SEMICONDUCTOR KID65783AP/AF TECHNICAL DATA BIPOLAR LINEAR INTEGRATED CIRCUIT 8CH HIGH-VOLTAGE SOURCE DRIVER The KID65783AP/AF is comprised of eight source current transistor array. This driver is specifically designed for fluorescent display applications. Applications include relay, hammer and lamp drivers. C L G W d Q T P D FEATURES *High Output Voltage : VCC=50V(Min.). DIM MILLIMETERS A 25.1MAX _ 0.2 B 6.40 + _ 0.2 C 3.50 + _ 0.1 D 1.40 + _ 0.1 d 0.50 + _ G 4.15 + 0.3 _ 0.3 L 3.30 + A *Output Current (Single Output) IOUT : -500mA(Min.). 18 10 1 9 B *Output Clamp Diodes. *Single Supply Voltage. P T W Q *Input Compatible With Various Types of Logic. *Package Type-AP : DIP-18pin. DIP-18(1)Pin 2.54 0.25+0.1/-0.05 7.62 0 - 15 *Package Type AF : FLP-20pin. TYPE DESIGNATION KID65783AP/AF TTL, 5V CMOS DIP-18 C L G W MAXIMUM RATINGS (Ta=25) SYMBOL RATING UNIT VCC 50 V Output Current IOUT -500 mA/ch Input Voltage VIN 15 V Clamp Diode Reverse Voltage VR 50 V Clamp Diode Forward Current IF 500 mA Supply Voltage Power Dissipation AP AF PD (Note) T P D 1.47 0.96 18 10 1 9 Q DIM MILLIMETERS _ 0.2 23.0 + A _ 0.2 6.35 + B _ 0.2 C 3.30 + _ 0.1 1.52 + D _ 0.1 0.46 + d _ 0.3 4.05 + G _ 0.3 L 3.30 + 2.54 P 0.25+0.1/-0.05 T _ 0.2 7.75 + W Q 0 - 10 A B CHARACTERISTIC d W Operating Temperature Topr -4085 Storage Temperature Tstg -55150 DIP-18(1) G P D T H Note) Delated above 25 in the proportion of 11.7W/(AP Type), 7.7W/(AF Type). L 1 10 B1 11 B2 A 20 DIM A B1 B2 D G H L P T MILLIMETERS _ 0.2 12.83 + _ 0.2 7.49 + _ 0.3 10.34 + _ 0.1 0.4 + 0.20+0.1/-0.05 _ 0.2 2.51+ _ 0.2 0.65 + 1.27 0.27+0.1/-0.05 FLP-20 2010. 2. 10 Revision No : 3 1/5 KID65783AP/AF PIN CONNECION (TOP VIEW) AF-TYPE (FLP-20 package) O1 O2 O3 O4 O5 O6 O7 O8 GND N.C 20 19 18 17 16 15 14 13 12 11 1 I1 2 I2 3 I3 4 I4 5 I5 6 I6 7 I7 8 I8 9 VCC 10 N.C AP-TYPE (DIP-18 package) O1 O2 O3 O4 O5 O6 O7 O8 GND 18 17 16 15 14 13 12 11 10 1 I1 2 I2 3 I3 4 I4 5 I5 6 I6 7 I7 8 I8 9 VCC SCHEMATICS (EACH DRIVER) 20K VCC n 10K 10K 2.6K INPUT KID65783 : n=1 OUTPUT 5K GND (Note) The input and output parasitic diodes cannot be used as clamp diodes. 2010. 2. 10 Revision No : 3 2/5 KID65783AP/AF RECOMMENDED OPERATING CONDITIONS (Ta=-4085) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCC - - - 50 V - - -260 - - -59 - - -180 - - -38 Supply Voltage Duty=10% 8 Circuits AP Duty=50% Ta=85 IOUT Output Current 8 Circuits Tj=120 Duty=10% Tpw=25mS 8 Circuits AF Duty=50% 8 Circuits mA/ch VIN - - - 12 Output ON VIN (ON) - 2.0 5.0 15 Output OFF VIN (OFF) - 0 - 0.8 - - 50 VR - - 35 - - 400 - - 0.52 - - 0.35 Input Voltage V Input Voltage V Clamp Diode AP Reverse Voltage AF Clamp Diode Forward Current IF - PD - AP Power Dissipation AF V mA W ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC Output Leakage Curret Output Saturation Voltage Input Current SYMBOL ICEX VCE(sat) IIN(ON) TEST CIRCUIT 1 2 MIN. TYP. MAX. UNIT - - 100 A VIN=VIN(ON), IOUT=-350mA - - 2.0 VIN=VIN(ON), IOUT=-225mA - - 1.9 VIN=VIN(ON), IOUT=-100mA - - 1.8 VIN=2.4V - 36 52 VIN=3.85V - 180 260 VCE=2.0V, IOUT=-350mA - - 2.0 0.8 - - VCC=VCC MAX. VIN=0.4V Ta=25 4 VIN(OFF) V A 3 VIN(ON) Input Voltage TEST CONDITION V IOUT=-500A ICC(ON) 3 VIN=VIN(ON), VCC=50V - - 2.5 mA/ch Clamp Diode Reverse Current IR 5 VR=50V - - 50 A Clamp Diode Forward Voltage VF 6 IF=350mA - - 2.0 V Turn-On Delay tON - 0.15 - - 1.8 - Supply Current 7 Turn-Off Delay 2010. 2. 10 tOFF Revision No : 3 VCC=VCC MAX. RL=125 CL=15pF s 3/5 KID65783AP/AF TEST CIRCUIT 1. ICEX VCC VCC 2. VCE(sat) VCE(sat) IOUT ICEX VIN VIN 3. IIN(ON), ICC VCC 4. VIN(ON), IN(OFF) VCC VCE VCE IIN(ON) IOUT VIN(ON), VIN(OFF) VIN 5. IR 6. VF VCC OPEN IR VR VF IF 7. tON , tOFF INPUT VCC PULSE GENERATOR INPUT VIH 50% 50% 0 VIN RL 50s CL tPLH tPHL VOH OUTPUT 50% 50% VOL (Note 1) Pulse width 50S, duty cycle 10% Output impedance 50 , t < = 5ns, t < = 10ns (Note 2) CL includes probe and jig capacitance 2010. 2. 10 Revision No : 3 4/5 KID65783AP/AF I OUT - VIN 1.6 Ta=25 C TYP INPUT CURRENT I IN (mA) OUTPUT CURRENT I OUT (mA) 500 I IN - V IN 400 300 200 100 1.2 0.8 0.4 Ta=25 C TYP. 0 0 0 0.4 0.8 1.2 1.6 2.0 4 0 INPUT VOLTAGE V IN (V) 8 DIDOE FORWARD CURRENT I F (A) OUTPUT CURRENT I OUT (A) Ta=25 C 0.4 0.2 0 1.6 2.4 20 I F - VF 0.6 0.8 16 INPUT VOLTAGE V IN (V) I OUT - VCE(sat) 0 12 3.2 OUTPUT SATURATION VOLTAGE VCE(sat) (V) Ta=25 C TYP 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 DIODE FORWARD VOLTAGE VF (V) P D - Ta POWER DISSIPATION PD (W) 1.5 1 Type-AP Free Air 2 Type-AF Free Air 1 1.0 2 0.5 0 0 50 100 150 AMBIENT TEMPERATURE Ta ( C) 2010. 2. 10 Revision No : 3 5/5