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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FS8G - FS8M 8 A Standard Recovery Surface Mount Rectifiers Features Description * * * * * The FS8G to FS8M series offers breakthrough size and performance. It sinks 8 A DC forward current and provides up to 230 A surge current capability with only 0.37 A reverse lea kage current. All this ca pability is packed into a small, flat-lead, TO-277 package, optimized for space-constrained applications. Very High forward Surge Capability: IFSM = 230 A Low Leakage Current: 0.37 A at TA = 25C Very Low Profile: Typical Height of 1.1 mm Glass Passivated Junction Lead Free in Compliance with EU RoHS 2011/65/EU Directive * Green Molding Compound as per IEC61249 Standard * Qualified per AEC-Q101 REV. C standard * HBM (JEDEC A114) > 8 KV; CDM (JEDEC C101C) > 2KV 3 2 Applications 1 * General-Purpose Applications * Reverse Polarity Protection * Rectifications TO-277 3 Cathode Anode 1 Anode 2 Ordering Information Part Number Top Mark Package Packing Method FS8G FS8G TO-277 3L (No DAP Option) Tape and Reel FS8J FS8J TO-277 3L (No DAP Option) Tape and Reel FS8K FS8K TO-277 3L (No DAP Option) Tape and Reel FS8M FS8M TO-277 3L (No DAP Option) Tape and Reel (c) 2015 Fairchild Semiconductor Corporation FS8G - FS8M Rev. 1.1 www.fairchildsemi.com FS8G - FS8M -- 8 A Standard Recovery Surface Mount Rectifiers June 2017 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Parameter FS8G 400 FS8J 600 FS8K 800 FS8M 1000 VRRM Maximum Repetitive Peak Reverse Voltage VRMS Maximum RMS Reverse Voltage 280 420 560 700 VDC DC Blocking Voltage 400 600 800 1000 IF(AV) Maximum Average Rectified Forward Current TJ TSTG V V V 8 A 230 A Operating Junction Temperature Range -55 to +150 C Storage Temperature Range -55 to +150 C Peak Forward Surge Current: 8.3 ms Single Half Sine-Wave Superimposed on Rated Load IFSM Unit Thermal Characteristics(1) Values are at TA = 25C unless otherwise noted. Symbol RJA JL Minimum Maximum Land Pattern Land Pattern Parameter Junction-to-Ambient Thermal Resistance 100 40 Junction-to-Lead Thermal Characteristics, Thermocouple Soldered to Anode 20 12 Junction-to-Lead Thermal Characteristics, Thermocouple Soldered to Cathode 6 5 Unit C/W C/W Note: 1. The thermal resistances (RJA & JL) are characterized with device mounted on the following FR4 printed circuit boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm (big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2). Force line trace size = 55 mils, sense line trace size = 4 mils. F S F S F S F S F S Figure 1. Minimum Land Pattern of 2 oz Copper (c) 2015 Fairchild Semiconductor Corporation FS8G - FS8M Rev. 1.0 Figure 2. Maximum Land Pattern of 2 oz Copper www.fairchildsemi.com 2 FS8G - FS8M -- 8 A Standard Recovery Surface Mount Rectifiers Absolute Maximum Ratings Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. 1.1 IF = 8 A 0.951 IF = 8 A, TA = 125C 0.845 VR = VDC 0.37 Unit VF Forward Voltage IR DC Reverse Current Trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A 3.37 s CJ Junction Capacitance VR = 0 V, f = 1 MHz 118 pF (c) 2015 Fairchild Semiconductor Corporation FS8G - FS8M Rev. 1.0 VR = VDC, TA = 125C 84 5 V A www.fairchildsemi.com 3 FS8G - FS8M -- 8 A Standard Recovery Surface Mount Rectifiers Electrical Characteristics 1000 TL (Cathode, Min. Pad) Junction Capacitance, CJ [pF] Average Forward Current, IF [A] 9 8 7 6 5 4 TA (3cm x 3 cm Pad) 3 TA (Min. Pad) 2 100 1 0 0 25 50 75 100 125 150 o Ambient / Lead Temperature [ C] 10 0.1 175 1 10 100 Reverse Voltage, VR [V] Figure 3. Forward Current Derating Curve Figure 4. Typical Junction Capacitance 100 o TA=150 C 10 Forward Current, IF [A] Reverse Current, IR [A] 1000 o TA=125 C o 1 TA=75 C 0.1 TA=25 C o 0.01 o TA=-55 C 1E-3 0 10 o TA= 125 C Reverse Voltage, VR [V] o TA= 25 C o TA= 150 C o TA= -55 C 1 0.5 100 200 300 400 500 600 700 800 900 1000 o TA= 75 C 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Forward Voltage, VF [V] Figure 5. Typical Reverse Characteristics Figure 6. Typical Forward Characteristics Peak Forward Surge Current [A] 300 250 200 150 100 50 0 1 10 Number of Cycles 100 Figure 7. Maximum Non-repetitive Peak Forward Surge current (c) 2015 Fairchild Semiconductor Corporation FS8G - FS8M Rev. 1.0 www.fairchildsemi.com 4 FS8G - FS8M -- 8 A Standard Recovery Surface Mount Rectifiers Typical Performance Characteristics A 6.65 6.35 6.15 5.67 B 4.63 D 4.25 0.63 0.43 (2X) TOP VIEW SEATING PLANE 0.01 4.65 MIN 1.40 1.10 (2X) 1.45 MIN 4.15 MIN 0.40 0.23 1.97 1.15 MIN 1.00 2.75 LAND PATTERN RECOMMENDATION 1.20 1.00 FRONT VIEW (0.35) C D 4.90 4.23 1.25 0.90 2.20 2.00 4.15 2.25 D 3.25 1.95 NOTES: UNLESS OTHERWISE SPECIFIED A. PACKAGE REFERENCE: JEDEC TO-277 B. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. C. ALL DIMENSIONS ARE IN MILLIMETERS. D DOES NOT COMPLY TO JEDEC STANDARD VALUE. E. DRAWING FILENAME: MKT-TO277A03rev5 0.913 3.680 (0.25) BOTTOM VIEW 0.60 DAP OPTION 4.75 MAX BOTTOM VIEW - DAP OPTION ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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