SILICON TRANSISTOR
UPA810T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
•SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
•LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
•HIGH GAIN:
|S21E|2 = 9.0 dB TYP at 1 GHz
•EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
•HIGH COLLECTOR CURRENT: 100 mA
FEATURES OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
(Top View)
DESCRIPTION
The UPA810T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device suited for
various hand-held wireless applications.
PRELIMINARY DATA SHEET
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
0.15
0.9 ± 0.1
0.7
2.0 ± 0.2
0.65
1.3
1
2
34
5
6
0.2 (All Leads)
- 0.05
Date Published: June 28, 2005
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
T018APUREBMUN TRAP
60SENILTUO EGAKCAP
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICBOCollector Cutoff Current at VCB = 10 V, IE = 0 μ0.1A
IEBOEmitter Cutoff Current at VEB = 1 V, IC = 0 μ0.1A
hFE1Forward Current Gain at VCE = 3 V, IC05202107Am 7 =
fTGain Bandwidth at VCE = 3 V, IC = 7 mA GHz 3.0 4.5
Cre2Feedback Capacitance at VCB = 3 V, IE5.17.0FpzHM 1 = f ,0 =
|S21E|2Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 7 9
NF Noise Figure at VCE = 3 V, IC 5.22.1BdzHG 1 = f ,Am 7 =
hFE1/hFE2 hFE 58.0:oitaR
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA810T-T1, 3K per reel.
hFE1 = Smaller Value of Q1, or Q2
hFE2 = Larger Value of Q1 or Q2
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 20
VCEO Collector to Emitter Voltage V 12
VEBO Emitter to Base Voltage V 3
ICCollector Current mA 100
PTTotal Power Dissipation
1 Die mW 110
2 Die mW 200
TJJunction Temperature °C 150
TSTGStorage Temperature °C -65 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.
PART NUMBER QUANTITY PACKAGING
UPA810T Loose Products (50 pcs) Embossed tape 8mm wide. Pin 6 (Q1 Base),
Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter)
face to perforation side of tape
UPA810T-T1 Taping products
(3 KPCS/Reel)
ORDERING INFORMATION (Solder Contains Lead)
PART NUMBER QUANTITY PACKAGING
UPA810T-A Loose Products (50 pcs) Embossed tape 8mm wide. Pin 6 (Q1 Base),
Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter)
face to perforation side of tape
UPA810T-T1-A Taping products
(3 KPCS/Reel)
ORDERING INFORMATION (Pb-Free)
UPA810T
