MC9S08PA16
MC9S08PA16 Series Data
Sheet
Supports: MC9S08PA16(A) and
MC9S08PA8(A)
Key features
• 8-Bit S08 central processor unit (CPU)
– Up to 20 MHz bus at 2.7 V to 5.5 V across
temperature range of -40 °C to 105 °C
– Supporting up to 40 interrupt/reset sources
– Supporting up to four-level nested interrupt
– On-chip memory
– Up to 16 KB flash read/program/erase over full
operating voltage and temperature
– Up to 256 byte EEPROM; 2-byte erase sector;
program and erase while executing flash
– Up to 2048 byte random-access memory (RAM)
– Flash and RAM access protection
• Power-saving modes
– One low-power stop mode; reduced power wait
mode
– Peripheral clock enable register can disable clocks to
unused modules, reducing currents; allows clocks to
remain enabled to specific peripherals in stop3 mode
• Clocks
– Oscillator (XOSC) - loop-controlled Pierce
oscillator; crystal or ceramic resonator range of
31.25 kHz to 39.0625 kHz or 4 MHz to 20 MHz
– Internal clock source (ICS) - containing a frequency-
locked-loop (FLL) controlled by internal or external
reference; precision trimming of internal reference
allowing 1% deviation across temperature range of 0
°C to 70 °C and 2% deviation across temperature
range of -40 °C to 105 °C; up to 20 MHz
• System protection
– Watchdog with independent clock source
– Low-voltage detection with reset or interrupt;
selectable trip points
– Illegal opcode detection with reset
– Illegal address detection with reset
• Development support
– Single-wire background debug interface
– Breakpoint capability to allow three breakpoints
setting during in-circuit debugging
– On-chip in-circuit emulator (ICE) debug module
containing two comparators and nine trigger modes
• Peripherals
– ACMP - one analog comparator with both positive
and negative inputs; separately selectable interrupt
on rising and falling comparator output; filtering
– ADC - 12-channel, 12-bit resolution; 2.5 µs
conversion time; data buffers with optional
watermark; automatic compare function; internal
bandgap reference channel; operation in stop mode;
optional hardware trigger
– CRC - programmable cyclic redundancy check
module
– FTM - two flex timer modulators modules including
one 6-channel and one 2-channel ones; 16-bit
counter; each channel can be configured for input
capture, output compare, edge- or center-aligned
PWM mode
– IIC - One inter-integrated circuit module; up to 400
kbps; multi-master operation; programmable slave
address; supporting broadcast mode and 10-bit
addressing; supporting SMBUS and PMBUS
– MTIM - One modulo timer with 8-bit prescaler and
overflow interrupt
– RTC - 16-bit real timer counter (RTC)
– SCI - two serial communication interface (SCI/
UART) modules optional 13-bit break; full duplex
non-return to zero (NRZ); LIN extension support
– SPI - one 8-bit serial peripheral interface (SPI)
modules; full-duplex or single-wire bidirectional;
master or slave mode
Freescale Semiconductor Document Number MC9S08PA16
Data Sheet: Technical Data Rev. 3, 06/2015
© 2011–2015 Freescale Semiconductor, Inc.
MC9S08PA16A and MC9S08PA8A
are recommended for new design
• Input/Output
– Up to 37 GPIOs including one output-only pin
– One 8-bit keyboard interrupt module (KBI)
