July 2009
FDP17N60N / FDPF17N60NT N-Channel MOSFET
©2009 Fairchild Semiconductor Corporation
FDP17N60N/FDPF17N60NT Rev. A
www.fairchildsemi.com1
UniFET
TM
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Thermal Characteristics
Symbol Parameter FDP17N60N FDPF17N60NT Units
VDSS Drain to Source Voltage 600 V
VGSS Gate to Source Voltage ±30 V
IDDrain Current -Continuous (TC = 25oC) 17 17* A
-Continuous (TC = 100oC) 10.2 10.2*
IDM Drain Current - Pulsed (Note 1) 68 68* A
EAS Single Pulsed Avalanche Energy (Note 2) 838 mJ
IAR Avalanche Current (Note 1) 17 A
EAR Repetitive Avalanche Energy (Note 1) 24.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
PDPower Dissipation (TC = 25oC) 245 62.5 W
- Derate above 25oC2.00.5W/
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds 300 oC
Symbol Parameter FDP17N60N FDPF17N60NT Units
RθJC Thermal Resistance, Junction to Case 0.51 2.0
oC/WRθCS Thermal Resistance, Case to Heat Sink Typ. - -
RθJA Thermal Resistance, Junction to Ambient 62.5 62.5
FDP17N60N / FDPF17N60NT
N-Channel MOSFET
600V, 17A, 0.34Ω
Features
•R
DS(on) = 0.29Ω ( Typ.)@ VGS = 10V, ID = 8.5A
• Low Gate Charge ( Typ. 48nC)
•Low C
rss ( Typ. 23pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
•RoHS Compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
G
S
TO-220F
FDPF Series
G S
D
G D S
TO-220
FDP Series
*Drain current limited by maximum junction temperature
FDP17N60N / FDPF17N60NT N-Channel MOSFET
FDP17N60N/FDPF17N60NT Rev. A www.fairchildsemi.com
2
Package Marking and Ordering Information
Electrical Characteristics TC = 25oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking Device Package Reel Size Tape Width Quantity
FDP17N60N FDP17N60N TO-220 - - 50
FDPF17N60NT FDPF17N60NT TO-220F - - 50
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 600 - - V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250µA, Referenced to 25oC-0.8-V/
oC
IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0V - - 1 µA
VDS = 480V, VGS = 0V,TC = 150oC- - 10
IGSS Gate to Body Leakage Current VGS = ±30V, VDS = 0V - - ±100 nA
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 8.5A - 0.29 0.34 Ω
gFS Forward Transconductance VDS = 20V, ID = 8.5A (Note 4) -21-S
Ciss Input Capacitance VDS = 25V, VGS = 0V
f = 1MHz
- 2285 3040 pF
Coss Output Capacitance - 310 410 pF
Crss Reverse Transfer Capacitance - 23 35 pF
Qg(tot) Total Gate Charge at 10V
VDS = 480V ID = 17A
VGS = 10V
(Note 4, 5)
-4865nC
Qgs Gate to Source Gate Charge - 13 - nC
Qgd Gate to Drain “Miller” Charge - 20 - nC
td(on) Turn-On Delay Time
VDD = 300V, ID = 17A
VGS = 10V, RGEN = 25Ω
(Note 4, 5)
- 48 106 ns
trTurn-On Rise Time - 79 168 ns
td(off) Turn-Off Delay Time - 128 266 ns
tfTurn-Off Fall Time - 62 134 ns
ISMaximum Continuous Drain to Source Diode Forward Current - - 74 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 68 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 17A - - 1.4 V
trr Reverse Recovery Time VGS = 0V, ISD = 17A
dIF/dt = 100A/µs (Note 4)
- 575 - ns
Qrr Reverse Recovery Charge - 7.2 - µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.8mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 17A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP17N60N / FDPF17N60NT N-Channel MOSFET
FDP17N60N/FDPF17N60NT Rev. A www.fairchildsemi.com
3
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
0.1 1 10 20
0.1
1
10
100
200
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
ID, Drain Current[A]
VDS, Drain-Source Voltage[V]
456789
1
10
100
-55oC150oC
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
25oC
ID, Drain Current[A]
VGS, Gate-Source Voltage[V]
0 1020304050
0.2
0.3
0.4
0.5
0.6
*Note: TC = 25oC
VGS = 20V
VGS = 10V
RDS(ON) [Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.8 1.2 1.4
1
10
100
200
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
