SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8240
Issue 2
Page 1 of 3
2N3799X
• Low Noise
• Hermetic TO-18 Metal package.
• Ideally suited for Low Level Amplifier.
Instrumentation Amplifiers and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage -60V
VCEO Collector – Emitter Voltage -50V
VEBO Emitter – Base Voltage -5V
IC Continuous Collector Current -50mA
PD Total Power Dissipation at TA = 25°C 360mW
Derate Above 25°C 2.06mW/°C
PD Total Power Dissipation at TC = 25°C 1.2W
Derate Above 25°C 6.86mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Min. Typ. Max. Units
RθJA Thermal Resistance, Junction To Ambient 486.11
°C/W
RθJC
Thermal Resistance, Junction To Case 145.83
°C/W
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N3799X
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8240
Issue 2
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = -10mA IB = 0 -50
V(BR)CBO Collector-Base
Breakdown Voltage IC = -10µA IE = 0 -60
V(BR)EBO Emitter-Base Breakdown
Voltage IE = -10µA IC = 0 -5
V
VCB = -50V IE = 0 -0.01
ICBO Collector Cut-Off Current
TA = 150°C -10
µA
IEBO Emitter Cut-Off Current VEB = -4V IC = 0 -20 nA
IC = -100µA IB = -10µA -0.2
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = -1.0mA IB = -100µA -0.25
IC = -100µA IB = -10µA -0.7
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = -1.0mA IB = -100µA -0.8
VBE(on) Base-Emitter On Voltage IC = -100µA VCE = -5V -0.7
V
IC = -1.0µA VCE = -5V 75
IC = -10µA VCE = -5V 225
IC = -100µA VCE = -5V 300
TA = -55°C 150
IC = -500µA VCE = -5V 300
IC = -1.0mA VCE = -5V 300
hFE
(1)
Forward-current transfer
ratio
IC = -10mA VCE = -5V 250
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
2N3799X
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 8240
Issue 2
Page 3 of 3
DYNAMIC CHARACTERISTICS
IC = -500µA VCE = -5V
f = 20MHz
30
IC = -1.0mA VCE = -5V
fT Transition Frequency
f = 100MHz
100 500
MHz
VCB = -5V IE = 0
Cobo Output Capacitance
f = 1.0MHz
4
VEB = -0.5V IC = 0
Cibo Input Capacitance
f = 1.0MHz
8
pF
hie Input Impedance 10 40 KΩ
hoe Output Admittance IC = -1.0mA VCE = -10V 5 60 µhmos
hre Voltage Feedback Ratio f = 1.0MHz 25 x 10-4
hfe Small Signal Current Gain 300 900
f=100Hz
BW=20Hz
2.5 4
VCE = -10V f=1.0KHz
IC = -100µA Spot:
Spot:Spot:
Spot:
BW=200Hz
0.8 1.5
RG = 3KΩ f=10KHz
Noise:
Noise:Noise:
Noise:
BW=2KHz
1.8 1.5
NF Noise Figure
f=1.0KHz
1.5 2.5
dB
MECHANICAL DATA
Dimensions in mm (inches)
TO
-
18 (TO
-
206
AA) METAL PACKAGE
Underside View
Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector
13
2
2.54 (0.100)
Nom.
0.48 (0.019)
0.41 (0.016)
dia.
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
5.33 (0.210)
4.32 (0.170)
12.7 (0.500)
min.