– Two true open-drain output pins
– Four, ultra-high current sink pins supporting 20 mA source/sink current
• Package options
– 44-pin LQFP
– 32-pin LQFP
– 20-pin SOIC; 20-pin TSSOP
– 16-pin TSSOP
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
2 Freescale Semiconductor, Inc.
Table of Contents
1 Ordering parts.......................................................................................4
1.1 Determining valid orderable parts............................................... 4
2 Part identification................................................................................. 4
2.1 Description...................................................................................4
2.2 Format..........................................................................................4
2.3 Fields............................................................................................4
2.4 Example....................................................................................... 5
3 Parameter Classification.......................................................................5
4 Ratings..................................................................................................6
4.1 Thermal handling ratings.............................................................6
4.2 Moisture handling ratings............................................................ 6
4.3 ESD handling ratings...................................................................6
4.4 Voltage and current operating ratings..........................................6
5 General................................................................................................. 7
5.1 Nonswitching electrical specifications........................................ 7
5.1.1 DC characteristics.......................................................... 7
5.1.2 Supply current characteristics........................................ 14
5.1.3 EMC performance..........................................................15
5.2 Switching specifications.............................................................. 16
5.2.1 Control timing................................................................16
5.2.2 Debug trace timing specifications..................................17
5.2.3 FTM module timing.......................................................18
5.3 Thermal specifications.................................................................19
5.3.1 Thermal characteristics.................................................. 19
6 Peripheral operating requirements and behaviors................................ 19
6.1 External oscillator (XOSC) and ICS characteristics....................19
6.2 NVM specifications..................................................................... 21
6.3 Analog..........................................................................................22
6.3.1 ADC characteristics....................................................... 23
6.3.2 Analog comparator (ACMP) electricals.........................25
6.4 Communication interfaces........................................................... 26
6.4.1 SPI switching specifications.......................................... 26
7 Dimensions...........................................................................................29
7.1 Obtaining package dimensions.................................................... 29
8 Pinout................................................................................................... 30
8.1 Signal multiplexing and pin assignments.................................... 30
8.2 Device pin assignment.................................................................31
9 Revision history....................................................................................34
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 3
Ordering parts
1.1 Determining valid orderable parts
Valid orderable part numbers are provided on the web. To determine the orderable part
numbers for this device, go to freescale.com and perform a part number search for the
following device numbers: PA16 and PA8.
Part identification
2.1 Description
Part numbers for the chip have fields that identify the specific part. You can use the
values of these fields to determine the specific part you have received.
2.2 Format
Part numbers for this device have the following format:
MC 9 S08 PA AA (V) B CC
2.3 Fields
This table lists the possible values for each field in the part number (not all combinations
are valid):
Field Description Values
MC Qualification status • MC = fully qualified, general market flow
9 Memory • 9 = flash based
S08 Core • S08 = 8-bit CPU
PA Device family • PA
AA Approximate flash size in KB • 16 = 16 KB
• 8 = 8 KB
(V) Mask set version • (blank) = Any version
• A = Rev. 2 or later version, this is
recommended for new design
Table continues on the next page...
1
2
Ordering parts
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
4 Freescale Semiconductor, Inc.
Field Description Values
B Operating temperature range (°C) • V = –40 to 105
CC Package designator • LD = 44-LQFP
• LC = 32-LQFP
• TJ = 20-TSSOP
• WJ = 20-SOIC
• TG = 16-TSSOP
2.4 Example
This is an example part number:
MC9S08PA16VLD
3Parameter Classification
The electrical parameters shown in this supplement are guaranteed by various methods.
To give the customer a better understanding, the following classification is used and the
parameters are tagged accordingly in the tables where appropriate:
Table 1. Parameter Classifications
P Those parameters are guaranteed during production testing on each individual device.
C Those parameters are achieved by the design characterization by measuring a statistically relevant sample size
across process variations.
T Those parameters are achieved by design characterization on a small sample size from typical devices under
typical conditions unless otherwise noted. All values shown in the typical column are within this category.
D Those parameters are derived mainly from simulations.
NOTE
The classification is shown in the column labeled “C” in the
parameter tables where appropriate.
Parameter Classification
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 5
Ratings
4.1 Thermal handling ratings
Symbol Description Min. Max. Unit Notes
TSTG Storage temperature –55 150 °C 1
TSDR Solder temperature, lead-free — 260 °C 2
1. Determined according to JEDEC Standard JESD22-A103, High Temperature Storage Life.
2. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.2 Moisture handling ratings
Symbol Description Min. Max. Unit Notes
MSL Moisture sensitivity level — 3 — 1
1. Determined according to IPC/JEDEC Standard J-STD-020, Moisture/Reflow Sensitivity Classification for Nonhermetic
Solid State Surface Mount Devices.
4.3 ESD handling ratings
Symbol Description Min. Max. Unit Notes
VHBM Electrostatic discharge voltage, human body model -6000 +6000 V 1
VCDM Electrostatic discharge voltage, charged-device model -500 +500 V 2
ILAT Latch-up current at ambient temperature of 105°C -100 +100 mA
1. Determined according to JEDEC Standard JESD22-A114, Electrostatic Discharge (ESD) Sensitivity Testing Human Body
Model (HBM).
