1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 40 Vdc
Collector–Base Voltage VCBO 75 Vdc
Emitter–Base Voltage VEBO 6.0 Vdc
Collector Current — Continuous IC600 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD625
5.0 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD1.5
12 Watts
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg –55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
q
JA 200 °C/W
Thermal Resistance, Junction to Case R
q
JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0) V(BR)CEO 40 — Vdc
Collector–Base Breakdown Voltage
(IC = 10
m
Adc, IE = 0) V(BR)CBO 75 — Vdc
Emitter–Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0) V(BR)EBO 6.0 — Vdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) ICEX — 10 nAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 150°C)
ICBO —
—0.01
10
µAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0) IEBO — 10 nAdc
Collector Cutoff Current
(VCE = 10 V) ICEO — 10 nAdc
Base Cutoff Current
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc) IBEX — 20 nAdc
Order this document
by P2N2222A/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER
P2N2222A
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C)
(IC = 150 mAdc, VCE = 10 Vdc)(1)
(IC = 150 mAdc, VCE = 1.0 Vdc)(1)
(IC = 500 mAdc, VCE = 10 Vdc)(1)
hFE 35
50
75
35
100
50
40
—
—
—
—
300
—
—
—
Collector–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat) —
—0.3
1.0
Vdc
Base–Emitter Saturation Voltage(1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat) 0.6
—1.2
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT300 — MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cobo — 8.0 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo — 25 pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hie 2.0
0.25 8.0
1.25
kΩ
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hre —
—8.0
4.0
X 10–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 50
75 300
375
—
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
hoe 5.0
25 35
200
m
mhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) rb′Cc— 150 ps
Noise Figure
(IC = 100
m
Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF— 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC = 30 Vdc, VBE(off) = –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
td— 10 ns
Rise Time
(VCC = 30 Vdc, VBE(off) = –2.0 Vdc,
IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1)
tr— 25 ns
Storage Time
(VCC = 30 Vdc, IC = 150 mAdc,
IB1 = IB2 = 15 mAdc) (Figure 2)
ts— 225 ns
Fall Time
IB1 = IB2 = 15 mAdc) (Figure 2)
tf— 60 ns
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
P2N2222A
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 1. Turn–On Time Figure 2. Turn–Off Time
SWITCHING TIME EQUIVALENT TEST CIRCUITS
Scope rise time < 4 ns
*Total shunt capacitance of test jig,
connectors, and oscilloscope.
+16 V
–2 V < 2 ns
0
1.0 to 100
µ
s,
DUTY CYCLE
≈
2.0%
1 k
Ω
+30 V
200
CS* < 10 pF
+16 V
–14 V
0
< 20 ns
1.0 to 100
µ
s,
DUTY CYCLE
≈
2.0%
1 k
+30 V
200
CS* < 10 pF
–4 V
1N914
1000
10
20
30
50
70
100
200
300
500
700
1.0 k0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
hFE, DC CURRENT GAINVCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
TJ = 125
°
C
TJ = 25
°
C
25
°
C
–55
°
C
IC = 1.0 mA 10 mA 150 mA 500 mA
VCE = 1.0 V
VCE = 10 V
P2N2222A
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 5. Turn–On Time
IC, COLLECTOR CURRENT (mA)
70
100
200
50
t, TIME (ns)
10 20 70
5.0
100
5.0 7.0 30 50 200
10
30
7.0
20
IC/IB = 10
TJ = 25
°
C
tr @ VCC = 30 V
td @ VEB(off) = 2.0 V
td @ VEB(off) = 0
3.0
2.0 300 500
500
t, TIME (ns)
5.0
7.0
10
20
30
50
70
100
200
300
Figure 6. Turn–Off Time
IC, COLLECTOR CURRENT (mA)
10 20 70 1005.0 7.0 30 50 200 300 500
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25
°
C
t
′
s = ts – 1/8 tf
tf
Figure 7. Frequency Effects
f, FREQUENCY (kHz)
4.0
6.0
8.0
10
2.0
0.1
Figure 8. Source Resistance Effects
RS, SOURCE RESISTANCE (OHMS)
NF, NOISE FIGURE (dB)
1.0 2.0 5.0 10 20 50
0.2 0.5
0100
NF, NOISE FIGURE (dB)
0.01 0.02 0.05
RS = OPTIMUM
RS = SOURCE
RS = RESISTANCE
IC = 1.0 mA, RS = 150
Ω
500
µ
A, RS = 200
Ω
100
µ
A, RS = 2.0 k
Ω
50
µ
A, RS = 4.0 k
Ω
f = 1.0 kHz
IC = 50
µ
A
100
µ
A
500
µ
A
1.0 mA
4.0
6.0
8.0
10
2.0
050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
Figure 9. Capacitances
REVERSE VOLTAGE (VOLTS)
3.0
5.0
7.0
10
2.00.1
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 50
0.2 0.3 0.5 0.7
Ccb
20
30
Ceb
Figure 10. Current–Gain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
70
100
200
300
50
500
fT, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
VCE = 20 V
TJ = 25
°
C
P2N2222A
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 11. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
V, VOLTAGE (VOLTS)
0
TJ = 25
°
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
Figure 12. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
–0.5
0
+0.5
COEFFICIENT (mV/ C)
–1.0
–1.5
–2.5
°
R
q
VC for VCE(sat)
R
q
VB for VBE
0.1 1.0 2.0 5.0 10 20 50
0.2 0.5 100 200 500 1.0 k
1.0 V
–2.0
0.1 1.0 2.0 5.0 10 20 500.2 0.5 100 200 500
P2N2222A
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 or 602–303–5454 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
P2N2222A/D
*P2N2222A/D*
◊
