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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
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FS8G - FS8M — 8 A Standard Recovery Surface Mount Rectifiers
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FS8G - FS8M Rev. 1.1
June 2017
1
3
TO-277
2
FS8G - FS8M
8 A Standard Recovery Surface Mount Rectifiers
Features
• Very High forward Surge Capability: IFSM = 230 A
• Low Leakage Current: 0.37 μA at TA = 25°C
• Very Low Profile: Typical Height of 1.1 mm
• Glass Passivated Junction
• Lead Free in Compliance
with EU RoHS 2011/65/EU Directive
• Green Molding Compound as per IEC61249 Standard
• Qualified per AEC-Q101 REV. C standard
• HBM (JEDEC A114) > 8 KV; CDM (JEDEC C101C) > 2KV
Applications
• General-Purpose Applications
• Reverse Polarity Protection
• Rectifications
Ordering Information
Part Number Top Mark Package Packing Method
FS8G FS8G TO-277 3L (No DAP Option) Tape and Reel
FS8J FS8J TO-277 3L (No DAP Option) Tape and Reel
FS8K FS8K TO-277 3L (No DAP Option) Tape and Reel
FS8M FS8M TO-277 3L (No DAP Option) Tape and Reel
Anode 2
Anode 1
3
Cathode
Description
The FS8G to FS8M series offers breakthrough size
and performance. It sinks 8 A DC forward current and
provides up to 230 A surge current capability with only
0.37 μA reverse leakage current. All this ca pability is
packed into a small, flat-lead, TO-277 package, opti-
mized for space-constrained applications.
FS8G - FS8M — 8 A Standard Recovery Surface Mount Rectifiers
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FS8G - FS8M Rev. 1.0 2
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Note:
1. The thermal resistances (RθJA & ψJL) are characterized with device mounted on the following FR4 printed circuit
boards, as shown in Figure 1 and Figure 2. PCB size: 76.2 x 114.3 mm. Minimum land pattern size: 4.9 x 4.8 mm
(big pattern, x1), 1.4 x 1.52 mm (small pattern, x2). Maximum land pattern size: 30 x 30 mm (pattern, x2).
Force line trace size = 55 mils, sense line trace size = 4 mils.
Symbol Parameter Value Unit
FS8G FS8J FS8K FS8M
VRRM Maximum Repetitive Peak Reverse Voltage 400 600 800 1000 V
VRMS Maximum RMS Reverse Voltage 280 420 560 700 V
VDC DC Blocking Voltage 400 600 800 1000 V
IF(AV) Maximum Average Rectified Forward Current 8 A
IFSM
Peak Forward Surge Current: 8.3 ms Single Half
Sine-Wave Superimposed on Rated Load 230 A
TJOperating Junction Temperature Range -55 to +150 °C
TSTG Storage Temperature Range -55 to +150 °C
Symbol Parameter Minimum
Land Pattern Maximum
Land Pattern Unit
RθJA Junction-to-Ambient Thermal Resistance 100 40 °C/W
ψJL
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Anode 20 12
°C/W
Junction-to-Lead Thermal Characteristics,
Thermocouple Soldered to Cathode 65
Figure 1. Minimum Land Pattern of 2 oz Copper Figure 2. Maximum Land Pattern of 2 oz Copper
F
S
F
S
F
S
F
S
F
S
FS8G - FS8M — 8 A Standard Recovery Surface Mount Rectifiers
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FS8G - FS8M Rev. 1.0 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
VFForward Voltage IF = 8 A 0.951 1.1 V
IF = 8 A, TA = 125°C 0.845
IRDC Reverse Current VR = VDC 0.37 5 μA
VR = VDC, TA = 125°C 84
Trr Reverse Recovery Time IF = 0.5 A, IR = 1 A, Irr = 0.25 A 3.37 μs
CJJunction Capacitance VR = 0 V, f = 1 MHz 118 pF
FS8G - FS8M — 8 A Standard Recovery Surface Mount Rectifiers
© 2015 Fairchild Semiconductor Corporation www.fairchildsemi.com
FS8G - FS8M Rev. 1.0 4
Typical Performance Characteristics
Figure 3. Forward Current Derating Curve Figure 4. Typical Junction Capacitance
Figure 5. Typical Reverse Characteristics Figure 6. Typical Forward Characteristics
Figure 7. Maximum Non-repetitive Peak Forward
Surge current
0 25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
9
TA (Min. Pad)
TA (3cm x 3 cm Pad)
Average Forward Current, IF [A]
A m bient / Lead Temperature [oC]
TL (Cathode, Min. Pad)
0.1 1 10 100
10
100
1000
Junction Capacitance, CJ [pF]
Reverse Voltage, VR [V ]
0 100 200 300 400 500 600 700 800 900 1000
1E-3
0.01
0.1
1
10
100
1000
TA=150oCTA=125oC
TA=75oC
TA=-55oC
TA=25oC
Reverse Current, IR [μA]
Reverse Voltage, VR [V]
1
10
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
TA= 25oC
TA= -55oC
TA= 150oC
TA= 125oC
TA= 75oC
Forward Voltage, VF [V]
Forward Current, IF [A]
1 10 100
0
50
100
150
200
250
300
Peak Forward Surge Current [A]
Number of Cycles
1.15 MIN
4.15 MIN
1.97
1.45 MIN
4.65 MIN
2.75
1.00
(0.35)
1.20
1.00
0.40
0.23
0.01
SEATING
PLANE
C
6.65
6.35
6.15
5.67
4.63
4.25
1.40
1.10
(2X)
0.63
0.43
(2X)
AB
2.25
1.95 4.15
3.25 2.20
2.00
1.25
0.90
D
4.90
4.23
(0.25)
3.680
0.913
4.75 MAX
0.60
DAP OPTION
NOTES: UNLESS OTHERWISE SPECIFIED
A. PACKAGE REFERENCE: JEDEC TO-277
B. DIMENSIONS ARE EXCLUSIVE OF
BURRS, MOLD FLASH, AND TIE BAR
EXTRUSIONS.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D
DOES NOT COMPLY TO JEDEC
STANDARD VALUE.
E. DRAWING FILENAME: MKT-TO277A03rev5
TOP VIEW
LAND PATTERN RECOMMENDATION
BOTTOM VIEW - DAP OPTION
FRONT VIEW
BOTTOM VIEW
D
D
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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