PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA810T NPN SILICON HIGH FREQUENCY TRANSISTOR OUTLINE DIMENSIONS (Units in mm) FEATURES * * * * * PACKAGE OUTLINE S06 (Top View) SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package 2.1 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz 1.25 0.1 HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE HIGH COLLECTOR CURRENT: 100 mA 0.65 2.0 0.2 1.3 DESCRIPTION The UPA810T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications. 1 6 2 5 3 4 0.2 (All Leads) 0.9 0.1 0.7 0.15 - 0.05 PIN OUT 1. Collector Transistor 1 2. Base Transistor 2 3. Collector Transistor 2 4. Emitter Transistor 2 5. Emitter Transistor 1 6. Base Transistor 1 0 ~ 0.1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPA810T S06 UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 A 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 A 1.0 hFE1 fT Cre2 |S21E|2 NF hFE1/hFE2 Forward Current Gain at VCE = 3 V, IC = 7 mA Gain Bandwidth at VCE = 3 V, IC = 7 mA GHz Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz pF Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB hFE Ratio: hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 70 120 3.0 4.5 0.7 7 1.5 9 1.2 0.85 Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA810T-T1, 3K per reel. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Date Published: June 28, 2005 250 2.5 UPA810T ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 VEBO Emitter to Base Voltage V 3 IC Collector Current mA 100 PT Total Power Dissipation 1 Die 2 Die mW mW 110 200 TJ Junction Temperature C 150 TSTG Storage Temperature C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. ORDERING INFORMATION (Solder Contains Lead) PART NUMBER QUANTITY UPA810T Loose Products (50 pcs) UPA810T-T1 Taping products PACKAGING Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter) face to perforation side of tape (3 KPCS/Reel) ORDERING INFORMATION (Pb-Free) PART NUMBER QUANTITY UPA810T-A Loose Products (50 pcs) UPA810T-T1-A Taping products (3 KPCS/Reel) PACKAGING Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter) face to perforation side of tape