2SC 0D MM 4235405 OOO4915 & MMSIEG . 729-23 PNP Silicon Planar Transistor 2 N 4033 SIEMENS AKTIENGESELLSCHAF 2 N 4033 is an epitaxial PNP silicon planar transistor in TO 39 case (5 C 3 DIN 41873). The collector is electrically connected to the case. The transistor is particularly intended for use in AF amplifiers and for AF switching applications up to 1A. Type | Ordering code = 2N 4033 | 062702-S154 | Approx. weight 1.5 g Dimensions in mm Maximum ratings Collector-base voltage -Vceo 80 Vv Collector-emitter voltage ~Vceo 80 Vv Emitter-base voltage Vepo 5 Vv Collector current Ic 1 A Junction temperature 7 200 c Storage temperature range Tatg -65 to +200 C Total power dissipation (Tamp 25 C) Prot 0.8 WwW Total power dissipation (Tzase $ 25 C) Prot 4 Ww Thermal resistance Junction to ambient air Rina $220 K/W Junction to case Rthic 344 K/W 2277 B-04 ,. 961 Hk AM oe25C D M 8235605 OOO4FI1b & MESIEG 25C 04916 0 7LQG-93 2.N 4033 SIEMENS AKTIENGESELLSCHAF Static characteristics (T,,p = 25 C) Collector-base breakdown voltage (-Ig = 10 nA) Viericao | >80 Vv Collector-emitter breakdown voltage (-Jo = 10 mA) Vier)ceo >80 Vv 3 Emitter-base breakdown voltage : (~J_ = 10 pA) Vierjeso | >5 V Collector-emitter saturation voltage (-Ic = 150 mA, lI, = 15 mA) ~VeEsst <0.15 Vv (-Jg = 500 mA, Jg = 50 mA) VcEsat <0.5 Vv Base-emitter saturation voltage (-Ig = 150 mA, Ig = 15 mA) Veesat <0.9 Vv (-Jg = 500 mA, Jg = 50 mA) ~Veesat <14.1 Vv Collector cutoff current . (~Vcgo = 60 V) Icpo <50 nA (~Veso = 60V, Tamb = 160C) Icao <50 pA Emitter cutoff current (~Vego = 5 V) ~lego <10 mA DC current gain (-VcE =6V, ~Ic = 100 pA) hee >75 - (-Vce =5V, ~lg = 1 mA) hee > 25 - (Voe = 5 V, ~Ic = 100 mA) hee 100 to 300 - (-Vee = 5 V, ~ig = 100 MA, Tamp = 55 C) hee >40 - (Vee = 5 V, ~ig = 500 mA) hee | >70 ~ Dynamic characteristics (Tamp = 25 C) Transition frequency (Vce = 10 V, Jg = 50 mA, f = 100 MHz) ag > 150 MHz Collector-base capacitance (-Vego = 10 V, f= 1 MHz) Ccso <20 pF Emitter-base capacitance (-Vego = 0.5 V, f = 1 MHz) Ceso <110 . pF Switching times: (-Vec =30V, ~Ic =500mA, Ih) = Ig2 =50 mA) Turn-on time ton <100 ns Storage time ts <350 ns Fall time t <50 ns 962 3278 B-0525C D M 8235605 0004527 T MESIEG ~ 290 04917 DF2 RI-2B on 4033 SIEMENS AKTIENGESELLSCHAF Total perm. power dissipation Permissible pulse toad net (Ves = pra meter Tihuc = f(t); = parameter 5 vos ater he , fot atte sen peach AA An auie: aoe wf of ot ow wo? wt ws f Pennissible operating range Pernissible operating range A Te =! Weeds (Tessa = 60C) A Io =f (Vee); (Tease = 125C) s= nN NeowgEe 8 fs wv 2279 B-06 963 Wee A at att, nn oteesc D) = 8235605 00045918 4 MESIEG . 250 04918 - STEMENS AKTIENGESELLSCHAF OC current gain bre = f (Ic) Vee = 5 V: Tamp = parameter 10 Arg 10 10 0 10' 10 19 10! 10 10?mA _P-ly Colfactor-amittar saturation voltage mA Vceset = Flic): Ape = 10 I 10V Vest 964 ae ee 2280 B-07 ene -- 4918 0= I 7-24-23 a a033 ! i Coltectar cutoff current versus temperature Teao = f Tamp) 3 TA Veg = j aw 3 lexg 10 0 50 100 {50C Tang Base-emitter saturation voltage mA Vacsat =f (2c); Hee = 10; Vee = 1 10 0 05 -15V Ysa4-2 25C D MM 8235605 O004919 3 MESIEG 25C 04917 ~ O-7~29-aS STEMENS AKTIENGESELLSCHAF Collector current Jc = f (Vee) ma Vee=1 10? 5 t t 5 15V > Noe Test circuit for switching times Ves Vic 1Dus WEL fins 1, <l5ns R508 2281 B-08 * IEG . Miz 0 | 2 N 4033 Transition frequancy fy = f (Ic) Veg = 10V & i * ; 0 5 5 5 tm 965