2. Determined according to JEDEC Standard JESD22-C101, Field-Induced Charged-Device Model Test Method for
Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components.
4.4 Voltage and current operating ratings
Absolute maximum ratings are stress ratings only, and functional operation at the
maxima is not guaranteed. Stress beyond the limits specified in below table may affect
device reliability or cause permanent damage to the device. For functional operating
conditions, refer to the remaining tables in this document.
4
Ratings
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
6 Freescale Semiconductor, Inc.
This device contains circuitry protecting against damage due to high static voltage or
electrical fields; however, it is advised that normal precautions be taken to avoid
application of any voltages higher than maximum-rated voltages to this high-impedance
circuit. Reliability of operation is enhanced if unused inputs are tied to an appropriate
logic voltage level (for instance, either VSS or VDD) or the programmable pullup resistor
associated with the pin is enabled.
Symbol Description Min. Max. Unit
VDD Supply voltage –0.3 6.0 V
IDD Maximum current into VDD — 120 mA
VDIO Digital input voltage (except RESET, EXTAL, XTAL, or true
open drain pin PTA2 and PTA3)
–0.3 VDD + 0.3 V
Digital input voltage (true open drain pin PTA2 and PTA3) -0.3 6 V
VAIO Analog1, RESET, EXTAL, and XTAL input voltage –0.3 VDD + 0.3 V
IDInstantaneous maximum current single pin limit (applies to all
port pins)
–25 25 mA
VDDA Analog supply voltage VDD – 0.3 VDD + 0.3 V
1. All digital I/O pins, except open-drain pin PTA2 and PTA3, are internally clamped to VSS and VDD. PTA2 and PTA3 is only
clamped to VSS.
General
Nonswitching electrical specifications
5.1.1 DC characteristics
This section includes information about power supply requirements and I/O pin
characteristics.
Table 2. DC characteristics
Symbol C Descriptions Min Typical1Max Unit
— — Operating voltage — 2.7 — 5.5 V
VOH C Output high
voltage
All I/O pins, standard-
drive strength
5 V, Iload =
-5 mA
VDD - 0.8 — — V
C 3 V, Iload =
-2.5 mA
VDD - 0.8 — — V
C High current drive
pins, high-drive
strength2
5 V, Iload =
-20 mA
VDD - 0.8 — — V
C 3 V, Iload =
-10 mA
VDD - 0.8 — — V
Table continues on the next page...
5
5.1
General
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 7
Table 2. DC characteristics (continued)
Symbol C Descriptions Min Typical1Max Unit
IOHT D Output high
current
Max total IOH for all
ports
5 V — — -100 mA
3 V — — -50
VOL C Output low
voltage
All I/O pins, standard-
drive strength
5 V, Iload = 5
mA
— — 0.8 V
C 3 V, Iload =
2.5 mA
— — 0.8 V
C High current drive
pins, high-drive
strength2
5 V, Iload
=20 mA
— — 0.8 V
C 3 V, Iload =
10 mA
— — 0.8 V
IOLT D Output low
current
Max total IOL for all
ports
5 V — — 100 mA
3 V — — 50
VIH P Input high
voltage
All digital inputs VDD>4.5V 0.70 × VDD — — V
C VDD>2.7V 0.75 × VDD — —
VIL P Input low
voltage
All digital inputs VDD>4.5V — — 0.30 × VDD V
C VDD>2.7V — — 0.35 × VDD
Vhys C Input
hysteresis
All digital inputs — 0.06 × VDD — — mV
|IIn| P Input leakage
current
All input only pins
(per pin)
VIN = VDD or
VSS
— 0.1 1 µA
|IOZ| P Hi-Z (off-
state) leakage
current
All input/output (per
pin)
VIN = VDD or
VSS
— 0.1 1 µA
|IOZTOT| C Total leakage
combined for
all inputs and
Hi-Z pins
All input only and I/O VIN = VDD or
VSS
— — 2 µA
RPU P Pullup
resistors
All digital inputs,
when enabled (all I/O
pins other than PTA2
and PTA3)
