MOTOROLA Order this document by 2N3635/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3635 2N3637 PNP Silicon 2 BASE 1 EMITTER 3 Rating Symbol 2N3635 2N3637 Unit Collector - Emitter Voltage VCEO - 140 - 175 Vdc Collector - Base Voltage VCBO - 140 - 175 Vdc Emitter - Base Voltage VEBO - 5.0 Vdc Collector Current -- Continuous IC - 1.0 Adc Total Device Dissipation @ TA = 25C Derate above 25C PD 1.0 5.71 Watts mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 5.0 28.6 Watts mW/C TJ, Tstg - 65 to +200 C Symbol Max Unit RqJA 175 C/W RqJC 35 C/W Operating and Storage Junction Temperature Range 2 1 CASE 79-04, STYLE 1 TO-39 (TO-205AD) LAST ORDER 23/09/99 LIFETIME BUY MAXIMUM RATINGS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max - 140 - 175 -- -- - 140 - 175 -- -- V(BR)EBO - 5.0 -- Vdc Collector Cutoff Current (VCB = - 100 Vdc, IE = 0) ICBO -- - 100 nAdc Emitter Cutoff Current (VEB = - 3.0 Vdc, IC = 0) IEBO -- - 50 nAdc Characteristic Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = - 10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = - 100 mAdc, IE = 0) V(BR)CEO 2N3635 2N3637 V(BR)CBO 2N3635 2N3637 Emitter - Base Breakdown Voltage (IE = - 10 mAdc, IC = 0) 1. Pulse Test: Pulse Width Vdc Vdc v 300 ms, Duty Cycle v 2.0%. (Replaces 2N3634/D) Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 2N3635 2N3637 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 80 90 100 100 50 -- -- -- 300 -- -- -- - 0.3 - 0.5 -- - 0.65 - 0.8 - 0.9 fT 200 -- MHz Output Capacitance (VCB = - 20 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 10 pF Input Capacitance (VEB = - 1.0 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 75 pF Input Impedance (IC = - 10 mAdc, VCE = - 10 Vdc, f = 1.0 kHz) hie 200 1200 Voltage Feedback Ratio (IC = - 10 mAdc, VCE = - 10 Vdc, f = 1.0 kHz) hre -- 3.0 X 10-4 Small-Signal Current Gain (IC = - 10 mAdc, VCE = - 10 Vdc, f = 1.0 kHz) hfe 80 320 -- Output Admittance (IC = - 10 mAdc, VCE = - 10 Vdc, f = 1.0 kHz) hoe -- 200 mhos Noise Figure (IC = - 0.5 mAdc, VCE = - 10 Vdc, RS = 1.0 k, f = 1.0 kHz) NF -- 3.0 dB ton -- 400 ns toff -- 600 ns hFE Collector - Emitter Saturation Voltage(1) (IC = - 10 mAdc, IB = - 1.0 mAdc) (IC = - 50 mAdc, IB = - 5.0 mAdc) VCE(sat) Base - Emitter Saturation Voltage(1) (IC = - 10 mAdc, IB = - 1.0 mAdc) (IC = - 50 mAdc, IB = - 5.0 mAdc) VBE(sat) -- Vdc Vdc LIFETIME BUY SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (VCE = - 30 Vdc, IC = - 30 mAdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time Turn-Off Time 1. Pulse Test: Pulse Width ( CC = - 100 Vdc, VBE = 4.0 Vdc, (V IC = - 50 mAdc, IB1 = IB2 = - 5.0 mAdc) v 300 ms, Duty Cycle v 2.0%. 100 C, CAPACITANCE (pF) 50 30 Cib 20 Cob 10 7.0 5.0 - 0.1 - 0.2 - 0.3 - 0.5 - 1.0 - 2.0 - 3.0 - 5.0 - 10 - 20 - 30 - 50 - 100 REVERSE BIAS (VOLTS) Figure 1. Junction Capacitance Variations 2 f r , GAIN-BANDWIDTH PRODUCT (MHz) 500 70 300 VCE = - 10 V TJ = 25C 200 100 70 50 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 IE, EMITTER CURRENT (mA) - 50 - 70 - 100 Figure 2. Gain-Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST ORDER 23/09/99 DC Current Gain (IC = - 0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc)(1) (IC = - 50 mAdc, VCE = -10 Vdc)(1) (IC = -150 mAdc, VCE = -10 Vdc)(1) LAST SHIP 21/03/00 ON CHARACTERISTICS 2N3635 2N3637 300 2N3635 VCE = - 2.0 V TJ = 125C TJ = 25C 100 LAST SHIP 21/03/00 hFE, DC CURRENT GAIN 200 TJ = - 55C 70 50 30 20 10 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 IC, COLLECTOR CURRENT (mA) - 30 - 50 - 70 - 100 - 200 2.0 2N3635 TJ = 25C 1.0 0.7 VCE = -10 V 0.5 VCE = - 2.0 V 0.3 0.2 0.1 - 1.0 NORMALIZED TO VCE = -10 V IC = - 50 mA VCE = - 1.0 V - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 IC, COLLECTOR CURRENT (mA) - 30 - 50 - 70 - 100 LAST ORDER 23/09/99 NORMALIZED DC CURRENT GAIN LIFETIME BUY Figure 3. Current Gain Characteristics versus Junction Temperature - 200 Figure 4. Current Gain Characteristics versus Collector Emitter Voltage 300 TJ = 125C 2N3637 VCE = - 2.0 V hFE , DC CURRENT GAIN 200 TJ = 