FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4
February 2012
FODM121 Series, FODM124, FODM2701, FODM2705
4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Features
■
More than 5mm creepage/clearance
■
Compact 4-pin surface mount package
(2.4mm maximum standoff height)
■
Current Transfer Ratio in selected groups
DC Input:
FODM121: 50–600% FODM2701: 50–300%
FODM121A: 100–300% FODM124: 100% MIN
FODM121B: 50–150%
FODM121C: 100–200%
AC Input:
FODM2705: 50–300%
■
Available in tape and reel quantities of 2500
■
Applicable to Infrared Ray reflow (260°C max, 10 sec.)
■
C-UL, UL and VDE* certifications
*option ‘V’ required
Applications
■
Digital logic inputs
■
Microprocessor inputs
■
Power supply monitor
■
Twisted pair line receiver
■
Telephone line receiver
Description
The FODM124, FODM121 series, and FODM2701
consists of a gallium arsenide infrared emitting diode
driving a phototransistor in a compact 4-pin mini-flat
package. The lead pitch is 2.54mm. The FODM2705
consists of two gallium arsenide infrared emitting diodes
connected in inverse parallel for AC operation.
Package Dimensions
4.40±0.20
2.54
3.85±0.20
2.00±0.20
0.10±0.10
0.40±0.10
5.30±0.30
7.00+0.2
–0.7
0.20±0.05
1
2
4
3EMITTER
Equivalent Circuit
FODM121, FODM124, FODM2701
Equivalent Circuit
FODM2705
COLLECTORANODE
CATHODE
1
2
4
3EMITTER
COLLECTORANODE
CATHODE
Note:
All dimensions are in millimeters.
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 2
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Electrical Characteristics
(T
A
= 25°C)
Individual Component Characteristics
Symbol Parameter Value Units
TOTAL PACKAGE
T
STG
Storage Temperature -40 to +125 °C
T
OPR
Operating Temperature -40 to +110 °C
EMITTER
I
F (avg)
Continuous Forward Current 50 mA
I
F (pk)
Peak Forward Current (1µs pulse, 300 pps.) 1 A
V
R
Reverse Input Voltage 6 V
P
D
Power Dissipation 70 mW
Derate linearly (above 25°C) 0.65 mW/°C
DETECTOR
Continuous Collector Current 80 mA
P
D
Power Dissipation 150 mW
Derate linearly (above 25°C) 2.0 mW/°C
V
CEO
Collector-Emitter Voltage FODM2701, FODM2705 40 V
FODM121 Series, FODM124 80
V
ECO
Emitter-Collector Voltage 7 V
Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit
EMITTER
V
F
Forward Voltage I
F
= 10mA FODM121 Series,
FODM124
1.0 1.3 V
I
F
= 5mA FODM2701 1.4
I
F
= ±5mA FODM2705
I
R
Reverse Current V
R
= 5V FODM2701 5 µA
FODM121 Series
FODM124
DETECTOR
BV
CEO
Breakdown Voltage
Collector to Emitter
I
C
= 1mA, I
F
= 0 FODM121 Series,
FODM124
80 V
FODM2701,
FODM2705
40
BV
ECO
Emitter to Collector I
E
= 100µA, I
F
= 0 All 7 V
I
CEO
Collector Dark
Current
V
CE
= 40V, I
F
= 0 All 100 nA
C
CE
Capacitance V
CE
= 0V, f = 1MHz All 10 pF
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 3
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Electrical Characteristics
(Continued)
(T
A
= 25°C)
Transfer Characteristics
Isolation Characteristics
*All typicals at T
A
= 25°C
Note:
1. Steady state isolation voltage, V
ISO
, is an internal device dielectric breakdown rating. For this test, pins 1 and 2 are
common, and pins 3 and 4 are common.