— 30.0 — 50.0 kΩ
RPU3P Pullup
resistors
PTA2 and PTA3 pin — 30.0 — 60.0 kΩ
IIC D DC injection
current4, 5, 6Single pin limit VIN < VSS,
VIN > VDD
-0.2 — 2 mA
Total MCU limit,
includes sum of all
stressed pins
-5 — 25
CIn C Input capacitance, all pins — — — 7 pF
VRAM C RAM retention voltage — 2.0 — — V
1. Typical values are measured at 25 °C. Characterized, not tested.
2. Only PTB4, PTB5, PTD0, PTD1 support ultra high current output.
3. The specified resistor value is the actual value internal to the device. The pullup value may appear higher when measured
externally on the pin.
4. All functional non-supply pins, except for , are internally clamped to VSS and VDD.
5. Input must be current-limited to the value specified. To determine the value of the required current-limiting resistor,
calculate resistance values for positive and negative clamp voltages, then use the large one.
Nonswitching electrical specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
8 Freescale Semiconductor, Inc.
6. Power supply must maintain regulation within operating VDD range during instantaneous and operating maximum current
conditions. If the positive injection current (VIn > VDD) is higher than IDD, the injection current may flow out of VDD and could
result in external power supply going out of regulation. Ensure that external VDD load will shunt current higher than
maximum injection current when the MCU is not consuming power, such as no system clock is present, or clock rate is
very low (which would reduce overall power consumption).
Table 3. LVD and POR Specification
Symbol C Description Min Typ Max Unit
VPOR D POR re-arm voltage1, 21.5 1.75 2.0 V
VLVDH C Falling low-voltage detect
threshold - high range (LVDV
= 1)3
4.2 4.3 4.4 V
VLVW1H C Falling low-
voltage
warning
threshold -
high range
Level 1 falling
(LVWV = 00)
4.3 4.4 4.5 V
VLVW2H C Level 2 falling
(LVWV = 01)
4.5 4.5 4.6 V
VLVW3H C Level 3 falling
(LVWV = 10)
4.6 4.6 4.7 V
VLVW4H C Level 4 falling
(LVWV = 11)
4.7 4.7 4.8 V
VHYSH C High range low-voltage
detect/warning hysteresis
— 100 — mV
VLVDL C Falling low-voltage detect
threshold - low range (LVDV =
0)
2.56 2.61 2.66 V
VLVDW1L C Falling low-
voltage
warning
threshold -
low range
Level 1 falling
(LVWV = 00)
2.62 2.7 2.78 V
VLVDW2L C Level 2 falling
(LVWV = 01)
2.72 2.8 2.88 V
VLVDW3L C Level 3 falling
(LVWV = 10)
2.82 2.9 2.98 V
VLVDW4L C Level 4 falling
(LVWV = 11)
2.92 3.0 3.08 V
VHYSDL C Low range low-voltage detect
hysteresis
— 40 — mV
VHYSWL C Low range low-voltage
warning hysteresis
— 80 — mV
VBG P Buffered bandgap output 41.14 1.16 1.18 V
1. Maximum is highest voltage that POR is guaranteed.
2. POR ramp time must be longer than 20us/V to get a stable startup.
3. Rising thresholds are falling threshold + hysteresis.
4. Voltage factory trimmed at VDD = 5.0 V, Temp = 25 °C
Nonswitching electrical specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 9
IOH(mA)
VDD-VOH(V)
Figure 1. Typical IOH Vs. VDD-VOH (standard drive strength) (VDD = 5 V)
IOH(mA)
VDD-VOH(V)
Figure 2. Typical IOH Vs. VDD-VOH (standard drive strength) (VDD = 3 V)
Nonswitching electrical specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
10 Freescale Semiconductor, Inc.
IOH(mA)
VDD-VOH(V)
Figure 3. Typical IOH Vs. VDD-VOH (high drive strength) (VDD = 5 V)
IOH(mA)
VDD-VOH(V)
Figure 4. Typical IOH Vs. VDD-VOH (high drive strength) (VDD = 3 V)
Nonswitching electrical specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 11
IOL(mA)
VOL(V)
Figure 5. Typical IOL Vs. VOL (standard drive strength) (VDD = 5 V)
IOL(mA)
VOL(V)
Figure 6. Typical IOL Vs. VOL (standard drive strength) (VDD = 3 V)
Nonswitching electrical specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
12 Freescale Semiconductor, Inc.
IOL(mA)
VOL(V)
Figure 7. Typical IOL Vs. VOL (high drive strength) (VDD = 5 V)
IOL(mA)
VOL(V)
Figure 8. Typical IOL Vs. VOL (high drive strength) (VDD = 3 V)
Nonswitching electrical specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 13
5.1.2 Supply current characteristics
This section includes information about power supply current in various operating modes.
