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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FQD5N20L N-Channel QFET(R) MOSFET 200 V, 3.8 A, 1.2 Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. * 3.8 A, 200 V, RDS(on) = 1.2 (Max.) @ VGS = 10 V, ID = 1.9 A * Low Gate Charge (Typ. 4.8 nC) * Low Crss (Typ. 6.0 pF) * 100% Avalanche Tested * RoHS Compliant D D G S G D-PAK S Absolute Maximum Ratings Symbol VDSS ID TC = 25C unless otherwise noted. FQD5N20LTM 200 Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Unit V 3.8 A 2.4 A 15.2 A IDM Drain Current VGSS Gate-Source Voltage 20 V EAS Single Pulsed Avalanche Energy (Note 2) 60 mJ IAR Avalanche Current (Note 1) 3.8 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * (Note 1) 3.7 5.5 2.5 mJ V/ns W 37 0.29 -55 to +150 W W/C C 300 C dv/dt PD (Note 1) (Note 3) Power Dissipation (TC = 25C) TJ, TSTG TL - Pulsed - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter FQD5N20LTM Thermal Resistance, Junction to Case, Max. 3.4 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 2 Thermal Resistance, Junction to Ambient (*1 in Pad of 2-oz Copper), Max. (c)2010 Fairchild Semiconductor Corporation FQD5N20L Rev. C1 1 Unit oC/W 50 www.fairchildsemi.com FQD5N20L -- N-Channel QFET(R) MOSFET November 2013 Part Number Electrical Characteristics Symbol Package DPAK Top Mark FQD5N20L FQD5N20LTM Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units TC = 25C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 200 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.18 VDS = 200 V, VGS = 0 V -- -- 1 A VDS = 160 V, TC = 125C -- -- 10 A IDSS Zero Gate Voltage Drain Current IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 1.0 -- 2.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 1.9 A VGS = 5 V, ID = 1.9 A -- 0.94 0.98 1.2 1.25 gFS Forward Transconductance VDS = 30 V, ID = 1.9 A -- 3.35 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 250 325 pF -- 40 50 pF -- 6 8 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 100 V, ID = 4.5 A, RG = 25 (Note 4) VDS = 160 V, ID = 4.5 A, VGS = 5 V (Note 4) -- 9 25 ns -- 90 190 ns -- 15 40 ns -- 50 110 ns -- 4.8 6.2 nC -- 1.2 -- nC -- 2.4 -- nC A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 3.8 ISM -- -- 15.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 3.8 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 4.5 A, dIF / dt = 100 A/s -- 95 -- ns -- 0.3 -- C Notes: 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 6.2 mH, IAS = 3.8 A, VDD = 50 V, RG = 25 , starting TJ = 25C. 3. ISD 4.5 A, di/dt 300 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. (c)2010 Fairchild Semiconductor Corporation FQD5N20L Rev. C1 2 www.fairchildsemi.com FQD5N20L -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information ID, Drain Current [A] Top : Bottom : VGS 10 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V 1 10 ID , Drain Current [A] 1 10 0 10 150 0 10 25 -55 Notes : 1. VDS = 30V 2. 250s Pulse Test Notes : 1. 250s Pulse Test 2. TC = 25 -1 10 -1 -1 0 10 10 1 10 0 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 8 1 IDR , Reverse Drain Current [A] 10 RDS(ON) [ ], Drain-Source On-Resistance 6 VGS = 5V VGS = 10V 4 2 0 10 150 Note : TJ = 25 -1 0 0 2 4 6 8 10 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID, Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 300 VGS, Gate-Source Voltage [V] 400 Capacitance [pF] Notes : 1. VGS = 0V 2. 250s Pulse Test 25 Ciss 200 Notes : 1. VGS = 0 V 2. f = 1 MHz Coss 100 Crss 0 -1 10 VDS = 40V 8 VDS = 100V VDS = 160V 6 4 2 Note : ID = 4.5 A 0 0 10 0 1 10 Figure 5. Capacitance Characteristics (c)2010 Fairchild Semiconductor Corporation FQD5N20L Rev. C1 2 4 6 8 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQD5N20L -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 1.2 3.0 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 2.25 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 4 Operation in This Area is Limited by R DS(on) 3 1 100 s ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms DC 0 10 Notes : 2 1 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 N o te s : 1 . Z J C( t) = 3 .4 /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z J C( t) 0 .2 0 .1 0 .0 5 PDM 0 .0 2 10 -1 0 .0 1 10 -5 t1 s in g le p u ls e 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2010 Fairchild Semiconductor Corporation FQD5N20L Rev. C1 4 www.fairchildsemi.com FQD5N20L -- N-Channel QFET(R) MOSFET Typical Characteristics 200nF 12V FQD5N20L -- N-Channel QFET(R) MOSFET VGS Same Type as DUT 50K Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2000 Fairchild Semiconductor Corporation FQD5N20L Rev. C1 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2000 Fairchild Semiconductor Corporation FQD5N20L Rev. C1 6 www.fairchildsemi.com FQD5N20L -- N-Channel QFET(R) MOSFET DUT FQD5N20L -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 (c)2000 Fairchild Semiconductor Corporation FQD5N20L Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 (c)2000 Fairchild Semiconductor Corporation FQD5N20L Rev. 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Sync-LockTM F-PFSTM AccuPowerTM (R) FRFET(R) AX-CAP(R)* (R)* (R) SM BitSiCTM Global Power Resource PowerTrench GreenBridgeTM PowerXSTM Build it NowTM TinyBoost(R) Green FPSTM Programmable Active DroopTM CorePLUSTM TinyBuck(R) (R) Green FPSTM e-SeriesTM QFET CorePOWERTM TinyCalcTM QSTM GmaxTM CROSSVOLTTM TinyLogic(R) Quiet SeriesTM GTOTM CTLTM TINYOPTOTM RapidConfigureTM IntelliMAXTM Current Transfer LogicTM TinyPowerTM ISOPLANARTM DEUXPEED(R) TM TinyPWMTM Dual CoolTM Marking Small Speakers Sound Louder TinyWireTM EcoSPARK(R) Saving our world, 1mW/W/kW at a timeTM and BetterTM TranSiCTM EfficentMaxTM SignalWiseTM MegaBuckTM TriFault DetectTM ESBCTM SmartMaxTM MICROCOUPLERTM TRUECURRENT(R)* SMART STARTTM MicroFETTM (R) SerDesTM Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) STEALTHTM MillerDriveTM Fairchild Semiconductor(R) UHC(R) SuperFET(R) MotionMaxTM FACT Quiet SeriesTM (R) Ultra FRFETTM SuperSOTTM-3 mWSaver FACT(R) UniFETTM SuperSOTTM-6 OptoHiTTM FAST(R) VCXTM SuperSOTTM-8 OPTOLOGIC(R) FastvCoreTM VisualMaxTM OPTOPLANAR(R) SupreMOS(R) FETBenchTM VoltagePlusTM SyncFETTM FPSTM XSTM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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