2SD1947A
2006-11-21
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD1947A
High-Current Switching Applications
Lamp, Solenoid Drive Applications
• High DC current gain: hFE = 500 to 1500 (IC = 1 A)
• Low collector saturation voltage: VCE (sat) = 0.3 V (max) (IC = 5 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 100 V
Collector-emitter voltage VCEO 100 V
Emitter-base voltage VEBO 7 V
DC IC 10
Collector current
Pulse ICP 15
A
Base current IB 2 A
Ta = 25°C 2.0
Collector power
dissipation Tc = 25°C
PC 40
W
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-10R1A
Weight: 1.7 g (typ.)
Base
Emitter
Collector
2SD1947A
2006-11-21
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Electrical Characteristics (Tc = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO VCB = 100 V, IE = 0 ― ― 10 μA
Emitter cut-off current IEBO VEB = 7 V, IC = 0 ― ― 10 μA
Collector-emitter breakdown voltage V (BR) CEO IC = 50 mA, IB = 0 100 ― ― V
hFE (1) V
CE = 1 V, IC = 1 A 500 ― 1500
DC current gain
hFE (2) V
CE = 1 V, IC = 5 A 150 ― ―
Collector-emitter saturation voltage VCE (sat) I
C = 5 A, IB = 0.05 A ― ― 0.3 V
Base-emitter saturation voltage VBE (sat) I
C = 5 A, IB = 0.05 A ― ― 1.2 V
Collector-emitter forward voltage VECF IE = 5 A, IB = 0 ― ― 2.0 V
Transition frequency fT VCE = 5 V, IC = 1 A ― 70 ― MHz
Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ― 160 ― pF
Turn-on time ton ― 0.5 ―
Storage time tstg ― 6.0 ―
Switching time
Fall time tf
IB1 = −IB2 = 0.05 A, duty cycle ≤ 1%
― 1.0 ―
μs
Marking
IB1
20 μs
VCC = 30 V
Output
6 Ω
IB2
IB1
Input
IB2
Lot No.
A
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
D1947A
Part No. (or abbreviation code)
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Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
)
Collector-emitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
VCE – IC
Collector-emitter voltage VCE (V)
Collector current IC (A)
hFE – IC
DC current gain hFE
Collector current IC (A)
VCE (sat) – IC
16
Collector-emitter saturation voltage
VCE (sat) (V)
0
0
Common emitter
Ta = 100°C
0.2
0.4
0.6
0.8
1.0
1.2
2 4 6 8 10 12 14 16
100
IB = 5 mA
10 20 40 60 80 150
200
300
0
0
IB = 2 mA
Common emitter
Tc = 25°C
4
10
4
8
12
4 8 12 16 20
15
20
30
40
50 60
80
6
0
0.1
Common emitter
VCE = 1 V
30
50
100
300
500
1000
3000
0.3 0.5 1 3 5 10 30
−55
25
Tc = 100°C
Common emitter
IC/IB = 100
0.1
0.03
0.05
0.1
0.3
0.5
1
3
0.3 0.5 1 3 5 10 30
−55
25
Tc = 100°C
Common emitter
Tc = 25°C
0
0
100
0.2
0.4
0.6
0.8
1.0
1.2
2 4 6 8 10 12 14 16
IB = 5 mA
10 20 40 60 80 150
200
300
Common emitter
Tc = −55°C
0
0
0.2
0.4
0.6
0.8
1.0
1.2
2 4 6 8 10 12 14 16
100
IB = 5 mA
10 20 40 60 80 150
200
300
2SD1947A
2006-11-21
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Safe Operating Area
Collector-emitter voltage VCE (V)
Collector current IC (A)
Collector current IC (A)
VBE (sat) – IC
Base-emitter saturation voltage
VBE (sat) (V)
Base-emitter voltage VBE (V)
IC – VBE
Collector current IC (A)
0
0
4
8
12
16
0.4 0.8 1.2 1.6 2.0
Common emitter
VCE = 1 V
−5525Tc = 100°C
0.1
0.1
Common emitter
IC/IB = 100
0.3 0.5 1 3 5 10 30
0.3
0.5
1
3
5
10
100 25
Tc = −55°C
1 3 5 10 30 50 100 300
0.05
0.1
0.3
0.5
1
3
5
10
30
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
10 ms*
100 μs*
IC max (pulsed)*
IC max
(continuous)
100 ms*
1 ms*
DC operation
Tc = 25°C
VCEO max
Pulse width tw (s)
rth – tw
Transient thermal resistance rth (°C/W)
0.001 1000
10
100
0.01 0.1
30
0.3
3
1
100 10 1
0.1
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
(1) Infinite heat sink (Tc = 25°C)
(2) No heat sink
(1)
(2)
2SD1947A
2006-11-21
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RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
