1
Motorola Thyristor Device Data
. . . designed for use in solid state relays, MPU interface, TTL logic and any other light
industrial or consumer application. Supplied in an inexpensive TO–92 package which
is readily adaptable for use in automatic insertion equipment.
•One–Piece, Injection–Molded Unibloc Package
•Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of
Trigger Sources, and Especially for Circuits that Source Gate Drives
•All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters
and Reliability
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Peak Repetitive Off-State Voltage
(Gate Open, TJ = –40 to +110°C)(1)
1/2 Sine Wave 50 to 60 Hz, Gate Open
MAC97–4, MAC97A4
MAC97–6, MAC97A6
MAC97–8, MAC97A8
VDRM
200
400
600
Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (TC = +50°C) IT(RMS) 0.8 Amp
Peak Non–repetitive Surge Current
(One Full Cycle, 60 Hz, TA = 110°C) ITSM 8.0 Amps
Circuit Fusing Considerations
TJ = –40 to +110°C (t = 8.3 ms) I2t 0.26 A2s
Peak Gate Voltage (t
v
2.0
m
s) VGM 5.0 Volts
Peak Gate Power (t
v
2.0
m
s) PGM 5.0 Watts
Average Gate Power (TC = 80°C, t
v
8.3 ms) PG(AV) 0.1 Watt
Peak Gate Current (t
v
2.0
m
s) IGM 1.0 Amp
Operating Junction Temperature Range TJ–40 to +110 °C
Storage Temperature Range Tstg –40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 75 °C/W
Thermal Resistance, Junction to Ambient RθJA 200 °C/W
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be
tested with a constant current source such that the voltage ratings of the devices are
exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MAC97/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
CASE 29–04
TO–226AA, STYLE 12
(TO–92)
TRIACs
0.8 AMPERE RMS
200 — 600 VOLTS
Motorola preferred devices
MT1
G
MT2
MT1
MT2
G
(Device Date Code
9625 and Up)
REV 2
2 Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current(1)
(VD = Rated VDRM, TJ = 110°C, Gate Open) IRRM — — 0.1 mA
Peak On-State Voltage (Either Direction)
(ITM = 1.1 A Peak; Pulse Width
v
2.0 ms, Duty Cycle
v
2.0%) VTM — — 1.65 Volts
Gate Trigger Current (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) MAC97
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(–), G(+) MAC97A
IGT
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
10
10
10
5.0
5.0
5.0
7.0
mA
Gate Trigger Voltage, (Continuous dc)
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) All Types
MT2(+), G(–) All Types
MT2(–), G(–) All Types
MT2(–), G(+) All Types
(VD = Rated VDRM, RL = 10 k Ohms, TJ = 110°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) All Types
MT2(–), G(+) All Types
VGT
—
—
—
—
0.1
0.1
—
—
—
—
—
—
2.0
2.0
2.0
2.5
—
—
Volts
Holding Current
(VD = 12 Vdc, ITM = 200 mA, Gate Open) IH— — 5.0 mA
Gate Controlled Turn–On Time
(VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA) tgt — 2.0 —
m
s
Critical Rate–of–Rise of Commutation Voltage
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS,
On–State Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150
W
, See Figure 13)
dv/dtc1.5 — — V
/m
s
Critical Rate–of–Rise of Off State Voltage
(Vpk = Rated VDRM, TC = 110°C, Gate Open, Exponential Method) dv/dt 10 — — V
/m
s
3
Motorola Thyristor Device Data
Figure 1. RMS Current Derating Figure 2. RMS Current Derating
Figure 3. Power Dissipation Figure 4. On–State Characteristics
Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current
α
α
α
= CONDUCTION ANGLE
0.5 0.6 0.7 0.80.1 0.2 0.3 0.40
110
100
90
80
70
60
IT(RMS), RMS ON–STATE CURRENT (AMPS)
α
α
α
= CONDUCTION ANGLE
0.25 0.3 0.35 0.40.05 0.1 0.15 0.20
90
80
70
60
50
40
IT(RMS), RMS ON–STATE CURRENT (AMPS)
30
20
0.4 0.5 0.6 0.70 0.1 0.2 0.3
0.6
0.4
0.2
0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
0.1 1.0 10 100
1.0
t, TIME (ms)
0.1
0.01
0.8
1
S
1031
S
1043.0 30 501.0 2.0 100
3.0
2.0
1.0
NUMBER OF CYCLES
5.0
10
T , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
C
°
T
= 30
°
60
°
90
°
DC
180
°
120
°
Z
Q
JC(t) = R
Q
JC(t)
@
r(t)
50
40
30
100
110
2.5 3.0 3.5 4.00.5 1.0 1.5 2.0 4.5
10
1.0
0.1
0.01
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) 5.0
I , INSTANTANEOUS ON–STATE CURRENT (AMPS)
T
TYPICAL @ TJ = 25
°
C
MAXIMUM @ TJ = 25
°
C
MAXIMUM @ TJ = 110
°
C
α
α
α
= CONDUCTION ANGLE
105.0
0.8
1.0
1.2
Surge is preceded and followed by rated current.
