© 2003 IXYS All rights reserved
IXFE 180N20 VDSS = 200 V
ID25 = 158 A
RDS(on) = 12 m
ΩΩ
ΩΩ
Ω
trr < 250 ns
Features
•Conforms to SOT-227B outline
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Low package inductance
•Fast intrinsic Rectifier
•Encapsulating epoxy meets
UL 94 V-0, flammability classification
Applications
•DC-DC converters
•Battery chargers
•Switched-mode and resonant-mode
power supplies
•DC choppers
•Temperature and lighting controls
Advantages
•Easy to mount
•Space savings
•High power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 200 V
VGH(th) VDS = VGS, ID = 8 mA 2 4 V
IGSS VGS = ±20 VDC, VDS = 0 ±200 nA
IDSS VDS = VDSS TJ = 25°C 100 µA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 12 mΩ
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC = 25°C, Chip capability 158 A
IL(RMS) Terminal current limit 100 A
IDM TC = 25°C, pulse width limited by TJM 720 A
IAR TC = 25°C 100 A
EAR TC = 25°C64mJ
EAS TC = 25°C4J
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 500 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL≤ 1 mA t = 1 s 3000 V~
MdMounting torque 1.5/13 Nm/lb.in.
Terminal connection torque 1.5/13 Nm/lb.in.
Weight 19 g
HiPerFETTM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Preliminary Data Sheet
DS99040(04/03)
D
S
G
S
G = Gate D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
ISOPLUS 227TM (IXFE)
S
G
S
D
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFE 180N20
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 15 V; ID = 60A, pulse test 70 95 S
Ciss 14400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3200 pF
Crss 960 pF
td(on) 55 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 85 ns
td(off) RG= 1 Ω (External), 180 ns
tf36 ns
Qg(on) 380 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 100 nC
Qgd 170 nC
RthJC 0.25 K/W
RthCK 0.05 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 180 A
ISM Repetitive; 720 A
pulse width limited by TJM
VSD IF = 100A, VGS = 0 V, 1.2 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 50A, -di/dt = 100 A/µs, VR = 100 V TJ = 25°C 250 ns
QRM TJ = 25°C 1.5 µC
IRM 10 A
ISOPLUS-227 B
