UV ENHANCED PIN PHOTODIODES
SPECIFICATIONS
Responsivity: 0.10 A/W min., 0.18 A/W typ. @ 365nm
Part Number
Total
Area
Active
Area
Shunt
Resistance1
Dark Current1
at 5V
Breakdown
Voltage2
at 10µA
Capacitance3
Typ.
NEP4
Max
Linear
Current5
Response
Time6
at 5V
Min. Typ. Max. Typ. at 0V at 5V Typ. Typ. Typ.
(mm2) (in) (MΩ) (nA) (nA) (V) (pF) (pF)
(W/√Hz) (mA) (ns)
SD 172-13-23-222 15 0.185
x
0.125
105 4.4 19 10 255 75 7.2x10-14 1.5 30
SD 200-13-23-242 20.3 0.200
(dia). 77 6.0 30 10 345 102 8.9x10-14 2.03 45
SD 290-13-23-242 42.6 0.300
x
0.220
36 12.5 50 10 723 215 1.3x10-13 4.86 70
SD 445-13-23-305 100 0.394
x
0.394
15 30 120 10 1700 500 1.9x10-13 10.0 200
* All values at 23°C
1. Dark Current and Shunt Resistance vary with temperature as follows; for T≠23°C, IDT = ID23 * 1.09∆T,
RSHT= RSH23 * 0.9∆T, where ∆T=(T-23) and ID23 and RSH23 are values at 23°C.
2. Typical values listed. Minimum value shall be 50% of typical.
3. Typical values listed. Maximum value shall be 20% higher than the typical.
4. Test conditions are VB = -10mV, and 365 nm.
5. In photovoltaic mode. Maximum linear current specifies the level at which the output current characteristic deviates more than 10% from the
straight line. The short circuit current saturates at approximately 10 times this level.
6. Response Time (transition time between 10% and 90% of the output signal amplitude) measured at 670 nm with a 50Ω load. Shorter
wavelengths will result in faster rise and fall times.
Storage and Operating Temperature Range for all photodiodes is -40°C to 110°C, except for the SD 445-13-23-305, which is –
20°C to 75°C.
Absolute Spectral Responsivity
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
200 300 400 500 600 700 800 900 1000 1100 1200
Wavelength (nm)
Responsivity (A/W)
Dimensional Outlines
SD 445-13-23-305
SD 172-13-23-222 SD 200-13-23-242
SD 290-13-23-242