Table 4. Supply current characteristics
Num C Parameter Symbol Bus Freq VDD (V) Typical1Max Unit Temp
1 C Run supply current FEI
mode, all modules on; run
from flash
RIDD 20 MHz 5 7.60 — mA -40 to 105 °C
C 10 MHz 4.65 —
1 MHz 1.90 —
C 20 MHz 3 7.05 —
C 10 MHz 4.40 —
1 MHz 1.85 —
2 C Run supply current FEI
mode, all modules off &
gated; run from flash
RIDD 20 MHz 5 5.88 — mA -40 to 105 °C
C 10 MHz 3.70 —
1 MHz 1.85 —
C 20 MHz 3 5.35 —
C 10 MHz 3.42 —
1 MHz 1.80 —
3 P Run supply current FBE
mode, all modules on; run
from RAM
RIDD 20 MHz 5 10.9 14.0 mA -40 to 105 °C
C 10 MHz 6.10 —
1 MHz 1.69 —
P 20 MHz 3 8.18 —
C 10 MHz 5.14 —
1 MHz 1.44 —
4 P Run supply current FBE
mode, all modules off &
gated; run from RAM
RIDD 20 MHz 5 8.50 13.0 mA -40 to 105 °C
C 10 MHz 5.07 —
1 MHz 1.59 —
P 20 MHz 3 6.11 —
C 10 MHz 4.10 —
1 MHz 1.34 —
5 P Wait mode current FEI
mode, all modules on
WIDD 20 MHz 5 5.95 — mA -40 to 105 °C
C 10 MHz 3.50 —
1 MHz 1.24 —
C 20 MHz 3 5.45 —
10 MHz 3.25 —
1 MHz 1.20 —
6 C Stop3 mode supply
current no clocks active
(except 1kHz LPO
clock)2, 3
S3IDD — 5 4.6 — µA -40 to 105 °C
C — 3 4.5 — -40 to 105 °C
7 C ADC adder to stop3 — — 5 40 — µA -40 to 105 °C
Table continues on the next page...
Nonswitching electrical specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
14 Freescale Semiconductor, Inc.
Table 4. Supply current characteristics (continued)
Num C Parameter Symbol Bus Freq VDD (V) Typical1Max Unit Temp
CADLPC = 1
ADLSMP = 1
ADCO = 1
MODE = 10B
ADICLK = 11B
3 39 —
8 C LVD adder to stop34— — 5 128 — µA -40 to 105 °C
C 3 124 —
1. Data in Typical column was characterized at 5.0 V, 25 °C or is typical recommended value.
2. RTC adder cause <1 µA IDD increase typically, RTC clock source is 1kHz LPO clock.
3. ACMP adder cause <10 µA IDD increase typically.
4. LVD is periodically woken up from stop3 by 5% duty cycle. The period is equal to or less than 2 ms.
5.1.3 EMC performance
Electromagnetic compatibility (EMC) performance is highly dependent on the
environment in which the MCU resides. Board design and layout, circuit topology
choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should
consult Freescale applications notes such as AN2321, AN1050, AN1263, AN2764, and
AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
5.1.3.1 EMC radiated emissions operating behaviors
Table 5. EMC radiated emissions operating behaviors for 44-pin LQFP
package
Symbol Description Frequency
band (MHz)
Typ. Unit Notes
VRE1 Radiated emissions voltage, band 1 0.15–50 8 dBμV 1, 2
VRE2 Radiated emissions voltage, band 2 50–150 8 dBμV
VRE3 Radiated emissions voltage, band 3 150–500 8 dBμV
VRE4 Radiated emissions voltage, band 4 500–1000 5 dBμV
VRE_IEC IEC level 0.15–1000 N — 2, 3
1. Determined according to IEC Standard 61967-1, Integrated Circuits - Measurement of Electromagnetic Emissions, 150
kHz to 1 GHz Part 1: General Conditions and Definitions and IEC Standard 61967-2, Integrated Circuits - Measurement of
Electromagnetic Emissions, 150 kHz to 1 GHz Part 2: Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method. Measurements were made while the microcontroller was running basic application code. The reported
emission level is the value of the maximum measured emission, rounded up to the next whole number, from among the
measured orientations in each frequency range.
