HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 180N20 VDSS ID25 RDS(on) t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data Sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 200 V VDGR TJ = 25C to 150C; RGS = 1 M 200 V VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25C, Chip capability 158 A IL(RMS) Terminal current limit 100 A IDM TC = 25C, pulse width limited by TJM 720 A IAR TC = 25C 100 A EAR TC = 25C 64 mJ EAS TC = 25C 4 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 5 V/ns PD TC = 25C 500 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C 2500 3000 V~ V~ TJ VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. Weight = 200 V = 158 A = 12 m < 250 ns 19 ISOPLUS 227TM (IXFE) S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features *Conforms to SOT-227B outline *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) rated *Low package inductance *Fast intrinsic Rectifier * Encapsulating epoxy meets UL 94 V-0, flammability classification g Applications Symbol Test Conditions VDSS VGS = 0 V, ID = 3 mA 200 VGH(th) VDS = VGS, ID = 8 mA 2 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) V GS = 10 V, ID = 0.5 * ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2003 IXYS All rights reserved Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ = 25C TJ = 125C V 4 V 200 nA 100 2 A mA 12 m * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density DS99040(04/03) IXFE 180N20 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. gfs VDS = 15 V; ID = 60A, pulse test 70 Ciss Coss 95 S 14400 pF 3200 pF Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 960 pF td(on) 55 ns 85 ns 180 ns 36 ns 380 nC 100 nC 170 nC tr VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 td(off) RG = 1 (External), tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd RthJC 0.25 RthCK 0.05 Source-Drain Diode ISOPLUS-227 B K/W K/W Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 180 A ISM Repetitive; pulse width limited by TJM 720 A VSD IF = 100A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % 1.2 V t rr QRM IRM IF = 50A, -di/dt = 100 A/s, VR = 100 V TJ = 25C TJ = 25C 250 1.5 10 ns C A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343