UniFETTM FDP17N60N / FDPF17N60NT N-Channel MOSFET 600V, 17A, 0.34 Features Description * RDS(on) = 0.29 ( Typ.)@ VGS = 10V, ID = 8.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. * Low Gate Charge ( Typ. 48nC) * Low Crss ( Typ. 23pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. * Fast Switching * 100% Avalanche Tested * Improved dv/dt Capability * RoHS Compliant D G G D S TO-220 FDP Series GD S TO-220F FDPF Series S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) FDP17N60N FDPF17N60NT 600 Units V 30 V 17 17* 10.2 10.2* IDM Drain Current EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 17 A EAR Repetitive Avalanche Energy (Note 1) 24.5 mJ dv/dt Peak Diode Recovery dv/dt Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds - Derate above 25oC 68* A 838 (Note 3) (TC = 25oC) PD TL 68 A mJ 10 V/ns 245 62.5 W 2.0 0.5 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter RJC Thermal Resistance, Junction to Case RCS Thermal Resistance, Case to Heat Sink Typ. RJA Thermal Resistance, Junction to Ambient (c)2009 Fairchild Semiconductor Corporation FDP17N60N/FDPF17N60NT Rev. A FDP17N60N FDPF17N60NT 1 0.51 2.0 - - 62.5 62.5 Units o C/W www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET July 2009 Device Marking FDP17N60N Device FDP17N60N Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF17N60NT FDPF17N60NT TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 600 - - V - 0.8 - V/oC Off Characteristics BVDSS BVDSS TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250A, VGS = 0V, TC = 25oC ID = 250A, Referenced to 25oC VDS = 600V, VGS = 0V - - 1 VDS = 480V, VGS = 0V,TC = 150oC - - 10 VGS = 30V, VDS = 0V - - 100 3.0 - 5.0 V - 0.29 0.34 - 21 - S A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250A Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 8.5A VDS = 20V, ID = 8.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 480V ID = 17A VGS = 10V (Note 4, 5) - 2285 3040 pF - 310 410 pF - 23 35 pF - 48 65 nC - 13 - nC - 20 - nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300V, ID = 17A VGS = 10V, RGEN = 25 (Note 4, 5) - 48 106 ns - 79 168 ns - 128 266 ns - 62 134 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 74 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 68 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 17A - - 1.4 V trr Reverse Recovery Time - 575 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 17A dIF/dt = 100A/s - 7.2 - C (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.8mH, IAS = 17A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 17A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP17N60N/FDPF17N60NT Rev. A 2 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 200 10 *Notes: 1. 250s Pulse Test o 2. TC = 25 C ID, Drain Current[A] ID, Drain Current[A] 100 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V 100 Figure 2. Transfer Characteristics 1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 o Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage -55 C o 25 C 1 20 o 150 C 10 *Notes: 1. VDS = 20V 2. 250s Pulse Test 4 5 6 7 8 VGS, Gate-Source Voltage[V] 9 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.6 200 IS, Reverse Drain Current [A] RDS(ON) [], Drain-Source On-Resistance 100 0.5 0.4 VGS = 10V VGS = 20V 0.3 o o 150 C 25 C 10 *Notes: 1. VGS = 0V o 0.2 *Note: TC = 25 C 0 10 20 30 ID, Drain Current [A] 40 1 0.2 50 Figure 5. Capacitance Characteristics 1.4 10 VGS, Gate-Source Voltage [V] Ciss Capacitances [pF] 0.4 0.8 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 10000 1000 Coss 100 2. 250s Pulse Test *Note: 1. VGS = 0V 2. f = 1MHz Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 1 10 VDS, Drain-Source Voltage [V] FDP17N60N/FDPF17N60NT Rev. A 8 6 4 2 0 30 3 VDS = 120V VDS = 300V VDS = 480V *Note: ID = 17A 0 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Typical Performance Characteristics Figure 8. On-Resistance Variation vs. Temperature 1.18 1.15 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage Figure 7. Breakdown Voltage Variation vs. Temperature 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 0.85 -75 -50 0 50 100 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area -FDPF17N60NT 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 8.5A 0.5 0 50 100 o TJ, Junction Temperature [ C] 150 Figure 10. Maximum Drain Current vs. Case Temperature 20 10s 100s 1ms 10 ID, Drain Current [A] ID, Drain Current [A] 2.0 0.0 -75 -50 150 200 100 2.5 10ms DC 1 Operation in This Area is Limited by R DS(on) *Notes: 0.1 o 15 10 5 1. TC = 25 C o 0.01 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve -FDPF17N60NT Thermal Response [ZJC] 10 1 0.5 0.2 0.1 0.1 PDM 0.05 0.02 *Notes: 0.01 0.003 -5 10 FDP17N60N/FDPF17N60NT Rev. A t1 t2 o 1. ZJC(t) = 2.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) 0.01 Single pulse -4 10 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration [sec] 4 10 2 10 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Typical Performance Characteristics (Continued) FDP17N60N / FDPF17N60NT N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP17N60N/FDPF17N60NT Rev. A 5 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V V GS ( D r iv e r ) GS G S am e T ype as DUT V DD * d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d G a t e P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d 10V I F M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v / d t V V SD DD B o d y D io d e F o r w a r d V o lta g e D r o p FDP17N60N/FDPF17N60NT Rev. A 6 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Mechanical Dimensions TO-220 FDP17N60N/FDPF17N60NT Rev. A 7 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET Package Dimensions TO-220F Potted * Front/Back Side Isolation Voltage : 4000V Dimensions in Millimeters FDP17N60N/FDPF17N60NT Rev. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FDP17N60N/FDPF17N60NT Rev. A 9 www.fairchildsemi.com FDP17N60N / FDPF17N60NT N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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