Symbol Characteristic Test Conditions Device Min. Typ.* Max. Unit
CTR DC Current Transfer Ratio I
F
= ±5mA, V
CE
= 5V FODM2705 50 300 %
I
F
= 5mA, V
CE
= 5V FODM2701 50 300
I
F
= 5mA, V
CE
= 5V FODM121 50 600
FODM121A 100 300
FODM121B 50 150
FODM121C 100 200
I
F
= 1mA, V
CE
= 0.5V FODM124 100 1200
I
F
= 0.5mA, V
CE
= 1.5V 50
CTR Symmetry I
F
= ±5mA, V
CE
= 5V FODM2705 0.3 3.0
V
CE (SAT)
Saturation Voltage I
F
= ±10mA, I
C
= 2mA FODM2705 0.3 V
I
F
= 10mA, I
C
= 2mA FODM2701 0.3
I
F
= 8mA, I
C
= 2.4mA FODM121
Series
0.4
I
F
= 1mA, I
C
= 0.5mA FODM124 0.4
t
r
Rise Time (Non-Saturated) I
C
= 2mA, V
CE
= 5V,
R
L
= 100
Ω
All 3 µs
t
f
Fall Time (Non-Saturated) I
C
= 2mA, V
CE
= 5V,
R
L
= 100
Ω
All 3 µs
Characteristic Test Conditions Symbol Device Min. Typ.* Max. Unit
Steady State Isolation Voltage
(1)
1 Minute V
ISO
All 3750 VRMS
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 4
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Typical Performance Curves
Fig. 1 Forward Current vs. Forward Voltage
VF - Forward Voltage (V)
IF - Forward Current (mA)
VCE(sat) - Collector-Emitter Saturation Voltage(V)
CTR – Current Transfer Ratio (%)
0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
10
100
T
A = 110oC
70oC
25oC0oC
-40oC
Fig. 2 Collector-Emitter Saturation Voltage vs.
Ambient Temperature (FODM121/2701/2705)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
IF = 10mA
IC = 2mA
IF = 8mA
IC = 2.4mA
Fig. 3 Current Transfer Ratio vs. Forward Current
(FODM121/2701/2705)
IF - Forward Current (mA)
0.1 1 10 100
10
100
TA = 25oC
VCE = 5V
VCE = 10V
Fig. 4 Collector Current vs. Forward Current
(FODM121/2701/2705)
IF - Forward Current (mA)
0.1 1 10 100
0.1
1
10
100
TA = 25oC
VCE = 5V
VCE = 10V
Fig. 5 Collector Current vs. Ambient Temperature
(FODM121/2701/2705)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.01
0.1
1
10
100
VCE = 5V
IF = 0.5mA
IF = 1mA
IF = 5mA
IF = 10mA
IF = 25mA
Fig. 6 Collector Current vs. Collector-Emitter
Voltage (FODM121/2701/2705)
VCE - Collector-Emitter Voltage (V)
0246810
0
10
20
30
40
TA = 25oC
IF = 50mA
IF = 1mA
IF = 5mA
IF = 10mA
IF = 20mA
IF = 30mA
IF = 40mA
IC - Collector Current (mA)
IC - Collector Current (mA)
IC - Collector Current (mA)
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 5
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
CTR – Current Transfer Ratio (%)
CTR – Normalized Current Transfer Ratio (%)
ICEO - Collector Dark Current (nA)Switching Time (µs)
Fig 7. Collector Dark Current vs. Ambient
Temperature (FODM121/2701/2705)
TA - Ambient Temperature (°C) TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.1
1
10
100
1000
10000
VCE = 40V
Fig. 8 Normalized Current Transfer Ratio vs.
Ambient Temperature (FODM121/2701/2705)
-40 -20 0 20 40 60 80 100 120
20
40
60
80
100
120
140
160
IF = 5mA
VCE = 5V
Normalized to TA = 25
oC
Fig. 9 Switching Time vs. Load Resistance
(FODM121/2701/2705)
RL - Load Resistance (kΩ)
110100
1
10
100
1000
VCC = 5V
TA = 25
oC
tOFF
tON
IF = 16mA
tS
IF = 5mA
Fig. 10 Collector-Emitter Saturation Voltage
vs. Ambient Temperature (FODM124)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
IF = 1mA
IC = 0.5mA
Fig. 11 Current Transfer Ratio vs.
