LESHAN RADIO COMPANY, LTD. Silicon Hot-Carrier Diodes Schottky Barrier Diodes MMBD301LT1 These devices are designed primarily for high-efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low-cost, high-volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package. 30 VOLTS SILICON HOT-CARRIER DETECTOR AND SWITCHING DIODES * EXtremely Low Minority Carrier Lifetime -15ps(Typ) * very Low Capacitance -1.5pF(Max)@VR=15V * CLow Reverse Leakage -IR=13 nAdc(Typ)MBD301,MMBD301 3 1 2 1 ANODE 3 CATHODE CASE 318-08, STYLE 6 SOT- 23 (TO-236AB) MAXIMUM RATINGS(TJ=125C unless otherwise noted) MBD301 MMBD301LT1 Rating symbol value unit Reverse Voltage VR 30 Volts Forward Power Dissipation PF @TA=25 C 280 200 mW Derate above 25 C 2.8 2.0 mW/ C Operating Junction TJ C Temperature Range -55 to +125 Storage Temperature Range T stg -55 to +150 C DEVICE MARKING MMBD301LT1=4T ELECTRICAL CHARACTERISTICS(T A=25 C unless otherwise noted) Characteristic Symbol Min Typ Reverse Breakdown Voltage(IR=10A) Max Unit -- Volts V (BR)R 30 -- Total Capacitance(VR=15V,f=1.0MHz,)Figure1 CT -- 0.9 1.5 pF Reverse Leakage(VR=25V)Figure3 IR -- 13 200 n Adc Forward Voltage(IF=1.0mAdc)Figure4 Forward Voltage(IF=10mAdc)Figure4 V V -- -- 0.38 0.52 0.45 0.6 Vdc Vdc F F NOTE:MMBD301LT1 is also available in bulk packaging.Use MMBD301L as the device title to order this device in bulk. G16-1/2 LESHAN RADIO COMPANY, LTD. MMBD301LT1 C T , TOTAL CAPACITANCE (pF) 2.8 f =1.0MHz 2.4 2.0 1.6 1.2 0.8 0.4 0 0 3.0 6.0 9.0 12 15 18 21 24 27 30 , MINORITY CARRIER LIFETIME (ps) TYPICAL ELECTRICAL CHARACTERISTICS 400 KRAKAUER METHOD 300 200 100 0 0 10 20 30 40 50 60 70 80 90 100 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 100 I F , FORWARD CURRENT (mA) I R, REVERSE LEAKAGE ( A) 500 T A = 100C 1.0 75C 0.1 25C 0.01 0.001 0 6.0 12 18 24 30 10 T A = 85C T A= -40C 1.0 T A = 25C 0.1 0.2 0.4 0.6 0.8 1.0 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Reverse Leakage Figure 4. Forward Voltage I F(PEAK) 1.2 CAPACITIVE CONDUCTION I R(PEAK) FORWARD CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) STORAGE CONDUCTION PADS SAMPLING OSCILLOSCOPE DUT (50 INPUT) Figure 5. Krakauer Method of Measuring Lifetime G16-2/2