Ver. CEDPublication date: February 2013 1
DME50501
Silicon PNP epitaxial planar type (Tr1)
Silicon NPN epitaxial planar type (Tr2)
For general amplification
DME20501 in SMini6 type package
Features
High forward current transfer ratio hFE with excellent linearity
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: B1
Basic Part Number
DSA2001 + DSC2001 (Individual)
Packaging
DME505010R
Embossed type (Thermo-compression sealing): 3
000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Tr1
Collector-base voltage (Emitter open) VCBO –60 V
Collector-emitter voltage (Base open) VCEO –50 V
Emitter-base voltage (Collector open) VEBO –7 V
Collector current IC–100 mA
Peak collector current ICP –200 mA
Tr2
Collector-base voltage (Emitter open) VCBO 60 V
Collector-emitter voltage (Base open) VCEO 50 V
Emitter-base voltage (Collector open) VEBO 7 V
Collector current IC100 mA
Peak collector current ICP 200 mA
Overall
Total power dissipation PT150 mW
Junction temperature Tj150 °C
Storage temperature Tstg –55 to +150 °C
Unit: mm
1: Emitter (Tr1)
2: Base (Tr1)
3: Base (Tr2)
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
Panasonic SMini6-F3-B
JEITA SC-113DB
Code SOT-363
Tr1 Tr2
1
(E1) 2
(B1) 3
(B2)
(C2)
4
(C1)
6(E2)
5
Ver. CED
DME50501
2
Electrical Characteristics Ta = 25°C±3°C
Tr1
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = –10 µA, IE = 0 –60 V
Collector-emitter voltage (Base open) VCEO IC = –2 mA, IB = 0 –50 V
Emitter-base voltage (Collector open) VEBO IE = –10 µA, IC = 0 –7 V
Collector-base cutoff current (Emitter open) ICBO VCB = –20 V, IE = 0 – 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = –10 V, IB = 0 –100 µA
Forward current transfer ratio hFE VCE = –10 V, IC = –2 mA 210 460
Collector-emitter saturation voltage VCE(sat) IC = –100 mA, IB = –10 mA – 0.2 – 0.5 V
Transition frequency fTVCE = –10 V, IC = –2 mA 150 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = –10 V, IE = 0, f = 1 MHz 2 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Tr2
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA
Forward current transfer ratio hFE VCE = 10 V, IC = 2 mA 210 460
Collector-emitter saturation voltage VCE(sat) IC = 100 mA, IB = 10 mA 0.13 0.3 V
Transition frequency fTVCE = 10 V, IC = 2 mA 150 MHz
Collector output capacitance
(Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz 1.5 pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
PT Ta
00 20016040 12080
100
50
200
150
DME50501_PT-Ta
Total power dissipation PT (mW)
Ambient temperature Ta (°C)
Common characteristics chart
Ver. CED
DME50501
3
IC VCE hFE IC VCE(sat) IC
00−12−2−10−4−8−6
−120
−100
−80
−60
−40
−20
DME50501(Tr1)_IC-VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Ta = 25°C
IB = −600 µA
−400 µA
−500 µA
−300 µA
−200 µA
−100 µA
0
− 0.1
600
500
400
300
200
100
−1−10 −100
DME50501(Tr1)_hFE-IC
Forward current transfer ratio hFE
Collector current IC (mA)
−30°C
Ta = 85°C
VCE =
−
10 V
25°C
− 0.01
− 0.1
− 0.1
−1
−10
−1−10 −100
DME50501(Tr1)_VCEsat-IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
−30°C
Ta = 85°C
IC / IB = 10
25°C
Characteristics charts of Tr1
IC VBE Cob VCB fT IC
IC VCE hFE IC VCE(sat) IC
00−1.2− 0.4 − 0.8
−120
−100
−80
−60
−40
−20
DME50501(Tr1)_IC-VBE
Collector current IC (mA)
Base-emitter voltage VBE (V)
−30°C
25°C
Ta = 85°C
VCE = −10 V
0
−1
4.0
3.0
2.0
1.0
−10 −100
DME50501(Tr1)_Cob-VCB
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
IE = 0
f = 1 MHz
Ta = 25°C
0
− 0.1
250
200
150
100
50
−1−10 −100
DME50501(Tr1)_fT-IC
Transition frequency fT (MHz)
Collector current IC (mA)
VCE = −10 V
Ta = 25°C
00 122 104 86
120
100
80
60
40
20
DME50501(Tr2)_IC-VCE
Collector current IC (mA)
Collector-emitter voltage VCE (V)
Ta = 25°C
IB = 250 µA
200 µA
150 µA
100 µA
50 µA
0
0.1
600
500
400
300
200
100
1 10 100
DME50501(Tr2)_hFE-IC
Forward current transfer ratio hFE
Collector current IC (mA)
25°C
−30°C
Ta = 85°C
VCE = 10 V
0.01
0.1
0.1
1
10
1 10 100
DME50501(Tr2)_VCEsat-IC
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (mA)
25°C
−30°C
Ta = 85°C
IC / IB = 10
Characteristics charts of Tr2
Ver. CED
DME50501
4
IC VBE Cob VCB fT IC
00 1.20.2 1.00.4 0.80.6
120
100
80
60
40
20
DME50501(Tr2)_IC-VBE
Collector current IC (mA)
Base-emitter voltage VBE (V)
−30°C
25°C
Ta = 85°C
VCE = 10 V
01
4.0
3.0
2.0
1.0
10 100
DME50501(Tr2)_Cob-VCB
Collector-base voltage VCB (V)
Collector output capacitance
(Common base, input open circuited) Cob (pF)
0
0.1
250
200
150
100
50
1 10 100
DME50501(Tr2)_fT-IC
Transition frequency fT (MHz)
Collector current IC (mA)
VCE = 10 V
Ta = 25°C
Ver. CED
DME50501
5
SMini6-F3-B Unit: mm
Land Pattern (Reference) (Unit: mm)
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semiconductors described in this book
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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