UV ENHANCED PIN PHOTODIODES SPECIFICATIONS Responsivity: Part Number 0.10 A/W min., 0.18 A/W typ. @ 365nm Total Area (mm2) SD 172-13-23-222 15 Active Area Shunt Resistance1 (in) 0.185 x Dark Current1 at 5V Breakdown Voltage2 at 10A Capacitance3 NEP4 Max Linear Current5 Response Time6 at 5V Typ. Min. (M) Typ. (nA) Max. (nA) Typ. (V) at 0V (pF) at 5V (pF) Typ. (W/Hz) Typ. (mA) Typ. (ns) 105 4.4 19 10 255 75 7.2x10-14 1.5 30 77 6.0 30 10 345 102 8.9x10-14 2.03 45 36 12.5 50 10 723 215 1.3x10-13 4.86 70 15 30 120 10 1700 500 1.9x10-13 10.0 200 0.125 SD 200-13-23-242 20.3 SD 290-13-23-242 42.6 0.200 (dia). 0.300 x 0.220 SD 445-13-23-305 100 0.394 x 0.394 * All values at 23C 1. Dark Current and Shunt Resistance vary with temperature as follows; for T23C, IDT = ID23 * 1.09T, RSHT= RSH23 * 0.9T, where T=(T-23) and ID23 and RSH23 are values at 23C. 2. Typical values listed. Minimum value shall be 50% of typical. 3. Typical values listed. Maximum value shall be 20% higher than the typical. 4. Test conditions are VB = -10mV, and 365 nm. 5. In photovoltaic mode. Maximum linear current specifies the level at which the output current characteristic deviates more than 10% from the straight line. The short circuit current saturates at approximately 10 times this level. 6. Response Time (transition time between 10% and 90% of the output signal amplitude) measured at 670 nm with a 50 load. Shorter wavelengths will result in faster rise and fall times. Storage and Operating Temperature Range for all photodiodes is -40C to 110C, except for the SD 445-13-23-305, which is - 20C to 75C. Absolute Spectral Responsivity 0.70 Responsivity (A/W) 0.60 0.50 0.40 0.30 0.20 0.10 0.00 200 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) Dimensional Outlines SD 172-13-23-222 SD 200-13-23-242 SD 290-13-23-242 SD 445-13-23-305