5STP 12F4001 4 200
4 000 V
VRSM
VDSM Non-repetitive peak
reverse and off-state
voltage
Tj = 25 ÷ 125 °C
5STP 12F4201
5STP 12F4001 4 300
4 100 V
ITRMS RMS on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 1 959 A
ITAVm Average on-state current
Tc = 70 °C, half sine waveform, f = 50 Hz 1 247
A
ITSM Peak non-repetitive surge
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 15 000
16 000 A
I2t Limiting load integral
half sine pulse, VR = 0 V tp = 10 ms
tp = 8.3 ms 1 125 000
1 060 000 A2s
(diT/dt)cr Critical rate of rise of on-state current
IT = ITAVm, half sine waveform, f = 50 Hz,
VD = 2/3 VDRM, tr = 0.3 µs, IGT = 2 A
150 A/µs
(dvD/dt)cr Critical rate of rise of off-state voltage
VD = 2/3 VDRM 1 000 V/µs
PGAVm Maximum average gate power losses 3 W
IFGM Peak gate current 10 A
VFGM Peak gate voltage 12 V
VRGM Reverse peak gate voltage 10 V
Tjmin - Tjmax Operating temperature range -40 ÷ 125 °C
Tstgmin -
Tstgmax Storage temperature range -40 ÷ 125 °C
Unless otherwise specified Tj = 125 °C
Note 1: De-rating factor of 0.13% VRRM or VDRM per °C is applicable for Tj below 25 °C
5STP 12F4201
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TV/121/04 Oct-10 3 of 5
Characteristics Value Unit
min. typ. max.
VTM Maximum peak on-state voltage
ITM = 2 000 A 2.100
V
VT0 Threshold voltage 1.252
V
rT Slope resistance
IT1 = 1 885 A, IT2 = 5 655 A 0.421
mΩ
IDM Peak off-state current
VD = VDRM 150 mA
IRM Peak reverse current
VR = VRRM 150 mA
tgd Delay time
Tj = 25 °C, VD = 0.4 VDRM, ITM = ITAVm,
tr = 0.3 µs, IGT = 2 A
3 µs
tq Turn-off time
IT = 2 000 A, diT/dt = 12.5 A/µs,
VD = 2/3 VDRM, dvD/dt = 50 V/µs
600 µs
Qrr Recovery charge
the same conditions as at tq 2 500
µC
IH Holding current Tj = 25 °C
Tj = 125 °C 170
90 mA
IL Latching current Tj = 25 °C
Tj = 125 °C 450
350 mA
VGT Gate trigger voltage
VD = 12 V, IT = 4 A Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
0.25
4
3
2
V
IGT
Gate trigger current
VD = 12 V, IT = 4 A Tj = - 40 °C
Tj = 25 °C
Tj = 125 °C
10
500
300
200
mA
Unless otherwise specified Tj = 125 °C
Thermal Parameters Value Unit
Rthjc Thermal resistance junction to case
double side cooling 16.0 K/kW
anode side cooling 25.0
cathode side cooling 45.0
Rthch Thermal resistance case to heatsink
double side cooling 4.0 K/kW
single side cooling 8.0
5STP 12F4201
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TV/121/04 Oct-10 4 of 5
Transient Thermal Impedance
i 1 2 3 4
τi ( s ) 0.4653 0.1533 0.0375 0.0034
Ri( K/kW )
5.50 7.24 2.00 1.34
0
2
4
6
8
10
12
14
16
18
0,001 0,01 0,1 1 10
Square wave pulse duration td ( s )
Transient thermal impedance junction
to case Zthjc ( K/kW )
Analytical function for transient
thermal impedance
∑
=τ−−= 4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 22 ± 2 kN, Double side cooled
Correction for periodic waveforms
180°
sine: add 1.3 K/kW
180°
rectangular:
add 1.8 K/kW
120°
rectangular:
add 3.0 K/kW
60°
rectangular:
add 5.1 K/kW
Fig. 2
Dependence transient thermal impedance junction
to case on square pulse
0
1000
2000
3000
4000
5000
6000
7000
0 1 2 3 4
VT ( V )
IT ( A )
Tj = 25°C 125°C
6
8
10
12
14
16
18
20
22
24
26
110 100
t ( ms )
ITSM ( kA )
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
i2dt (106 A2s)
I
TSM
∫i2
dt
Fig. 3
Maximum on-state characteristics Fig. 4
Surge on-state current vs. pulse length,
half sine wave, single pulse,
VR = 0 V, Tj = Tjmax
5STP 12F4201
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - TV/121/04 Oct-10 5 of 5
0
500
1000
1500
2000
2500
3000
3500
0 300 600 900 1200 1500
ITAV ( A )
PT ( W )
ψ
= 30°
60° 90°
120°
180°
DC
0
500
1000
1500
2000
2500
3000
3500
0300 600 900 1200 1500
ITAV ( A )
PT ( W )
ψ
= 30°
60°
90°
120°
180°
270°
DC
Fig. 5
On-state power loss vs. average on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 6
On-state power loss vs. average on-state
current, square waveform, f = 50 Hz, T = 1/f
60
70
80
90
100
110
120
130
0 300 600 900 1200 1500
ITAV ( A )
TC ( °C )
180°
60°
90°
120°
ψ
= 30°
DC
60
70
80
90
100
110
120
130
0300 600 900 1200 1500
ITAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
ψ
= 30°
Fig. 7
Max. case temperature vs. aver. on-state
current, sine waveform, f = 50 Hz, T = 1/f Fig. 8
Max. case temperature vs. aver. on-state
current, square waveform, f = 50 Hz, T = 1/f
Notes:
