IXA17IF1200HJ
Copack
XPT IGBT
2(C)
3(E)
(G) 1
Part number
IXA17IF1200HJ
Backside: isolated
C25
CE(sat)
VV1.8
CES
28
1200
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
● Pumps, Fans
ISOPLUS247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
● Isolation Voltage: V~
3600
IXYS reserves the right to change limits, conditions and dimensions. 20100623aData according to IEC 60747and per semiconductor unless otherwise specified
© 2010 IXYS all rights reserved
IXA17IF1200HJ
-di /dt = A/µs
T = °C
V
CES
V1200
collector emitter voltage
collector emitter saturation voltage
T = 25°C
collect or current A
28
A
C
VJ
Symbol Definition
Ratings
typ. max.min.Conditions Unit
18
V
V
CE(sat)
total power dissipation 100 W
collector emitter leakage current
6.5 V
turn-on delay time 70 ns
t
reverse bias safe operating area
A
V
GES
V±20
V
GEM
max. transient ga te emitte r vo l t a g e
T = °C
C
V
P
tot
gate emitter threshold voltage
RBSOA
45
±30
T = °C
T = °C
VJ
V
max. DC gate voltage
I
C25
I
C
T = 25°C
VJ
I = A; V = 15 V
CGE
T = 25°C
VJ
V
GE(th)
I
CES
I = mA; V = V
CGECE
V = V ; V = 0 V
CE CES GE
I
GES
T = 25°C
VJ
gate emitter leakage current V = ±20 V
GE
2.1
2.1
5.95.4
mA
0.1 mA
0.1
500
G(on)
total gate charge V = V; V = 15 V; I = A
CE
Q
GE C
47 nC
t
t
t
E
E
d(on)
r
d(off)
f
on
off
40 ns
250 ns
100 ns
1.55 mJ
1.7 mJ
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load
V = V; I = A
V = ±15 V; R = Ω
CE C
GE G
V = ±15 V; R = Ω
GE G
V = V
CEmax
1200
short circuit safe operating area
µs
SCSOA
10T = °C
VJ
V = V; V = ±15 V
CE GE
short circuit duration
t
short circuit current
I
SC
SC
R = Ω; non-repetitive
G
60 A
R
thJC
thermal resistance junction to case 1.26 K/W
V
RRM
V1200
max. repetitive rev ers e voltage T = 25°C
VJ
T = 25°C
forward current A
32
A
C
19T = °C
C
I
F25
I
F
T = 25°C
forward voltage V
2.20
V
VJ
1.95T = 125°C
VJ
V
F
I = A
F
T = 25°C
reverse current mA
*
mA
VJ
*T = 125°C
VJ
I
RR RRM
T = 125°C
VJ
Q
I
t
rr
RM
rr
3µC
20 A
350 ns
reverse recovery charge
max. reverse recovery current
reverse recovery time
V =
I = A; V = 0 V
F
FGE
E
rec
0.7 mJ
reverse recovery energy
R
R
thJC
thermal resistance junction to case 1.5 K/W
V = V
T = 25°C
C
T = 25°C
VJ
T = °C
VJ
VJ
15
0.6
15
15
20
20
56
56
56
600
900
-400
600
I
CM
1.8
R
thCH
thermal resistance case to heatsink K/W
R
thCH
thermal resistance case to heatsink K/W
* not applicable, see Ices value above
IGBT
Diode
600 V
V = V
CEmax
900
80
80
80
80
125
125
125
125
125
nA
0.25
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20100623aData according to IEC 60747and per semiconductor unless otherwise specified
© 2010 IXYS all rights reserved
IXA17IF1200HJ
Ratings
Product Mar
k
in
g
Date Code
Part No.
Logo
IXYS
abcd
Assembly Code
Zyyww
Assembly Line
ISOPLUS®
XXXXXXXXX
I
X
A
17
IF
1200
HJ
Part number
IGBT
XPT IGBT
Gen 1 / std
Copack
ISOPLUS247 (3)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C150
virt ua l j un ctio n temp eratu re -40
Weight g6
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N120
mount ing for ce w i th cli p 20
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
2.7
4.1
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current 70 A
per terminal
125-40
terminal to terminal
ISOPLUS247
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
50/60 Hz, RMS; I ≤ 1 mA
ISOL
IXA17IF1200HJ 507522Tube 30IXA17IF1200HJStandard
3000
3600
ISOL
T
stg
°C150
storage temperature -40
threshold voltage V
mΩ
V
0 max
R
0 max
slope resistance *
1.1
86
1.25
42.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
IGBT Diode
150 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20100623aData according to IEC 60747and per semiconductor unless otherwise specified
© 2010 IXYS all rights reserved
IXA17IF1200HJ
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0. 04 mm over plas ti c
surface level of device bottom si de
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD
gemäß JEDEC außer Schraubloch und Lmax.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-247 AD except screw hole and except Lmax.
min max min max
A 4.83 5.21 0.190 0.205
A1 2.29 2.54 0.090 0.100
A2 1.91 2.16 0.075 0.085
b 1.14 1.40 0.045 0.055
b2 1.91 2.20 0.075 0.087
b4 2.92 3.24 0.115 0.128
c 0.61 0.83 0.024 0.033
D 20.80 21.34 0.819 0.840
D1 15.75 16.26 0.620 0.640
D2 1.65 2.15 0.065 0.085
D3 20.30 20.70 0.799 0.815
E 15.75 16.13 0.620 0.635
E1 13.21 13.72 0.520 0.540
e 5.45 BSC 0.215 BSC
L 19.81 20.60 0.780 0.811
L1 3.81 4.38 0.150 0.172
Q 5.59 6.20 0.220 0.244
R 4.25 5.50 0.167 0.217
W - 0.10 - 0.004
Dim. Millimeter Inches
E
123
R
DL
L1
Q
3x b
2x b2
b4
W
A
A2
c
A1
2x e
E1
D1
D2
D3
2(C)
3(E)
(G) 1
Outlines ISOPLUS247
IXYS reserves the right to change limits, conditions and dimensions. 20100623aData according to IEC 60747and per semiconductor unless otherwise specified
© 2010 IXYS all rights reserved
IXA17IF1200HJ
0123
0
5
10
15
20
25
3
0
0 5 10 15 20 25 30 35
0
1
2
3
4
012345
0
5
10
15
20
25
3
0
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5678910111213
0
5
10
15
20
25
30
0 102030405060
0
5
10
15
20
13 V
40 60 80 100 120 140 160
1.2
1.6
2.0
2.4
2.8
E
[mJ]
E
on
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
=15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
off
Fig. 6 Typ. switching energy vs. gate resistance
R
G
[]
E
[mJ]
I
C
[A]
R
G
=56
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
=125°C
E
on
E
off
I
C
=15A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
=125°C
I
C
=15A
V
CE
=600V
T
VJ
=125°C
T
VJ
=25°C
V
GE
=15 V
T
VJ
=125°C
T
VJ
= 125°C
T
VJ
=25°C
IGBT
IXYS reserves the right to change limits, conditions and dimensions. 20100623aData according to IEC 60747and per semiconductor unless otherwise specified
© 2010 IXYS all rights reserved
IXA17IF1200HJ
200 300 400 500 600 700
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
T
VJ
=125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
= 600 V
10 A
20 A
40 A
Fig. 7 Typ. Forward current versus V
F
Fig. 8 Typ. reverse recov.charge Q
rr
vs. di/dt
200 300 400 500 600 700
0
5
10
15
20
25
30
35
I
RR
[A]
di
F
/dt [A/µs]
T
VJ
=125°C
V
R
=600V
10 A
20 A
40 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
200 300 400 500 600 700
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
10 A
20 A
40 A
T
VJ
= 125°C
V
R
=600 V
Fig. 10 Typ. recovery time t
rr
versus di/dt
Fig. 11 Typ. recovery energy E
rec
versus di/dt
200 300 400 500 600 700
0.2
0.4
0.6
0.8
1.0
1.2
1.4
E
rec
[mJ]
di
F
/dt [A/µs]
T
VJ
=125°C
V
R
=600 V
10 A
20 A
40 A
0.001 0.01 0.1 1 10
0.01
0.1
1
10
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transient thermal impedance
Diode
IGBT
Diode
IXYS reserves the right to change limits, conditions and dimensions. 20100623aData according to IEC 60747and per semiconductor unless otherwise specified
© 2010 IXYS all rights reserved
