2SD1947A TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD1947A High-Current Switching Applications Lamp, Solenoid Drive Applications Unit: mm * High DC current gain: hFE = 500 to 1500 (IC = 1 A) * Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 7 V DC IC 10 Pulse ICP 15 IB 2 Collector current Base current Ta = 25C Collector power dissipation Tc = 25C Junction temperature Storage temperature range PC 2.0 40 A A W Tj 150 C Tstg -55 to 150 C JEDEC JEITA TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base Emitter 1 2006-11-21 2SD1947A Electrical Characteristics (Tc = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 100 V, IE = 0 10 A Emitter cut-off current IEBO VEB = 7 V, IC = 0 10 A V (BR) CEO IC = 50 mA, IB = 0 100 V Collector-emitter breakdown voltage hFE (1) VCE = 1 V, IC = 1 A 500 1500 hFE (2) VCE = 1 V, IC = 5 A 150 Collector-emitter saturation voltage VCE (sat) IC = 5 A, IB = 0.05 A 0.3 V Base-emitter saturation voltage VBE (sat) IC = 5 A, IB = 0.05 A 1.2 V IE = 5 A, IB = 0 2.0 V VCE = 5 V, IC = 1 A 70 MHz VCB = 10 V, IE = 0, f = 1 MHz 160 pF 0.5 6.0 1.0 DC current gain Transition frequency Collector output capacitance Turn-on time VECF fT Cob Output ton Input Storage time 20 s tstg IB2 IB2 IB1 Switching time Fall time IB1 6 Collector-emitter forward voltage s VCC = 30 V tf IB1 = -IB2 = 0.05 A, duty cycle 1% Marking D1947A Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-21 2SD1947A IC - VCE VCE - IC 16 1.2 60 50 40 Common emitter Tc = 25C 20 15 10 8 6 4 1.0 4 IB = 2 mA 4 8 12 Collector-emitter voltage 16 Tc = 25C 10 20 40 60 80 100 200 0.4 300 0.2 0 0 20 2 4 VCE (V) 6 8 10 VCE - IC 80 VCE (V) 60 200 150 0.8 0.6 100 0.4 1.0 (A) 300 10 40 20 60 80 150 0.6 100 0.4 200 0.2 300 ) 0.2 Tc = -55C IB = 5 mA 0.8 Collector-emitter voltage VCE (V) Collector-emitter voltage Ta = 100C 40 16 Common emitter Common emitter IB = 5 mA 20 14 VCE - IC 1.2 10 12 Collector current IC 1.2 1.0 150 0.6 0 0 0 Common emitter IB = 5 mA 0.8 Collector-emitter voltage Collector current IC (A) 30 12 VCE (V) 80 0 0 2 4 6 8 10 Collector current IC 12 14 0 0 16 2 4 (A) 6 8 10 12 Collector current IC 14 16 (A) VCE (sat) - IC 3 hFE - IC Common emitter Collector-emitter saturation voltage VCE (sat) (V) 3000 DC current gain hFE Common emitter 1000 VCE = 1 V Tc = 100C 25 500 -55 300 100 50 30 0.1 IC/IB = 100 1 0.5 0.3 Tc = 100C 0.1 25 0.05 -55 0.03 0.3 0.5 1 3 Collector current IC 5 10 30 0.1 (A) 0.3 0.5 1 3 Collector current IC 3 5 10 30 (A) 2006-11-21 2SD1947A VBE (sat) - IC IC - VBE 10 16 Common emitter IC/IB = 100 VCE = 1 V 1 (A) 3 Tc = -55C 0.5 0.3 0.1 0.1 25 100 12 Collector current IC Base-emitter saturation voltage VBE (sat) (V) Common emitter 5 0.3 0.5 1 3 5 Collector current IC 10 8 4 Tc = 100C 25 -55 30 0 0 (A) 0.4 0.8 1.2 Base-emitter voltage 1.6 2.0 VBE (V) rth - tw 100 Transient thermal resistance rth (C/W) Curves should be applied in thermal limited area. 30 (2) (single nonrepetitive pulse) (1) Infinite heat sink (Tc = 25C) (2) No heat sink 10 3 (1) 1 0.3 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area 30 IC max (pulsed)* 100 ms* Collector current IC (A) 10 5 10 ms* 1 ms* IC max (continuous) 100 s* 3 DC operation Tc = 25C 1 0.5 0.3 *: Single nonrepetitive pulse Tc = 25C Curves must be derated 0.1 linearly with increase in temperature. 0.05 1 3 5 10 VCEO max 30 Collector-emitter voltage 50 100 300 VCE (V) 4 2006-11-21 2SD1947A RESTRICTIONS ON PRODUCT USE 20070701-EN * The information contained herein is subject to change without notice. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-21