IXA17IF1200HJ XPT IGBT VCES = 1200 V I C25 = 28 A VCE(sat) = 1.8 V Copack Part number IXA17IF1200HJ Backside: isolated 2 (C) (G) 1 3 (E) Features / Advantages: Applications: Package: ISOPLUS247 Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 3x Ic Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONICTM diode - fast and soft reverse recovery - low operating forward voltage AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, Fans Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20100623a IXA17IF1200HJ Ratings IGBT Symbol VCES Definition collector emitter voltage VGES max. DC gate voltage VGEM max. transient gate emitter voltage I C25 collector current Conditions min. TVJ = 25C TC = 25C I C80 V 6.5 V 0.1 mA I C = 0.6 mA; VGE = VCE TVJ = 25C I CES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 25C 1.8 TVJ = 125 C t d(on) turn-on delay time tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area 600 V; IC = 5.4 5.9 15 A TVJ = 125 C 15 A VGE = 15 V; R G = 56 VGE = 15 V; R G = 56 short circuit safe operating area VCEmax = 900 V t SC short circuit duration VCE = 900 V; VGE = 15 V R G = 56 ; non-repetitive I SC R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA 47 nC 70 ns 40 ns 250 ns 100 ns 1.55 mJ 1.7 mJ TVJ = 125 C VCEmax = 1200 V SCSOA short circuit current mA 0.1 500 inductive load VCE = V 2.1 TVJ = 125 C VCE = 600 V; VGE = 15 V; IC = A 2.1 gate emitter threshold voltage VGE = 20 V V 28 A VGE(th) total gate charge 30 W IC = gate emitter leakage current V 18 collector emitter saturation voltage Q G(on) 20 100 VCE(sat) I GES Unit V TC = 25C total power dissipation 15 A; VGE = 15 V max. 1200 TC = 80 C Ptot I CM typ. TVJ = 125 C 45 A 10 s A 60 1.26 K/W K/W 0.25 Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 32 A TC = 80 C 19 A TVJ = 25C 2.20 V * mA I F 80 20 A VF forward voltage IF = IR reverse current VR = VRRM TVJ = 125C * not applicable, see Ices value above Q rr reverse recovery charge I RM max. reverse recovery current t rr reverse recovery time E rec reverse recovery energy R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved TVJ = 25C * mA 3 C 20 A TVJ = 125C VR = 600 V -di F /dt = -400 A/s IF = 20 A; VGE = 0 V TVJ = 125C V 1.95 350 ns 0.7 mJ 1.5 K/W 0.25 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20100623a IXA17IF1200HJ Package Ratings ISOPLUS247 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 70 Unit A -40 150 C -40 125 C 150 C Weight 6 FC 20 mounting force with clip d Spp/App VISOL mm terminal to backside 4.1 mm 3600 V 3000 V 50/60 Hz, RMS; IISOL 1 mA t = 1 minute Product Marking Part number I X A 17 IF 1200 HJ IXYS Logo N 2.7 t = 1 second isolation voltage 120 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g = = = = = = = IGBT XPT IGBT Gen 1 / std Current Rating [A] Copack Reverse Voltage [V] ISOPLUS247 (3) ISOPLUS(R) XXXXXXXXX Zyyww Part No. Assembly Line abcd Assembly Code Date Code Ordering Standard Part Number IXA17IF1200HJ Equivalent Circuits for Simulation I V0 R0 Marking on Product IXA17IF1200HJ Delivery Mode Tube IGBT Diode threshold voltage 1.1 1.25 V R 0 max slope resistance * 86 42.5 m (c) 2010 IXYS all rights reserved Code No. 507522 T VJ = 150 C * on die level V 0 max IXYS reserves the right to change limits, conditions and dimensions. Quantity 30 Data according to IEC 60747and per semiconductor unless otherwise specified 20100623a IXA17IF1200HJ Outlines ISOPLUS247 A2 E D2 A E1 Q Dim. D D3 D1 R A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W 2 3 L L1 1 3x b 2x b2 Inches min max 0.190 0.205 0.090 0.100 0.075 0.085 0.045 0.055 0.075 0.087 0.115 0.128 0.024 0.033 0.819 0.840 0.620 0.640 0.065 0.085 0.799 0.815 0.620 0.635 0.520 0.540 0.215 BSC 0.780 0.811 0.150 0.172 0.220 0.244 0.167 0.217 0.004 Die konvexe Form des Substrates ist typ. < 0.04 mm uber der Kunststoffoberflache der Bauteilunterseite The convex bow of substrate is typ. < 0.04 mm over plastic surface level of device bottom side 2x e c b4 Millimeter min max 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.24 0.61 0.83 20.80 21.34 15.75 16.26 1.65 2.15 20.30 20.70 15.75 16.13 13.21 13.72 5.45 BSC 19.81 20.60 3.81 4.38 5.59 6.20 4.25 5.50 0.10 A1 Die Gehauseabmessungen entsprechen dem Typ TO-247 AD gema JEDEC auer Schraubloch und Lmax. This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD except screw hole and except Lmax. W 2 (C) (G) 1 3 (E) IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20100623a IXA17IF1200HJ IGBT 30 IC 30 VGE = 15 V 25 25 20 20 11 V TVJ = 125C TVJ = 25C 15 13 V VGE = 15 V 17 V 19 V IC TVJ = 125C 15 [A] [A] 10 10 5 5 0 9V 0 0 1 2 3 0 1 2 VCE [V] 3 4 5 VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 30 20 IC = 15 A VCE = 600 V 25 15 20 IC VGE 15 [A] 10 [V] 10 5 TVJ = 125C 5 TVJ = 25C 0 0 5 6 7 8 9 10 11 12 0 13 10 20 40 50 60 140 160 QG [nC] VGE [V] Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 4 2.8 RG = 56 VCE = 600 V VGE = 15 V TVJ = 125C 3 E 30 Eon 2.4 Eoff IC = 15 A VCE = 600 V VGE = 15 V TVJ = 125C E 2 2.0 [mJ] [mJ] 1 1.6 0 0 5 10 15 20 25 30 35 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved 1.2 40 Eoff Eon 60 80 100 120 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance Data according to IEC 60747and per semiconductor unless otherwise specified 20100623a IXA17IF1200HJ Diode 40 5 TVJ = 125C VR = 600 V 30 4 40 A IF Qrr 20 3 [A] 20 A [C] TVJ = 125C 10 2 TVJ = 25C 0 0.0 0.5 1.0 1.5 VF [V] 2.0 2.5 10 A 1 200 3.0 Fig. 7 Typ. Forward current versus VF 300 400 500 diF /dt [A/s] 600 700 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 35 700 40 A TVJ = 125C 30 TVJ = 125C 600 VR = 600 V 20 A 25 VR = 600 V 500 10 A IRR 20 [A] 15 [ns] 300 10 200 5 100 trr 0 200 300 400 500 diF /dt [A/s] 600 400 40 A 20 A 10 A 0 200 700 Fig. 9 Typ. peak reverse current IRM vs. di/dt 300 400 500 diF /dt [A/s] 600 700 Fig. 10 Typ. recovery time trr versus di/dt 1.4 10 TVJ = 125C VR = 600 V 1.2 Diode 1.0 1 40 A Erec IGBT ZthJC 0.8 20 A [mJ] [K/W] 0.6 0.1 10 A 0.4 0.2 200 300 400 500 diF /dt [A/s] 600 700 Fig. 11 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved 0.01 0.001 0.01 0.1 tp [s] 1 10 Fig. 12 Typ. transient thermal impedance Data according to IEC 60747and per semiconductor unless otherwise specified 20100623a