2. VDD = 5.0 V, TA = 25 °C, fOSC = 10 MHz (crystal), fSYS = 20 MHz, fBUS = 20 MHz
3. Specified according to Annex D of IEC Standard 61967-2, Measurement of Radiated Emissions—TEM Cell and Wideband
TEM Cell Method
Nonswitching electrical specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 15
Switching specifications
5.2.1 Control timing
Table 6. Control timing
Num C Rating Symbol Min Typical1Max Unit
1 P Bus frequency (tcyc = 1/fBus) fBus DC — 20 MHz
2 C Internal low power oscillator frequency fLPO — 1.0 — KHz
3 D External reset pulse width2textrst 1.5 ×
tcyc
— — ns
4 D Reset low drive trstdrv 34 × tcyc — — ns
5 D BKGD/MS setup time after issuing background
debug force reset to enter user or BDM modes
tMSSU 500 — — ns
6 D BKGD/MS hold time after issuing background
debug force reset to enter user or BDM modes3tMSH 100 — — ns
7 D IRQ pulse width Asynchronous
path2tILIH 100 — — ns
D Synchronous path4tIHIL 1.5 × tcyc — — ns
8 D Keyboard interrupt pulse
width
Asynchronous
path2tILIH 100 — — ns
D Synchronous path tIHIL 1.5 × tcyc — — ns
9 C Port rise and fall time -
standard drive strength
(load = 50 pF)5
— tRise — 10.2 — ns
C tFall — 9.5 — ns
C Port rise and fall time -
high drive strength (load =
50 pF)5
— tRise — 5.4 — ns
C tFall — 4.6 — ns
1. Typical values are based on characterization data at VDD = 5.0 V, 25 °C unless otherwise stated.
2. This is the shortest pulse that is guaranteed to be recognized as a reset pin request.
3. To enter BDM mode following a POR, BKGD/MS must be held low during the powerup and for a hold time of tMSH after
VDD rises above VLVD.
4. This is the minimum pulse width that is guaranteed to pass through the pin synchronization circuitry. Shorter pulses may or
may not be recognized. In stop mode, the synchronizer is bypassed so shorter pulses can be recognized.
5. Timing is shown with respect to 20% VDD and 80% VDD levels. Temperature range -40 °C to 105 °C.
Figure 9. Reset timing
5.2
Switching specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
16 Freescale Semiconductor, Inc.
tIHIL
KBIPx
tILIH
IRQ/KBIPx
Figure 10. IRQ/KBIPx timing
5.2.2 Debug trace timing specifications
Table 7. Debug trace operating behaviors
Symbol Description Min. Max. Unit
tcyc Clock period Frequency dependent MHz
twl Low pulse width 2 — ns
twh High pulse width 2 — ns
trClock and data rise time — 3 ns
tfClock and data fall time — 3 ns
tsData setup 3 — ns
thData hold 2 — ns
TRACECLK
Tr
Twh
Tf
Tcyc
Twl
Figure 11. TRACE_CLKOUT specifications
Th
Ts Ts Th
TRACE_CLKOUT
TRACE_D[3:0]
Figure 12. Trace data specifications
Switching specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 17
5.2.3 FTM module timing
Synchronizer circuits determine the shortest input pulses that can be recognized or the
fastest clock that can be used as the optional external source to the timer counter. These
synchronizers operate from the current bus rate clock.
