Order this document by P2N2222A/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO 40 Vdc Collector - Base Voltage VCBO 75 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 600 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 55 to +150 C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RqJA 200 C/W Thermal Resistance, Junction to Case RqJC 83.3 C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector - Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 -- Vdc Collector - Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75 -- Vdc Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 -- Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX -- 10 nAdc Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0, TA = 150C) ICBO -- -- 0.01 10 Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO -- 10 nAdc Collector Cutoff Current (VCE = 10 V) ICEO -- 10 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBEX -- 20 nAdc Characteristic OFF CHARACTERISTICS Motorola Small-Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 Adc 1 P2N2222A ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 35 50 75 35 100 50 40 -- -- -- -- 300 -- -- -- -- 0.3 1.0 0.6 -- 1.2 2.0 fT 300 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo -- 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo -- 25 pF 2.0 0.25 8.0 1.25 -- -- 8.0 4.0 50 75 300 375 5.0 25 35 200 ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = -55C) (IC = 150 mAdc, VCE = 10 Vdc)(1) (IC = 150 mAdc, VCE = 1.0 Vdc)(1) (IC = 500 mAdc, VCE = 10 Vdc)(1) hFE Collector - Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base - Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) -- Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product(2) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rbCc -- 150 ps NF -- 4.0 dB (VCC = 30 Vdc, VBE(off) = -2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) td -- 10 ns tr -- 25 ns (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) (Figure 2) ts -- 225 ns tf -- 60 ns Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 k, f = 1.0 kHz) k X 10- 4 -- mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2. fT is defined as the frequency at which |hfe| extrapolates to unity. 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data P2N2222A SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 0 -2 V 200 1.0 to 100 s, DUTY CYCLE 2.0% +16 V 0 1 k < 2 ns 1k -14 V CS* < 10 pF < 20 ns Figure 1. Turn-On Time CS* < 10 pF 1N914 Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. -4 V Figure 2. Turn-Off Time 1000 700 500 hFE , DC CURRENT GAIN 200 TJ = 125C 300 200 25C 100 70 50 -55C 30 VCE = 1.0 V VCE = 10 V 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 700 1.0 k VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 TJ = 25C 0.8 0.6 IC = 1.0 mA 10 mA 150 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 10 20 30 50 Figure 4. Collector Saturation Region Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 P2N2222A 200 500 IC/IB = 10 TJ = 25C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 ts = ts - 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 500 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn - On Time IC = 1.0 mA, RS = 150 500 A, RS = 200 100 A, RS = 2.0 k 50 A, RS = 4.0 k 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 IC = 50 A 100 A 500 A 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances 20 30 50 f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 30 CAPACITANCE (pF) 500 10 8.0 4 300 Figure 6. Turn - Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25C 300 t, TIME (ns) t, TIME (ns) 100 70 50 500 VCE = 20 V TJ = 25C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current-Gain Bandwidth Product Motorola Small-Signal Transistors, FETs and Diodes Device Data P2N2222A 1.0 +0.5 TJ = 25C 0 COEFFICIENT (mV/ C) V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 1.0 V 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) - 0.5 - 1.0 - 1.5 RqVB for VBE - 2.0 VCE(sat) @ IC/IB = 10 0 - 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k Figure 11. "On" Voltages Motorola Small-Signal Transistors, FETs and Diodes Device Data 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 12. Temperature Coefficients 5 P2N2222A PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 SECTION X-X N N CASE 029-04 (TO-226AA) ISSUE AD INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 *P2N2222A/D* P2N2222A/D Motorola Small-Signal Transistors, FETs and Diodes Device Data