TJ = 110
°
C
f = 60 Hz CYCLE
MAXIMUM @ TJ = 110
°
C
T
= 30
°
60
°
90
°
DC
180
°
120
°
, MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE ( C)
°
T(RMS)
I
P , MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
(AV)
I , PEAK SURGE CURRENT (AMPS)
TSM
R , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
(t)
4 Motorola Thyristor Device Data
Figure 7. Typical Holding Current Variation Figure 8. Typical Gate Trigger Current
Variation
Figure 9. Gate Trigger Voltage Variation Figure 10. Exponential Static dv/dt versus
Gate
ć
MT1 Resistance
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
6.0
4.0
2.0
0
TJ, JUNCTION TEMPERATURE (
°
C)
10
1.0
TJ, JUNCTION TEMPERATURE (
°
C)
0.1
–40 –20
1.1
0.9
0.7
0.5
0.3
TJ, JUNCTION TEMPERATURE (
°
C) 10 100 1000
40
RGK, GATE – MT1 RESISTANCE (OHMS)
30
20 10,000
1.0 10
1.0
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
10
TJ, JUNCTION TEMPERATURE (
°
C)
40 60 80–40 –20 0 20 100 110 40 60 80–40 –20 0 20 100 110
020 40 60 80 100
50
60
60 70
10
1.0 80 90 100 110
I , HOLDING CURRENT (mA)
H
I , GATE TRIGGER CURRENT (mA)
GT
STATIC dv/dt (V/ S)
VDRM = 200 V
400 Hz
600 Vpk
TJ = 110
°
C
Q2
Q1
(di
ń
dt)c
+
6f ITM
1000
tw
VDRM
5.0
3.0
1.0
300 Hz
180 Hz
60 Hz
MAIN TERMINAL
#2 NEGATIVE
MAIN TERMINAL
#2 POSITIVE Q4
Q3
MAIN TERMINAL
#2 NEGATIVE
MAIN TERMINAL
#2 POSITIVE
Q2
Q1
Q4
Q3
ITM
f
+
1
2tw
100
°
C
110
°
C
80
°
C
60
°
C
COMMUTATING dv/dt
dv/dt , (V/ S)
c
m
COMMUTATING dv/dt
dv/dt , (V/ S)
c
m
V , GATE TRIGGER VOLTAGE (VOLTS)
GT
m
5
Motorola Thyristor Device Data
Figure 13. Simplified Q1 (dv/dt)c Test Circuit
1N4007
200 V
0.047 CS
ADJUST FOR
dv/dt(c)
56
RS
CS
80 mHY
LL
MEASURE
I
1N914
2
75 VRMS
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
CONTROL
5
m
F
NON–POLAR
CL
1
51
G
TRIGGER CONTROL
CHARGE
TRIGGER
NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
–
+
6 Motorola Thyristor Device Data
PACKAGE DIMENSIONS
CASE 29–04
(TO–226AA)
(TO–92)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. GATE
3. MAIN TERMINAL 2
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
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arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
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Opportunity/Affirmative Action Employer.
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MAC97/D
*MAC97/D*
◊