Table 8. FTM input timing
No. C Function Symbol Min Max Unit
1 D External clock
frequency
fTCLK 0 fBus/4 Hz
2 D External clock
period
tTCLK 4 — tcyc
3 D External clock
high time
tclkh 1.5 — tcyc
4 D External clock
low time
tclkl 1.5 — tcyc
5 D Input capture
pulse width
tICPW 1.5 — tcyc
tTCLK
tclkh
tclkl
TCLK
Figure 13. Timer external clock
tICPW
FTMCHn
tICPW
FTMCHn
Figure 14. Timer input capture pulse
Switching specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
18 Freescale Semiconductor, Inc.
Thermal specifications
5.3.1 Thermal characteristics
This section provides information about operating temperature range, power dissipation,
and package thermal resistance. Power dissipation on I/O pins is usually small compared
to the power dissipation in on-chip logic and voltage regulator circuits, and it is user-
determined rather than being controlled by the MCU design. To take PI/O into account in
power calculations, determine the difference between actual pin voltage and VSS or VDD
and multiply by the pin current for each I/O pin. Except in cases of unusually high pin
current (heavy loads), the difference between pin voltage and VSS or VDD will be very
small.
Table 9. Thermal characteristics
Rating Symbol Value Unit
Operating temperature range
(packaged)
TA1TL to TH -40 to 105 °C
Junction temperature range TJ-40 to 150 °C
Thermal resistance single-layer board
44-pin LQFP RθJA 76 °C/W
32-pin LQFP RθJA 88 °C/W
20-pin SOIC RθJA 82 °C/W
20-pin TSSOP RθJA 116 °C/W
16-pin TSSOP RθJA 130 °C/W
Thermal resistance four-layer board
44-pin LQFP RθJA 54 °C/W
32-pin LQFP RθJA 59 °C/W
20-pin SOIC RθJA 54 °C/W
20-pin TSSOP RθJA 76 °C/W
16-pin TSSOP RθJA 87 °C/W
1. Maximum TA can be exceeded only if the user ensures that TJ does not exceed the maximum. The simplest method to
determine TJ is: TJ = TA + RθJA x chip power dissipation.
6 Peripheral operating requirements and behaviors
5.3
Thermal specifications
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 19
6.1 External oscillator (XOSC) and ICS characteristics
Table 10. XOSC and ICS specifications (temperature range = -40 to 105 °C ambient)
Num C Characteristic Symbol Min Typical1Max Unit
1 C Oscillator
crystal or
resonator
Low range (RANGE = 0) flo 31.25 32.768 39.0625 kHz
C High range (RANGE = 1)
FEE or FBE mode2fhi 4 — 20 MHz
C High range (RANGE = 1),
high gain (HGO = 1),
FBELP mode
fhi 4 — 20 MHz
C High range (RANGE = 1),
low power (HGO = 0),
FBELP mode
fhi 4 — 20 MHz
2 D Load capacitors C1, C2 See Note3
3 D Feedback
resistor
Low Frequency, Low-Power
Mode4RF— — — MΩ
Low Frequency, High-Gain
Mode
— 10 — MΩ
High Frequency, Low-
Power Mode
— 1 — MΩ
High Frequency, High-Gain
Mode
— 1 — MΩ
4 D Series resistor -
Low Frequency
Low-Power Mode 4RS— — — kΩ
High-Gain Mode — 200 — kΩ
5 D Series resistor -
High Frequency
Low-Power Mode4RS— — — kΩ
D Series resistor -
High
Frequency,
High-Gain Mode
4 MHz — 0 — kΩ
D 8 MHz — 0 — kΩ
D 16 MHz — 0 — kΩ
6 C Crystal start-up
time Low range
= 32.768 kHz
crystal; High
range = 20 MHz
crystal5, 6
Low range, low power tCSTL — 1000 — ms
C Low range, high power — 800 — ms
C High range, low power tCSTH — 3 — ms
C High range, high power — 1.5 — ms
7 T Internal reference start-up time tIRST — 20 50 µs
8 D Square wave
input clock
frequency
FEE or FBE mode2fextal 0.03125 — 5 MHz
D FBELP mode 0 — 20 MHz
9 P Average internal reference frequency -
trimmed
fint_t — 31.25 — kHz
10 P DCO output frequency range - trimmed fdco_t 16 — 20 MHz
11 P Total deviation
of DCO output
from trimmed
frequency5
Over full voltage and
temperature range
Δfdco_t — — ±2.0 %fdco
C Over fixed voltage and
temperature range of 0 to
70 °C
±1.0
12 C FLL acquisition time5, 7tAcquire — — 2 ms
Table continues on the next page...