150oC
IS, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 30
10
100
1000
10000
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz Crss
Capacitances [pF]
VDS, Drain-Source Voltage [V] 0 1020304050
0
2
4
6
8
10
*Note: ID = 17A
VDS = 120V
VDS = 300V
VDS = 480V
VGS, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
FDP17N60N / FDPF17N60NT N-Channel MOSFET
FDP17N60N/FDPF17N60NT Rev. A www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation
vs. Temperature vs. Temperature
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
-FDPF17N60NT vs. Case Temperature
Figure 11. Transient Thermal Response Curve
-FDPF17N60NT
-75 -50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
*Notes:
1. VGS = 10V
2. ID = 8.5A
RDS(on), [Normalized]
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
-75 -50 0 50 100 150
0.85
0.90
0.95
1.00
1.05
1.10
1.15
1.18
*Notes:
1. VGS = 0V
2. ID = 250µA
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
TJ, Junction Temperature [oC]
1 10 100 1000
0.01
0.1
1
10
100
200
10µs
100µs
1ms
10ms
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Operation in This Area
is Limited by R DS(on)
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
DC
25 50 75 100 125 150
0
5
10
15
20
ID, Drain Current [A]
TC, Case Temperature [oC]
10
-5
10
-4
10
-3
10
-2
10
-1
11010
2
0.003
0.01
0.1
1
10
0.01
0.1
0.2
0.05
0.02
*Notes:
1. Z
θ
JC
(t) = 2.0
o
C/W Max.
2. Duty Factor, D= t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
0.5
Single pulse
Thermal Response
[
Z
θ
JC
]
Rectangular Pulse Duration [sec]
t
1
P
DM
t
2
FDP17N60N / FDPF17N60NT N-Channel MOSFET
FDP17N60N/FDPF17N60NT Rev. A www.fairchildsemi.com
5
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP17N60N / FDPF17N60NT N-Channel MOSFET
FDP17N60N/FDPF17N60NT Rev. A www.fairchildsemi.com
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D UT
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
L
I
SD
10V
V
GS
( D riv e r )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body D iode
Forw ard Volta
g
e D rop
V
SD
I
FM
, Body D iode Forw ard C urrent
Body D iode Reverse C urrent
I
RM
Body D iode Recovery dv/dt
di/dt
D = G ate Pulse W idth
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Sam e Type
as D U T
V
GS
• dv/dt controlled by R
G
•I
SD
controlled by pulse period
V
DD
LL
I
SD
10V
V
GS
( D riv e r )
I
SD
( DUT )
V
DS
( DUT )
V
DD
Body D iode
Forw ard Volta
g
e D rop
V
SD
I
FM
, Body D iode Forw ard C urrent
Body D iode Reverse C urrent
I
RM
Body D iode Recovery dv/dt
di/dt
D = G ate Pulse W idth
Gate Pulse Period
--------------------------
D = G ate Pulse W idth
Gate Pulse Period
--------------------------
FDP17N60N / FDPF17N60NT N-Channel MOSFET
FDP17N60N/FDPF17N60NT Rev. A www.fairchildsemi.com7
Mechanical Dimensions
TO-220
FDP17N60N / FDPF17N60NT N-Channel MOSFET
FDP17N60N/FDPF17N60NT Rev. A www.fairchildsemi.com
8
Package Dimensions
Dimensions in Millimeters
TO-220F Potted
* Front/Back Side Isolation Voltage : 4000V
FDP17N60N / FDPF17N60NT N-Channel MOSFET
FDP17N60N/FDPF17N60NT Rev. A www.fairchildsemi.com99
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Definition of Terms
Auto-SPM™
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EZSWITCH™ *
™*
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®
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QS™
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™
Saving our world, 1mW /W /kW at a time™
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SuperSOT™-3
SuperSOT™-6
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®*
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TRUECURRENT™*
µSerDes™
UHC®
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UniFET™
VCX™
VisualMax™
XS™
®
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Rev. I40