Forward Current (FODM124)
I
F
- Forward Current (mA)
0.1 1 10
10
100
TA = 25°C
VCE = 0.5V
Fig 12. Collector Current vs. Forward Current
(FODM124)
IF - Forward Current (mA)
0.1 1 10
0.01
0.1
1
10
TA = 25°C
VCE = 0.5V
VCE(sat) - Collector-Emitter Saturation Voltage(V)
IC - Collector Current (mA)
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 6
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
CTR – Normalized Current Transfer Ratio (%)
Switching Time (µs)
I
C
- Collector Current (mA)
I
CEO
- Collector Dark Current (nA)
I
C
- Collector Current (mA)
Fig 13. Collector Current vs. Ambient Temperature
(FODM124)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.1
1
10
VCE = 0.5V
IF = 0.5mA
IF = 1mA
IF = 5mA IF = 10mA
IF = 2mA
Fig. 14 Collector Current vs. Collector-Emitter Voltage
(FODM124)
VCE - Collector-Emitter Voltage (V)
0.0 0.2 0.4 0.6 0.8 1.0
0
2
4
6
8
10
T
A = 25
o
C
IF = 0.5mA
IF = 1mA
IF = 5mA
IF = 10mA
IF = 2mA
Fig. 15 Collector Dark Current vs. Ambient
Temperature (FODM124)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
0.1
1
10
100
1000
10000 VCE = 40V
Fig. 16 Normalized Current Transfer Ratio vs.
Ambient Temperature (FODM124)
TA - Ambient Temperature (°C)
-40 -20 0 20 40 60 80 100 120
20
40
60
80
100
120
140
160
IF = 1mA,
VCE = 0.5V
Normalized to TA
= 25°C
Fig. 17 Switching Time vs. Load Resistance (FODM124)
RL - Load Resistance (kΩ)
110100
1
10
100
1000
V
CC = 5V
IF = 1mA
TA = 25°C
tOFF
tON
tS
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 7
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Ordering Information
Marking Information
Option Description
V VDE Approved
R2 Tape and Reel (2500 units)
R2V Tape and Reel (2500 units) and VDE Approved
1
2
6
4
35
Definitions
1Fairchild logo
2Device number
3 VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4 One digit year code
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
121
XVR
YY
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 8
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Carrier Tape Specifications
D
D
W
K
t
d
1
0PP
A
P
0
B0
0
2
E
F
W
1
0
Reel Diameter
Devices Per Reel
Max. Component Rotation or Tilt
Cover Tape Thickness
Cover Tape Width
Pocket Hole Dia.
Pocket Dimension
Pocket Location
Sprocket Hole Location
Sprocket Hole Dia.
Sprocket Hole Pitch
Tape Thickness
Pocket Pitch
Tape Width
Description Symbol Dimensions
2.54 Pitch
B
d
W1
D
K0
1
0
E
A
P
0
P
F
2
D
P
0
0
t
W
330 mm (13")
12.00±0.4
7.30±0.20
20° max
1.55±0.20
2.30±0.20
0.065±0.02
9.20
1.75±0.20
8.00±0.20
2.00±0.20
5.50±0.20
4.75±0.20
1.55±0.20
4.00±0.20
0.35±0.02
2500
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 9
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Footprint Drawing for PCB Layout
Note:
All dimensions are in mm.
0.80
6.50
2.54
1.00
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 10
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
Reflow Profile
Profile Freature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (t
S
) from (Tsmin to Tsmax) 60–120 seconds
Ramp-up Rate (t
L
to t
P
) 3°C/second max.
Liquidous Temperature (T
L
) 217°C
Time (t
L
) Maintained Above (T
L
) 60–150 seconds
Peak Body Package Temperature 260°C +0°C / –5°C
Time (t
P
) within 5°C of 260°C 30 seconds
Ramp-down Rate (T
P
to T
L
) 6°C/second max.
Time 25°C to Peak Temperature 8 minutes max.
Time (seconds)
Temperature (°C)
Time 25°C to Peak
260
240
220
200
180
160
140
120
100
80
60
40
20
0
TL
ts
tL
tP
TP
Tsma x
Tsmi n
120
Preheat Area
Max. Ramp-up Rate = 3°C/S
Max. Ramp-down Rate = 6°C/S
240 360
©2006 Fairchild Semiconductor Corporation www.fairchildsemi.com
FODMXXX Rev. 1.1.4 11
FODM121 Series, FODM124, FODM2701, FODM2705 — 4-Pin Full Pitch Mini-Flat Package Transistor Output Optocouplers
