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November 2013
Thermal Characteristics
FQD7N30
N-Channel QFET® MOSFET
300 V, 5.5 A, 700 mΩ
Description
©2000 Fairchild Semiconductor Corporation
FQD7N30 Rev. C1
www.fairchildsemi.com
1
FQD7N30 — N-Channel QFET® MOSFET
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
•5.5 A, 300 V, RDS(on) = 700 mΩ (Max.) @ VGS = 10 V,
ID = 2.75 A
•Low Gate Charge (Typ. 13 nC)
•Low Crss (Typ. 12 pF)
• 100% Avalanche Tested
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
D-PAK
G
S
D
G
S
D
Symbol Parameter FQD7N30TM Unit
RJC Thermal Resistance, Junction to Case, Max. 2.5
oC/W
RJA
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50
FQD7N30TM
* * ()) *
5 1,3&62 & & '
1,/))62 ( 78 '
5 9 33 '
* :* ±() *
; 9'!; (8) <
5 '! & & '
; +!'!; & ) <
!$ 9=+!!$ 7 & *$
991,3&62> 3 & ?
91,3&62 &) ?
"!3&6 ) 7 ?$6
+ &&@/&) 6
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds. ()) 6
Package Marking and Ordering Information
©2000 Fairchild Semiconductor Corporation
FQD7N30 Rev. C1
www.fairchildsemi.com
2
FQD7N30 — N-Channel QFET® MOSFET
Part Number Top Mark Package Reel Size Tape Width Quantity
FQD7N30
FQD7N30TM DPAK 330 mm 16 mm 2500 units
Packing Method
Tape and Reel
Electrical Characteristics TC = 25°C unless otherwise noted.
(Note 4)
(Note 4)
..Max.
B* B=* *,)*5,3&)µ'()) *
∆B*
$ ∆
B=*
5,3&)µ'+3&6 ) ( *$6
5 C:* *,())**,)* / µ'
*,37)*,/3&6 /) µ'
5 :B0= *,()**,)* /)) '
5 :B0=+! *,()**,)* /)) '
* :* *,*5,3&)µ'( ) & ) *
+
+ *,/)*5,3 -&' ) &( ) - Ω
*,&)*5,3 -&' 7 )
5 *,3&**,)*
,/ )D#
7-) E/)
/)) /()
+! /3 /E
*,/&)*5,- )'
+,3&Ω
/( (&
+ -& /E)
3& E)
(& 8)
F: /( /-
F : ( 7
F : E 7
5A & & '
5 A9 33 '
* * *,)*5,& &' / & *
+!+! *,)*5,- )'
5$,/))'$µ
/&)
F +!+! ) -7 µ
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 21 mH, IAS = 5.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 7.0 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
VDS = 240 V, ID = 7.0 A,
VGS = 10 V
©2000 Fairchild Semiconductor Corporation
FQD7N30 Rev. C1
www.fairchildsemi.com
3
FQD7N30 — N-Channel QFET® MOSFET
!"#
Ω
!
!
"
#$
%#&'
9
9
©2000 Fairchild Semiconductor Corporation
FQD7N30 Rev. C1
www.fairchildsemi.com
4
FQD7N30 — N-Channel QFET® MOSFET
Typical Characteristics (Continued)
! " # $
! "
#
µ
µ
$%&'&'&(%
&)&&*+,
-.&'/
0-(
!"#
$
$#
()*$$"&+ ',)*$$
#$
-.!
#$
/
#$
''##$
"
ZJC(t), Thermal Response [oC/W]
Figure 12. Gate Charge Test Circuit & Waveform
Figure 13. Resistive Switching Test Circuit & Waveforms
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
VDS
10%
90%
td(on) tr
ton toff
td(off) tf
VDD
10V
VDS
RL
DUT
RG
VGS
VGS
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
Charge
VGS
10V
Qg
Qgs Qgd
3mA
VGS
DUT
VDS
300nF
50KΩ
200nF
12V
Same Type
as DUT
EAS =LI
AS2
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
L
ID
t p
EAS =LI
AS2
----
2
1
EAS =LI
AS2
----
2
1
----
2
1--------------------
BVDSS -V
DD
BVDSS
VDD
VDS
BVDSS
t p
VDD
IAS
VDS (t)
ID (t)
Time
10V DUT
RG
LL
ID
ID
t p
VGS
VGS
IG = const.
©2000 Fairchild Semiconductor Corporation
FQD7N30 Rev. C1
www.fairchildsemi.com
5
FQD7N30 — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
L
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
VDS
+
_
Driver
RGSame Type
as DUT
VGS • dv/dt controlled by RG
•I
SD controlled by pulse period
VDD
LL
ISD
10V
VGS
( Driver )
ISD
( DUT )
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
IFM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D = Gate Pulse Width
Gate Pulse Period
--------------------------
D = Gate Pulse Width
Gate Pulse Period
--------------------------
©2000 Fairchild Semiconductor Corporation
FQD7N30 Rev. C1
www.fairchildsemi.com
6
FQD7N30 — N-Channel QFET® MOSFET
©2000 Fairchild Semiconductor Corporation
FQD7N30 Rev. C1
www.fairchildsemi.com
7
FQD7N30 — N-Channel QFET® MOSFET
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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©2000 Fairchild Semiconductor Corporation
FQD7N30 Rev. C1
www.fairchildsemi.com
8
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Definition of Terms
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
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®
™
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Rev. I66
tm
®
FQD7N30 — N-Channel QFET® MOSFET
www.onsemi.com
1
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