VUI72-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = I FSM = 75 A I C25 = 58 A 600 A VCE(sat) = 1.85 V 3~ Rectifier Bridge + Brake Unit Part number VUI72-16NOXT Backside: isolated 6 11 12 5 NTC 1~ 7~ 9~ 2 4 10 Features / Advantages: Applications: Package: V1-A-Pack Soldering connections for PCB mounting Convenient package outline NTC 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130521c VUI72-16NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 V IR reverse current VF VR = 1600 V TVJ = 25C 40 A TVJ = 150C 1.5 mA TVJ = 25C 1.10 V 1.38 V 1.01 V 25 A IF = 75 A IF = 25 A IF = 75 A TVJ = 125C TC = 110C I DAV bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1.37 V T VJ = 150 C 75 A TVJ = 150 C 0.79 V d= for power loss calculation only Ptot typ. VR = 1600 V IF = forward voltage drop min. 7.7 m 1.1 K/W 0.3 K/W TC = 25C 110 W t = 10 ms; (50 Hz), sine TVJ = 45C 600 A t = 8,3 ms; (60 Hz), sine VR = 0 V 650 A t = 10 ms; (50 Hz), sine TVJ = 150 C 510 A A t = 8,3 ms; (60 Hz), sine VR = 0 V 550 t = 10 ms; (50 Hz), sine TVJ = 45C 1.80 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.76 kAs TVJ = 150 C 1.30 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C Data according to IEC 60747and per semiconductor unless otherwise specified 1.26 kAs 19 pF 20130521c VUI72-16NOXT Ratings Brake IGBT Symbol VCES Definition VGES Conditions min. max. 1200 Unit V max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TVJ = collector emitter voltage I C80 TC = 25C 58 A TC = 80 C 40 A 195 W 2.15 V Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 1.5 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V TC = 25C Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C = 35 A t d(on) turn-on delay time IC = 35 A; VGE = 15 V TVJ = 25C 1.85 TVJ = 125C 2.15 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area I CM typ. 25C 5.4 5.9 V 6.5 V 0.1 mA mA 0.1 500 inductive load TVJ = 125C VCE = 600 V; IC = 35 A VGE = 15 V; R G = 27 VGE = 15 V; R G = 27 110 nC 70 ns 40 ns 250 ns 100 ns 3.8 mJ 4.1 mJ TVJ = 125C VCEK = 1200 V SCSOA short circuit safe operating area t SC short circuit duration VCE = 900 V; VGE = 15 V I SC short circuit current R G = 27 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink nA TVJ = 125C 105 A 10 s A 140 0.65 K/W K/W 0.25 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 0 A TC = 80 C tbd A TVJ = 25C tbd V TVJ = 25C tbd mA TVJ = 125C tbd mA I F 80 VF forward voltage IF = A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = t rr reverse recovery time IF = R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 600 V A/s A TVJ = 125C V tbd tbd C tbd A tbd ns tbd K/W 0 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20130521c VUI72-16NOXT Package Ratings V1-A-Pack Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 100 Unit A -40 125 C -40 150 C 2.5 Nm Weight MD 37 mounting torque d Spp/App d Spb/Apb VISOL g 2 creepage distance on surface | striking distance through air terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA Date Code Location yywwA Part Number (Typ) Lot No.: 2D Data Matrix Ordering Standard Part Number VUI72-16NOXT Marking on Product VUI72-16NOXT Delivery Mode Box Quantity 10 Code No. 510748 7000 Temperature Sensor NTC 6000 Symbol Definition Conditions R 25 resistance TVJ = 25 B 25/50 temperature coefficient I R0 2.13 typ. 2.2 3560 Equivalent Circuits for Simulation V0 min. * on die level Rectifier Brake IGBT max. Unit 2.27 k K T VJ = 150 C 1000 0 threshold voltage 0.79 1.1 V R 0 max slope resistance * 6.5 40 m (c) 2013 IXYS all rights reserved 4000 R 3000 [ ] 2000 0 V 0 max IXYS reserves the right to change limits, conditions and dimensions. 5000 50 100 150 TC [C] Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20130521c VUI72-16NOXT Outlines V1-A-Pack 0,5 +0,2 15,8 1 4,6 1 5 1 O0,5 35 26 63 31,6 3,3 0,5 2 17 0,25 13 0,25 8,3 1 R2 50 0,2 38,6 14 0,3 14 0,3 7 0,3 7 0,3 4x45 5 4 3 2 5,5 10 9 8 7 6 15 23,5 0,1 R R 5,5 11 0,3 11 0,3 1 R1 25,75 0,15 0,5 51,5 0,3 6 11 12 5 NTC 1~ 7~ 9~ 2 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 4 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20130521c VUI72-16NOXT Rectifier 500 100 2000 50 Hz 0.8 x V RRM 80 1600 400 IF VR = 0 V 60 2 It TVJ = 45C IFSM 1200 TVJ = 45C 2 [A] [A s] [A] 40 TVJ = 150C 300 TVJ = 125C 150C 20 TVJ = 150C 800 400 TVJ = 25C 0 0.4 0.6 0.8 1.0 1.2 1.4 200 10-3 1.6 10-2 10-1 100 t [s] Fig. 1 Forward current vs. voltage drop per diode Fig. 2 Surge overload current vs. time per diode 24 Ptot 2 100 DC = 0.6 KW 0.8 KW 1 KW 2 KW 4 KW 8 KW 1 80 0.5 0.4 IF(AV)M 60 0.33 0.17 16 [W] 10 Fig. 3 I t vs. time per diode RthJA: DC = 1 0.5 0.4 0.33 0.17 0.08 32 1 t [ms] VF [V] [A] 8 0.08 40 20 0 0 0 4 8 12 16 20 24 28 32 0 25 50 75 100 125 150 0 175 25 50 TA [C] IdAVM [A] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 1.2 1.0 0.8 ZthJC Constants for ZthJC calculation: 0.6 [K/W] 0.4 0.2 0.0 1 10 100 1000 10000 i Rth (K/W) 1 0.0607 0.0004 2 0.1230 0.00256 3 0.2305 0.0045 4 0.4230 0.0242 5 0.2628 0.1800 ti (s) t [ms] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130521c VUI72-16NOXT Brake IGBT 70 70 70 13 V VGE = 15 V VGE = 15 V 17 V 19 V 11 V 60 60 50 50 50 IC 40 IC 40 40 60 TVJ = 25C 30 [A] 30 TVJ = 125C 20 [A] 30 9V 20 20 TVJ = 125C 10 TVJ = 125C 10 0 10 0 0 1 2 3 TVJ = 25C 0 0 1 2 3 4 5 5 6 7 8 VCE [V] VCE [V] Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 20 10 IC = 35 A VCE = 600 V 8 VGE E 10 11 12 13 Fig. 3 Typ. tranfer characteristics 6 Eon RG = 27 VCE = 600 V VGE = 15 V TVJ = 125C 15 9 VGE [V] Eoff 6 IC = 35 A VCE = 600 V VGE = 15 V TVJ = 125C 5 Eon E 10 [V] [mJ] [mJ] 4 Eoff 4 5 2 0 0 0 20 40 60 80 100 120 140 0 20 40 60 80 QG [nC] IC [A] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy versus collector current 3 20 40 60 80 RG [ ] Fig. 6 Typ. switching energy versus gate resistance 1 0.1 [K/W] 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 [s] Fig. 7 Typ. transient thermal impedance IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130521c