Peripheral operating requirements and behaviors
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
20 Freescale Semiconductor, Inc.
Table 10. XOSC and ICS specifications (temperature range = -40 to 105 °C ambient)
(continued)
Num C Characteristic Symbol Min Typical1Max Unit
13 C Long term jitter of DCO output clock
(averaged over 2 ms interval)8CJitter — 0.02 0.2 %fdco
1. Data in Typical column was characterized at 5.0 V, 25 °C or is typical recommended value.
2. When ICS is configured for FEE or FBE mode, input clock source must be divisible using RDIV to within the range of 31.25
kHz to 39.0625 kHz.
3. See crystal or resonator manufacturer's recommendation.
4. Load capacitors (C1,C2), feedback resistor (RF) and series resistor (RS) are incorporated internally when RANGE = HGO =
0.
5. This parameter is characterized and not tested on each device.
6. Proper PC board layout procedures must be followed to achieve specifications.
7. This specification applies to any time the FLL reference source or reference divider is changed, trim value changed, or
changing from FLL disabled (FBELP, FBILP) to FLL enabled (FEI, FEE, FBE, FBI). If a crystal/resonator is being used as
the reference, this specification assumes it is already running.
8. Jitter is the average deviation from the programmed frequency measured over the specified interval at maximum fBus.
Measurements are made with the device powered by filtered supplies and clocked by a stable external clock signal. Noise
injected into the FLL circuitry via VDD and VSS and variation in crystal oscillator frequency increase the CJitter percentage
for a given interval.
XOSC
EXTAL XTAL
Crystal or Resonator
R
S
C2
RF
C1
Figure 15. Typical crystal or resonator circuit
6.2 NVM specifications
This section provides details about program/erase times and program/erase endurance for
the flash and EEPROM memories.
Table 11. Flash characteristics
C Characteristic Symbol Min1Typical2Max3Unit4
D Supply voltage for program/erase -40 °C
to 105 °C
Vprog/erase 2.7 — 5.5 V
D Supply voltage for read operation VRead 2.7 — 5.5 V
Table continues on the next page...
Peripheral operating requirements and behaviors
MC9S08PA16 Series Data Sheet, Rev. 3, 06/2015
Freescale Semiconductor, Inc. 21
Table 11. Flash characteristics (continued)
C Characteristic Symbol Min1Typical2Max3Unit4
D NVM Bus frequency fNVMBUS 1 — 25 MHz
D NVM Operating frequency fNVMOP 0.8 1 1.05 MHz
D Erase Verify All Blocks tVFYALL — — 17338 tcyc
D Erase Verify Flash Block tRD1BLK — — 16913 tcyc
D Erase Verify EEPROM Block tRD1BLK — — 810 tcyc
D Erase Verify Flash Section tRD1SEC — — 484 tcyc
D Erase Verify EEPROM Section tDRD1SEC — — 555 tcyc
D Read Once tRDONCE — — 450 tcyc
D Program Flash (2 word) tPGM2 0.12 0.12 0.29 ms
D Program Flash (4 word) tPGM4 0.20 0.21 0.46 ms
D Program Once tPGMONCE 0.20 0.21 0.21 ms
D Program EEPROM (1 Byte) tDPGM1 0.10 0.10 0.27 ms
D Program EEPROM (2 Byte) tDPGM2 0.17 0.18 0.43 ms
D Program EEPROM (3 Byte) tDPGM3 0.25 0.26 0.60 ms
D Program EEPROM (4 Byte) tDPGM4 0.32 0.33 0.77 ms
D Erase All Blocks tERSALL 96.01 100.78 101.49 ms
D Erase Flash Block tERSBLK 95.98 100.75 101.44 ms
D Erase Flash Sector tERSPG 19.10 20.05 20.08 ms
D Erase EEPROM Sector tDERSPG 4.81 5.05 20.57 ms
D Unsecure Flash tUNSECU 96.01 100.78 101.48 ms
D Verify Backdoor Access Key tVFYKEY — — 464 tcyc
D Set User Margin Level tMLOADU — — 407 tcyc
C FLASH Program/erase endurance TL to
TH = -40 °C to 105 °C
n