25C 100 70 TJ = - 55C 50 30 20 10 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 IC, COLLECTOR CURRENT (mA) - 30 - 50 - 70 - 100 - 200 Figure 5. Current Gain Characteristics versus Junction Temperature Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 2N3635 2N3637 2N3637 TJ = 25C 0.7 VCE = -10 V 0.5 0.3 NORMALIZED TO VCE = -10 V, IC = - 50 mA VCE = - 1.0 V 0.2 0.1 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 IC, COLLECTOR CURRENT (mA) - 30 VCE = - 2.0 V - 50 - 70 - 100 - 200 70 10 7.0 5.0 3.0 2.0 2N3635, 2N3637 1.0 0.5 - 0.1 30 10 Figure 7. Input Impedance 100 70 - 0.2 - 0.3 - 0.5 - 0.7 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 IE, EMITTER CURRENT (mA) Figure 9. Current Gain - 0.2 - 0.3 - 0.5 - 0.7 - 1.0 - 2.0 - 3.0 IE, EMITTER CURRENT (mA) - 5.0 - 7.0 - 10 Figure 8. Output Impedance 200 50 - 0.1 2N3635, 2N3637 20 5.0 - 0.1 - 0.2 - 0.3 - 0.5 - 0.7 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 IE, EMITTER CURRENT (mA) 2N3635, 2N3637 hfe , CURRENT GAIN 50 7.0 0.7 150 4 hoe, OUTPUT IMPEDANCE (mohms) 20 h re , VOLTAGE FEEDBACK RATIO (X 10 -4 ) hie , INPUT IMPEDANCE (k OHMS) LIFETIME BUY Figure 6. Current Gain Characteristics versus Collector Emitter Voltage LAST SHIP 21/03/00 1.0 50 30 20 10 7.0 5.0 3.0 2N3635, 2N3637 2.0 1.0 0.7 - 0.1 - 0.2 - 0.3 - 0.5 - 0.7 - 1.0 - 2.0 - 3.0 IE, EMITTER CURRENT (mA) - 5.0 - 7.0 - 10 Figure 10. Voltage Feedback Ratio Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST ORDER 23/09/99 NORMALIZED DC CURRENT GAIN 2.0 + 1.0 F = 10 TJ = 25C - 0.8 VBE(sat) - 0.6 - 0.4 VCE(sat) - 0.2 -0 - 1.0 - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 -70 - 100 IC, COLLECTOR CURRENT (mA) VC for VCE(sat) 0 (25C to - 55C) - 1.0 VB for VBE(sat) - 1.5 (25C to 125C) 0 - 50 - 100 - 150 IC, COLLECTOR CURRENT (mA) ^ P.W. 20 s DUTY CYCLE 2% RISE TIME 20 ns Vin TURN-ON TURN-OFF Vmin - 200 Figure 12. Temperature Coefficients 2.0 k -100 V 1.0 k Vin Vmax Vmin + 4.0 V + 4.1 V - 5.65 V - 5.9 V 1000 700 500 300 200 tr VCC = - 100 V 2N3635 VCC = - 10 V 30 20 10 7.0 5.0 - 1.0 VCC = -100 V TJ = 25C 3000 2000 F = 10 TJ = 25C 2N3637 100 70 50 5000 CURVES APPLY TO ALL DEVICE TYPES EXCEPT WHERE INDICATED 1000 700 F = 20 500 F = 10 200 F = 10 tf td @ VOB = 0 V - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 - 100 IC, COLLECTOR CURRENT (mA) - 200 Figure 14. Turn-On Time Variations with Voltage Motorola Small-Signal Transistors, FETs and Diodes Device Data ts 300 100 70 50 - 1.0 F = 20 - 2.0 - 3.0 - 5.0 - 7.0 - 10 - 20 - 30 - 50 - 70 - 100 IC, COLLECTOR CURRENT (mA) - 200 Figure 15. Turn-Off Time Variations with Circuit Gain 5 LAST ORDER 23/09/99 Figure 13. Switching Time Test Circuit t, TIME (ns) t, TIME (ns) LIFETIME BUY Figure 11. Saturation Voltages Vmax (25C to 125C) - 0.5 - 2.0 - 200 (25C to - 55C) + 0.5 LAST SHIP 21/03/00 - 1.0 V, TEMPERATURE COEFFICIENT (mV/ C) Vsat , OUTPUT SATURATION VOLTAGE (VOLTS) 2N3635 2N3637 2N3635 2N3637 B C -T- E SEATING PLANE L F K P D 3 PL 0.36 (0.014) M T A M M 2 -H- 1 3 G STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR M LIFETIME BUY H J CASE 079-04 (TO-205AD) ISSUE N DIM A B C D E F G H J K L M P R INCHES MIN MAX 0.335 0.370 0.305 0.335 0.240 0.260 0.016 0.021 0.009 0.041 0.016 0.019 0.200 BSC 0.028 0.034 0.029 0.045 0.500 0.750 0.250 --- 45 _BSC --- 0.050 0.100 --- MILLIMETERS MIN MAX 8.51 9.39 7.75 8.50 6.10 6.60 0.41 0.53 0.23 1.04 0.41 0.48 5.08 BSC 0.72 0.86 0.74 1.14 12.70 19.05 6.35 --- 45 _BSC --- 1.27 2.54 --- Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 *2N3635/D* 2N3635/D Motorola Small-Signal Transistors, FETs and Diodes Device Data LAST ORDER 23/09/99 -A- R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION J MEASURED FROM DIMENSION A MAXIMUM. 4. DIMENSION B SHALL NOT VARY MORE THAN 0.25 (0.010) IN ZONE R. THIS ZONE CONTROLLED FOR AUTOMATIC HANDLING. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. DIMENSION D APPLIES BETWEEN DIMENSION L AND K MINIMUM. LEAD DIAMETER IS UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. LAST SHIP 21/03/00 PACKAGE DIMENSIONS